Optoelectric device and electronic device including the same

Patent metadata

Field	Value
Publication number	US-2025063840-A1
Application number	US-202418937962-A
Country	US
Kind code	A1
Filing date	Nov 5, 2024
Priority date	Jul 20, 2021
Publication date	Feb 20, 2025
Grant date	—

Abstract

Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

First claim

What is claimed is:

1 . An optoelectronic device comprising:
a first electrode; a second electrode spaced apart from the first electrode; an active layer provided between the first electrode and the second electrode, the active layer comprising a plurality of quantum dot layers having different energy bands, the active layer comprising a p-type first quantum dot layer and an n-type second quantum dot layer; an electron transport layer provided between the first electrode and the active layer; and a hole transport layer provided between the active layer and the second electrode; wherein a thickness of the electron transport layer and a thickness of the hole transport layer are determined such that a maximum external quantum efficiency of the optoelectronic device is obtained at a value that is higher than 35%.

2 . The optoelectronic device of claim 1 , wherein the plurality of quantum dot layers comprise a same quantum dot material.

3 . The optoelectronic device of claim 2 , wherein the plurality of quantum dot layers are doped with different dopants.

4 . The optoelectronic device of claim 2 , wherein one layer of the plurality of quantum dot layers is doped with a certain dopant, and other layers of the plurality of quantum dot layers are undoped.

5 . The optoelectronic device of claim 1 , wherein the plurality of quantum dot layers comprise different quantum dot materials.

6 . The optoelectronic device of claim 1 , wherein a thickness of the active layer ranges from 250 nm to 350 nm.

7 . The optoelectronic device of claim 6 , wherein a thickness of the electron transport layer and a thickness of the hole transport layer ranges from 10 nm to 100 nm.

8 . The optoelectronic device of claim 6 , wherein a thickness of the electron transport layer ranges from 20 nm to 60 nm, and a thickness of the hole transport layer ranges from 20 nm to 35 nm.

9 . The optoelectronic device of claim 1 , wherein the active layer further comprises:
a p-type fourth quantum dot layer provided between the p-type first quantum dot layer and the n-type second quantum dot layer, a doping concentration of the p-type fourth quantum dot layer being lower than a doping concentration of the p-type first quantum dot layer; and an n-type fifth quantum dot layer provided between the p-type fourth quantum dot layer and the n-type second quantum dot layer, a doping concentration of the n-type fifth quantum dot layer being lower than a doping concentration of the n-type second quantum dot layer.

10 . The optoelectronic device of claim 1 , wherein one of the first electrode and the second electrode comprises a transparent conductive material.

11 . The optoelectronic device of claim 1 , wherein one layer of the plurality of quantum dot layers is doped with a metal ion, a ligand material, or an inorganic ion passivation.

12 . The optoelectronic device of claim 1 , wherein a diameter of a quantum dot included in each of the plurality of quantum dot layers ranges from 1 nm to 10 nm.

13 . The optoelectronic device of claim 1 , wherein the active layer forms a photocarrier based on light of a visible, near-infrared or infrared wavelength band.

14 . The optoelectronic device of claim 1 , further comprising:
an electron injection layer provided between the first electrode and the electron transport layer; and a hole injection layer provided between the second electrode and the hole transport layer.

15 . An image sensor comprising:
a sensor array comprising a plurality of light-sensors respectively comprising an optoelectronic device, the optoelectronic device comprising:
a first electrode;
a second electrode spaced apart from the first electrode;
an active layer provided between the first electrode and the second electrode, the active layer comprising a plurality of quantum dot layers having different energy bands, the active layer comprising a p-type first quantum dot layer and an n-type second quantum dot layer;
an electron transport layer provided between the first electrode and the active layer; and a hole transport layer provided between the active layer and the second electrode; wherein a thickness of the electron transport layer and a thickness of the hole transport layer are determined such that a maximum external quantum efficiency of the optoelectronic device is obtained at a value that is higher than 35%; and a circuit comprising circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

16 . An electronic device comprising:
an imaging device configured to form an optical image by focusing light reflected from a subject; and an image sensor configured to convert the optical image formed by the imaging device into an electrical signal, the image sensor comprising:
a sensor array comprising a plurality of light-sensors respectively comprising an optoelectronic device, the optoelectronic device comprising:
a first electrode;
a second electrode spaced apart from the first electrode;
an active layer provided between the first electrode and the second electrode, the active layer comprising a plurality of quantum dot layers having different energy bands, the active layer comprising a p-type first quantum dot layer and an n-type second quantum dot layer;

an electron transport layer provided between the first electrode and the active layer; and a hole transport layer provided between the active layer and the second electrode; wherein a thickness of the electron transport layer and a thickness of the hole transport layer are determined such that a maximum external quantum efficiency of the optoelectronic device is obtained at a value that is higher than 35%; and
a circuit comprising circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

17 . The electronic device of claim 16 , wherein the electronic device comprises a smart phone, a mobile phone, a personal digital assistant (PDA), a laptop, a personal computer (PC), a home appliance, a security camera, a medical camera, a vehicle, an Internet of Things (IoT) device, a virtual reality device, or an augmented reality device.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Kyungsang
• Kim Hojung
• Baik Chanwook
• Yang Yooseong

Classifications

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F39/8033

  Photosensitive area · CPC title

• H04N23/57

  Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices · CPC title