Optical semiconductor element and method of manufacturing optical semiconductor element

Patent metadata

Field	Value
Publication number	US-2025076591-A1
Application number	US-202418805963-A
Country	US
Kind code	A1
Filing date	Aug 15, 2024
Priority date	Sep 5, 2023
Publication date	Mar 6, 2025
Grant date	—

Abstract

An optical semiconductor element includes, a substrate having a silicon layer, and a semiconductor element made of a III-V compound semiconductor and bonded to the silicon layer. The silicon layer has a waveguide, a recess, a terrace, and a connecting portion. The recess is a recessed part lower than a surface of the waveguide, a surface of the terrace, and a surface of the connecting portion and is provided between the waveguide and the terrace. The semiconductor element is bonded on the waveguide, the recess, and the connecting portion and has a first tapered portion protruding in a direction in which the waveguide extends. The connecting portion crosses the recess and is connected to the waveguide and the terrace.

First claim

What is claimed is:

1 . An optical semiconductor element comprising:
a substrate having a silicon layer; and a semiconductor element made of a III-V compound semiconductor and bonded to the silicon layer, wherein the silicon layer has a waveguide, a recess, a terrace, and a connecting portion, wherein the recess is a recessed part lower than a surface of the waveguide, a surface of the terrace, and a surface of the connecting portion and is provided between the waveguide and the terrace, wherein the semiconductor element is bonded on the waveguide, the recess, and the connecting portion and has a first tapered portion protruding in a direction in which the waveguide extends, and wherein the connecting portion crosses the recess and is connected to the waveguide and the terrace.

2 . The optical semiconductor element according to claim 1 ,
wherein the connecting portion has a taper shape.

3 . The optical semiconductor element according to claim 1 ,
wherein, in the connecting portion, a part connected to the waveguide has a taper shape, and a part connected to the terrace extends in a direction differing from a direction in which the part having the taper shape extends, and wherein the first tapered portion of the semiconductor element is located above the part having the taper shape in the connecting portion.

4 . The optical semiconductor element according to claim 1 ,
wherein one surface and another surface of the connecting portion in the direction in which the waveguide extends each have a taper shape.

5 . The optical semiconductor element according to claim 1 ,
wherein the semiconductor element has a first semiconductor layer, a core layer, and a second semiconductor layer, wherein the first semiconductor layer, the core layer, and the second semiconductor layer are stacked in order from a position closer to the substrate, and wherein the first tapered portion includes the first semiconductor layer, the core layer, and the second semiconductor layer.

6 . The optical semiconductor element according to claim 1 ,
wherein the semiconductor element has a second tapered portion, and wherein the second tapered portion is located above the waveguide to be opposite to the substrate with respect to the first tapered portion in the direction in which the waveguide extends.

7 . The optical semiconductor element according to claim 6 ,
wherein the semiconductor element has a first semiconductor layer, a core layer, and a second semiconductor layer, wherein the first semiconductor layer, the core layer, and the second semiconductor layer are stacked in order from a position closer to the substrate, wherein the first tapered portion includes the first semiconductor layer, and wherein the second tapered portion includes the core layer and the second semiconductor layer.

8 . The optical semiconductor element according to claim 1 ,
wherein the semiconductor element has a third semiconductor layer, a core layer, and a fourth semiconductor layer, wherein the core layer is provided above the waveguide, and wherein the core layer is provided between the third semiconductor layer and the fourth semiconductor layer.

9 . A method of manufacturing an optical semiconductor element, the method comprising:
bonding a semiconductor element made of a III-V compound semiconductor to a silicon layer of a substrate; and forming a first tapered portion at the semiconductor element by wet-etching the semiconductor element, wherein the silicon layer has a waveguide, a recess, a terrace, and a connecting portion, wherein the recess is a recessed part lower than a surface of the waveguide, a surface of the terrace, and a surface of the connecting portion and is provided between the waveguide and the terrace, wherein the first tapered portion protrudes in a direction in which the waveguide extends, and wherein the connecting portion crosses the recess and is connected to the waveguide and the terrace.

Assignees

• Sumitomo Electric Industries

Inventors

• Tanaka Hajime

Classifications

• G02B2006/12176

  Etching · CPC title

• G02B2006/12061

  Silicon · CPC title

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

• G02B6/136 Primary

  by etching · CPC title

• G02B6/4202 Primary

  for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles · CPC title