Method for manufacturing member of capacitor, capacitor, electrical circuit, circuit board, apparatus, and power storage device

Patent metadata

Field	Value
Publication number	US-2025069817-A1
Application number	US-202418945152-A
Country	US
Kind code	A1
Filing date	Nov 12, 2024
Priority date	May 13, 2022
Publication date	Feb 27, 2025
Grant date	—

Abstract

A method for manufacturing a member of a capacitor according to the present disclosure includes forming a modified layer on a valve metal by a cathodic reaction, the modified layer including a metal other than the valve metal. In the manufacturing method, a requirement ε H /K H [V/nm]>ε L /K L [V/nm] is satisfied, where ε H is a dielectric constant of an oxide of the metal, K H [nm/V] is a thickness of a first oxide film of the metal, in formation of the first oxide film by anodic oxidation of the metal, per 1 V of anode potential, EL is a dielectric constant of an oxide of the valve metal, and K L [nm/V] is a 10 thickness of a second oxide film including the oxide of the valve metal, in formation of the second oxide film by anodic oxidation, per 1 V of anode potential.

First claim

What is claimed is:

1 . A method for manufacturing a member of a capacitor, the method comprising forming a modified layer on a valve metal by a cathodic reaction, the modified layer including a metal other than the valve metal, wherein
a requirement ε H /K H [V/nm]>ε L /K L [V/nm] is satisfied, where ε H is a dielectric constant of an oxide of the metal, K H [nm/V] is a thickness of a first oxide film of the metal, in formation of the first oxide film by anodic oxidation of the metal, per 1 V of anode potential, ε L is a dielectric constant of an oxide of the valve metal, and K L [nm/V] is a thickness of a second oxide film including the oxide of the valve metal, in formation of the second oxide film by anodic oxidation, per 1 V of anode potential.

2 . The method according to claim 1 , further comprising forming a first layer and a second layer by anodic oxidation of the valve metal and the modified layer, the first layer including the metal, the second layer including the oxide of the valve metal.

3 . The method according to claim 1 , wherein
the metal is cerium.

4 . A method for manufacturing a member of a capacitor, the method comprising:
forming a cerium-containing layer including cerium on a valve metal by a cathodic reaction of the valve metal in a cerium-containing solution; and forming a first layer and a second layer by anodic oxidation of the valve metal and the cerium-containing layer, the first layer including cerium, the second layer including a valve metal oxide, wherein in a thickness direction of the first layer, the second layer is disposed between the first layer and the valve metal and is in contact with the valve metal.

5 . The method according to claim 4 , wherein
the cerium-containing solution includes hydrogen peroxide.

6 . The method according to claim 5 , wherein
an electrolyte solution including an organic solvent is used for the anodic oxidation.

7 . A capacitor comprising:
a first electrode; a second electrode including a valve metal and having a cerium content of less than 0.1% in terms of number of atoms; and a dielectric disposed between the first electrode and the second electrode, wherein the dielectric includes: a first layer including cerium; and a second layer including a valve metal oxide and being, in a thickness direction of the first layer, disposed between the first layer and the second electrode and in contact with the second electrode.

8 . The capacitor according to claim 7 , wherein
the first layer further includes a valve metal oxide.

9 . The capacitor according to claim 7 , wherein
the valve metal included in the second electrode is aluminum.

10 . The capacitor according to claim 7 , wherein
the valve metal oxide included in the second layer is an aluminum oxide.

11 . The capacitor according to claim 7 , wherein
the first layer has a lower cerium concentration at a second position thereof than at a first position thereof, the second position being closer to the second layer than the first position is in the thickness direction of the first layer.

12 . The capacitor according to claim 7 , wherein
the first electrode forms at least a portion of a cathode, and the second electrode forms an anode.

13 . An electrical circuit comprising the capacitor according to claim 7 .

14 . A circuit board comprising the capacitor according to claim 7 .

15 . An apparatus comprising the capacitor according to claim 7 .

16 . A power storage device comprising the capacitor according to claim 7 .

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Kanou Manabu
• Kikuchi Ryosuke

Classifications

• H01G9/055

  Etched foil electrodes · CPC title

• H01G2/065

  for surface mounting, e.g. chip capacitors · CPC title

• H01G9/0036

  Formation of the solid electrolyte layer · CPC title

• H01G9/07

  Dielectric layers · CPC title

• H01G9/0032 Primary

  formation of the dielectric layer · CPC title