Dielectric, capacitor, electrical circuit, circuit board, apparatus, and energy storage device

Patent metadata

Field	Value
Publication number	US-2025079083-A1
Application number	US-202418949304-A
Country	US
Kind code	A1
Filing date	Nov 15, 2024
Priority date	May 20, 2022
Publication date	Mar 6, 2025
Grant date	—

Abstract

A dielectric has a composition represented by Bi2xMgyTizOk. The composition satisfies requirements x≥0.15, y≥0.40, z≥0.25, and x+y+z=1.0. In the composition, k is a value for maintaining electroneutrality.

First claim

What is claimed is:

1 . A dielectric having a composition represented by Bi 2X Mg y Ti z O k , wherein
the composition satisfies requirements x≥0.15, y≤0.40, z≥0.25, and x+y+z=1.0, and in the composition, k is a value for maintaining electroneutrality.

2 . The dielectric according to claim 1 , comprising crystalline Bi 2 Ti 2 O 7 .

3 . The dielectric according to claim 1 , comprising at least one selected from the group consisting of crystalline Bi 4 Ti 3 O 12 , crystalline γ—Bi 2 O 3 , and crystalline Bi(Mg 0.5 Ti 0.5 )O 3 .

4 . The dielectric according to claim 1 , comprising at least one selected from the group consisting of crystalline Bi 4 Ti 3 O 12 and crystalline γ—Bi 2 O 3 .

5 . The dielectric according to claim 1 , comprising crystalline γ—Bi 2 O 3 .

6 . The dielectric according to claim 1 , wherein
at an electric field strength of 0.5 MV/cm, the dielectric has a dielectric constant of more than 138 when the electric field strength is increased, and the dielectric has a dielectric constant of more than 100 when the electric field strength is decreased.

7 . The dielectric according to claim 1 , wherein
at an electric field strength of 0.7 MV/cm, the dielectric has a dielectric constant of more than 138 when the electric field strength is increased, and the dielectric has a dielectric constant of more than 57 when the electric field strength is decreased.

8 . The dielectric according to claim 1 , forming at least one film selected from the group consisting of a pulsed laser deposition film, a vacuum deposition film, a sputtering film, an atomic layer deposition film, a chemical vapor deposition film, and an anodic oxide film.

9 . The dielectric according to claim 1 , being for a capacitor.

10 . A capacitor comprising:
a first electrode, the dielectric according to claim 1 disposed on the first electrode; and a second electrode covering at least a portion of the dielectric.

11 . An electrical circuit comprising the capacitor according to claim 10 .

12 . A circuit board comprising the capacitor according to claim 10 .

13 . An apparatus comprising the capacitor according to claim 10 .

14 . An energy storage device comprising the capacitor according to claim 10 .

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Koshikawa Hiroyuki
• Takeuchi Hiroki
• Kikuchi Ryosuke

Classifications

• H01G4/1227

  based on alkaline earth titanates · CPC title

• H01G4/1218 Primary

  based on titanium oxides or titanates (H01G4/1245 takes precedence) · CPC title

• H01G9/032

  Inorganic semiconducting electrolytes, e.g. MnO2 · CPC title

• H01G4/085

  Vapour deposited · CPC title

• H01G4/33 Primary

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title