Rf switch

Patent metadata

Field	Value
Publication number	US-2025063769-A1
Application number	US-202418804598-A
Country	US
Kind code	A1
Filing date	Aug 14, 2024
Priority date	Aug 17, 2023
Publication date	Feb 20, 2025
Grant date	—

Abstract

A transistor suited for use as an RF switch includes a semiconductor layer and a stack of a gate insulator layer and a conductive gate layer. A length of the conductive gate layer is smaller on the side of a lower surface, located in the vicinity of the gate insulator layer, and is greater on the side of an upper surface, opposite to the lower surface. Lateral sides of the conductive gate layer are covered, on a lower portion, with a first material and, on an upper portion, with a second material. The first material has a Young's modulus greater than a Young's modulus of the second material.

First claim

1 . A transistor, comprising:
a semiconductor layer; a stack comprising a gate insulator layer and a conductive gate over the semiconductor layer; wherein a length of the conductive gate is smaller on a side of a lower surface of the conductive gate, located in a vicinity of the gate insulator layer, and is greater on a side of an upper surface of the conductive gate, said upper surface being opposite to the lower surface; and a spacer structure adjacent lateral sides of the conductive gate, said spacer structure comprising a first material at a lower portion of the conductive gate where the length of the conductive gate is smaller, and a second material at an upper portion of the conductive gate where the length of the conductive gate is greater; wherein the first material has a Young's modulus greater than a Young's modulus of the second material.

2 . The transistor according to claim 1 , wherein the Young's modulus of the first material is greater than 200 GPa.

3 . The transistor according to claim 1 , wherein the Young's modulus of the second material is smaller than 100 GPa.

4 . The transistor according to claim 1 , wherein the first material has a dielectric constant greater than a dielectric constant of the second material.

5 . The transistor according to claim 4 , wherein the dielectric constant of the first material is greater than 7.

6 . The transistor according to claim 4 , wherein the dielectric constant of the second material is smaller than 4.

7 . The transistor according to claim 1 , wherein the conductive gate comprises a notch extending across its entire width at the side of the lower surface.

8 . The transistor according to claim 7 , wherein a difference between a length of the conductive gate at the side of the lower surface and a length of the conductive gate at the side of the upper surface on the upper surface is in a range from 5 nm to 40 nm.

9 . The transistor according to claim 7 , wherein the first material of the spacer fills the notch.

10 . The transistor according to claim 1 , wherein the first material is based on a material selected from the group consisting of: a nitride, a carbide, or diamond.

11 . The transistor according to claim 1 , wherein the second material is based on a material selected from the group consisting of: tetraethyl-orthosilicate, phosphosilicate glass, or silicoboron carbonitride.

12 . The transistor of according to claim 1 , wherein the conductive gate comprises a first portion defined by the length smaller on the side of the lower surface made of a first gate material and a second portion defined by the length greater on the side of the upper surface made of a second gate material, wherein the second gate material is different from the first gate material.

13 . The transistor of according to claim 12 , wherein the first gate material is made of polysilicon and the second gate material is made of germanium-doped polysilicon.

14 . The transistor according to claim 12 , wherein a thickness of the first portion of the conductive gate is equal to a thickness of a portion of the spacer structure made of the first material.

15 . The transistor according to claim 14 , wherein a thickness of the second portion of the conductive gate is greater than a thickness of a portion of the spacer structure made of the second material.

16 . The transistor according to claim 12 , wherein a thickness of the first portion of the conductive gate is less than a thickness of a portion of the spacer structure made of the first material.

17 . The transistor according to claim 16 , wherein a thickness of the second portion of the conductive gate is greater than a thickness of a portion of the spacer structure made of the second material.

18 . The transistor according to claim 1 , further comprising an insulating liner extending along a side surface of the conductive gate and on an upper surface of the gate insulator layer in a notch region where the length of the conductive gate is smaller on the side of the lower surface of the conductive gate.

19 . The transistor according to claim 1 , wherein said length of the conductive gate being smaller on the side of the lower surface of the conductive gate, and greater on the side of the upper surface of the conductive gate forms a notch, and wherein a separation between the first material and the second material is located at a level of an upper wall of the notch in the conductive gate.

20 . The transistor according to claim 19 , wherein the notch in the conductive gate extends across its the entire width of the conductive gate at the side of the lower surface.

21 . The transistor according to claim 19 , wherein the first material is located only in the notch formed in the conductive gate layer.

22 . A radio frequency switch, comprising a transistor according to claim 1 .

Assignees

• St Microelectronics Int Nv

Inventors

• Dhar Siddhartha
• Monfray Stephane

Classifications

• H10D64/518 Primary

  characterised by their lengths or sectional shapes · CPC title

• H10D64/671

  the conductor having lateral variation in doping or structure · CPC title

• H10D30/6744

  Monocrystalline silicon · CPC title

• H10D30/792 Primary

  comprising applied insulating layers, e.g. stress liners · CPC title

• H10D30/601

  having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  (lightly doped source or drain extensions for TFTs H10D30/6715) · CPC title