Thin film lithium niobate hybrid photonics packaging

Patent metadata

Field	Value
Publication number	US-2025060530-A1
Application number	US-202418935166-A
Country	US
Kind code	A1
Filing date	Nov 1, 2024
Priority date	Jun 13, 2022
Publication date	Feb 20, 2025
Grant date	—

Abstract

A hybrid photonics device package is described. The hybrid photonics device package includes an electro-optic integrated circuit and a photonics integrated circuit. The electro-optic integrated circuit includes an optical structure and an electrode on a first substrate. The optical structure has a thin film electro-optic layer including lithium. The photonics integrated circuit includes a second substrate and a photonics component on the second substrate. The photonics component and the optical structure are optically coupled. One of the electro-optic integrated circuit and the photonics integrated circuit is mounted on an other of the electro-optic integrated circuit and the photonics integrated circuit.

First claim

What is claimed is:

1 . A hybrid photonics device package, comprising:
an electro-optic integrated circuit including an optical structure and an electrode on a first substrate, the optical structure having a thin film electro-optic layer including lithium; and a photonics integrated circuit including a second substrate and a photonics component on the second substrate, the photonics integrated circuit having a depression therein, the depression being configured to receive at least a portion of the electro-optic integrated circuit; wherein the photonics component and the optical structure are optically coupled and wherein one of the electro-optic integrated circuit and the photonics integrated circuit is flip-chip mounted on an other of the electro-optic integrated circuit and the photonics integrated circuit such that the at least the portion of the electro-optic integrated circuit is aligned with the depression and such that the first substrate is farther from the second substrate of the photonics integrated circuit than the optical structure is.

2 . The hybrid photonics device package of claim 1 , wherein the photonics integrated circuit is flip-chip mounted on the electro-optic integrated circuit.

3 . The hybrid photonics device package of claim 1 , wherein the electro-optic integrated circuit is flip-chip mounted on the photonics integrated circuit.

4 . The hybrid photonics device package of claim 1 , wherein at least a portion of the depression is empty such that a region of the depression adjacent to the electro-optic integrated circuit is free of a filler.

5 . The hybrid photonics device package of claim 1 , wherein the first substrate includes a first silicon substrate and a first oxide layer on the first silicon substrate, the second substrate includes a second silicon substrate and a second oxide layer on the second silicon substrate, the first oxide layer having a first oxide thickness of at least three micrometers, the second oxide layer having a second oxide thickness of less than two micrometers.

6 . The hybrid photonics device package of claim 1 , wherein the first substrate includes a first silicon substrate and a first oxide layer on the first silicon substrate, the second substrate includes a second silicon substrate and a second oxide layer on the second silicon substrate, the first oxide layer having a first oxide thickness of at least three micrometers, the second oxide layer having a second oxide thickness of less than two micrometers.

7 . The hybrid photonics device package of claim 1 , wherein the photonics component includes a plurality of lasers and wherein the optical structure includes a plurality of waveguides optically coupled to the plurality of lasers.

8 . The hybrid photonics device package of claim 7 , wherein the photonics component further includes a plurality of optical detectors.

9 . The hybrid photonics device package of claim 1 , wherein the photonics integrated circuit is optimized for the photonics component and wherein the electro-optic integrated circuit is optimized for the optical structure and the electrode.

10 . The hybrid photonics device package of claim 1 , wherein the depression extends into the second substrate.

11 . A hybrid photonics device package, comprising:
an electro-optic integrated circuit including a thin film electro-optic layer including lithium and an electrode on a first substrate, the thin film electro-optic layer having a ridge waveguide and a slab portion formed therein, the first substrate including a first oxide layer having a thickness of at least five micrometers on a first underlying substrate; and a silicon photonics integrated circuit including a second substrate and at least one silicon photonics component on the second substrate, the at least one silicon photonics component including at least one of a III-V laser array and a photodetector array, the second substrate including a second oxide layer having a thickness of less than five micrometers on a silicon substrate, the silicon photonics integrated circuit having a depression therein, the depression being configured to receive at least a portion of the electro-optic integrated circuit; wherein the at least one silicon photonics component and the ridge waveguide are optically coupled and wherein one of the electro-optic integrated circuit and the silicon photonics integrated circuit is flip-chip mounted on an other of the electro-optic integrated circuit and the silicon photonics integrated circuit such that the at least the portion of the electro-optic integrated circuit is aligned with the depression and such that the first substrate is farther from the second substrate of the silicon photonics integrated circuit than the ridge waveguide is.

12 . A method for providing a hybrid photonics device package, comprising:
packaging an electro-optic integrated circuit with a photonics integrated circuit, the electro-optic integrated circuit including an optical structure and an electrode on a first substrate, the optical structure having a thin film electro-optic layer including lithium, the photonics integrated circuit including a second substrate and a photonics component on the second substrate, the photonics component being optically coupled with the optical structure, the photonics integrated circuit having a depression therein, the depression being configured to receive at least a portion of the electro-optic integrated circuit; and wherein the packaging further includes flip-chip mounting one of the electro-optic integrated circuit and the photonics integrated circuit on an other of the electro-optic integrated circuit and the photonics integrated circuit such that the at least the portion of the electro-optic integrated circuit is aligned with the depression and such that the first substrate is farther from the second substrate of the photonics integrated circuit than the optical structure is.

13 . The method of claim 12 , wherein the mounting further includes:
flip-chip mounting the photonics integrated circuit such that the at least the portion of the electro-optic integrated circuit is aligned with the depression.

14 . The method of claim 12 , wherein the mounting further includes:
flip-chip mounting the electro-optic integrated circuit such that the at least the portion of the electro-optic integrated circuit is aligned with the depression.

15 . The method of claim 12 , wherein the first substrate includes a first silicon substrate and a first oxide layer on the first silicon substrate, the second substrate includes a second silicon substrate and a second oxide layer on the second silicon substrate, the first oxide layer having a first oxide thickness of at least three micrometers, the second oxide layer having a second oxide thickness of less than two micrometers.

16 . The method of claim 12 , wherein the photonics component includes a plurality of lasers and wherein the optical structure includes a plurality of waveguides optically coupled to the plurality of lasers.

17 . The method of claim 12 , wherein the photonics integrated circuit is optimized for the photonics component and wherein the electro-optic integrated circuit is optimized for the optical structure and the electrode.

18 . The method of claim 12 , wherein the depression extends into the second substrate.

Assignees

• Hyperlight Corp

Inventors

• Zhang Mian
• Meade Roy
• Reimer Christian

Classifications

• G02B2006/12121

  Laser · CPC title

• G02B2006/12097

  Ridge, rib or the like · CPC title

• G02B2006/12061

  Silicon · CPC title

• G02B2006/1204

  Lithium niobate (LiNbO3) · CPC title

• G02F1/0151

  modulating the refractive index · CPC title