Semiconductor device and a method of operating the same

Patent metadata

Field	Value
Publication number	US-2025057049-A1
Application number	US-202418928893-A
Country	US
Kind code	A1
Filing date	Oct 28, 2024
Priority date	Oct 16, 2020
Publication date	Feb 13, 2025
Grant date	—

Abstract

A semiconductor device includes a conductive pattern extending in a first direction, a magnetic tunnel junction pattern on the conductive pattern, and a capacitor on the magnetic tunnel junction pattern. The magnetic tunnel junction pattern is between the conductive pattern and the capacitor, and the magnetic tunnel junction pattern connects to the capacitor, and the conductive pattern is configured to apply spin-orbit torque to the magnetic tunnel junction pattern.

First claim

What is claimed is:

1 . A method of operating a semiconductor device comprising a capacitor and a switching element connected to the capacitor, wherein the switching element comprises a magnetic tunnel junction pattern, the method comprising:
providing a first switching current to a conductive pattern adjacent to the magnetic tunnel junction pattern, the first switching current putting the magnetic tunnel junction pattern in a low resistance state; enabling performance of a first write operation for storing data in the capacitor, in response to the magnetic tunnel junction pattern being in the low resistance state; and providing a first reverse switching current to the conductive pattern to put the magnetic tunnel junction pattern in a high resistance state, wherein the first switching current and the first reverse switching current are in-plane currents in the conductive pattern.

2 . The method of claim 1 , further comprising:
providing a second reverse switching current to the conductive pattern to put the magnetic tunnel junction pattern in a first resistance state; and enabling performance of a second write operation for storing data in the capacitor, in response to the magnetic tunnel junction pattern being in the first resistance state, wherein the second reverse switching current is an in-plane current in the conductive pattern, and a direction of the second reverse switching current is the same as a direction of the first reverse switching current, and the first resistance is greater than the low resistance and is less than the high resistance.

3 . The method of claim 2 , further comprising:
providing a second switching current to the conductive pattern to put the magnetic tunnel junction pattern in a second resistance state; and enabling performance of a third write operation for storing data in the capacitor, in response to the magnetic tunnel junction pattern being in the second resistance state, wherein the second switching current is an in-plane current in the conductive pattern, and a direction of the second switching current is the same as a direction of the first switching current, and the second resistance is greater than the low resistance and less than the first resistance.

4 . The method of claim 1 , further comprising:
enabling performance of a read operation for reading data stored in the capacitor, in response to the magnetic tunnel junction pattern being in the low resistance state, wherein the performing of the read operation comprises providing a read current to the conductive pattern, and the read current is an in-plane current in the conductive pattern.

5 . The method of claim 1 , wherein the first write operation comprises:
applying a write voltage to an upper conductive line connected to the conductive pattern; and applying a ground voltage to the capacitor.

6 . The method of claim 5 , wherein the write voltage is greater than the ground voltage, and charges are charged into the capacitor through the conductive pattern and the magnetic tunnel junction pattern.

7 . The method of claim 5 , wherein the write voltage is less than the ground voltage, and charges the capacitor are discharges through the conductive pattern and the magnetic tunnel junction pattern.

8 . The method of claim 1 , wherein the conductive pattern is configured to apply a spin-orbit torque to the magnetic tunnel junction pattern.

9 . A method of operating a semiconductor device comprising a capacitor and a switching element connected to the capacitor, wherein the switching element comprises a magnetic tunnel junction pattern and a conductive pattern adjacent to the magnetic tunnel junction pattern, the magnetic tunnel junction pattern including a free magnetic pattern, a reference magnetic pattern and a tunnel barrier pattern interposed therebetween, the method comprising:
providing a first switching current to the conductive pattern, the first switching current being an in-plane current flowing in a first direction in the conductive pattern, switching a magnetization direction of the free magnetic pattern in parallel to a magnetization direction of the reference magnetic pattern by a spin-orbit torque generated be the first switching current; performing a write operation for storing data in the capacitor when the magnetic tunnel junction pattern is in a low resistance state; providing a first reverse switching current to the conductive pattern, the first reverse switching current being an in-plane current flowing in a second direction in the conductive pattern, the second direction being an opposite direction of the first direction; and switching the magnetization direction of the free magnetic pattern in anti-parallel to the magnetization direction of the reference magnetic pattern by a spin-orbit torque generated be the first reverse switching current.

10 . The method of claim 9 , wherein the write operation comprises:
applying a write voltage to an upper conductive line connected to the conductive pattern; and applying a ground voltage to the capacitor.

11 . The method of claim 10 , wherein the write voltage is greater than the ground voltage, and charges are charged into the capacitor through the conductive pattern and the magnetic tunnel junction pattern.

12 . The method of claim 10 , wherein the write voltage is less than the ground voltage, and charges the capacitor are discharges through the conductive pattern and the magnetic tunnel junction pattern.

13 . The method of claim 9 , further comprising:
performing a read operation for reading data stored in the capacitor when the magnetic tunnel junction pattern is in the low resistance state.

14 . The method of claim 13 , wherein the write operation comprises applying a write voltage to an upper conductive line connected to the conductive pattern, and applying a ground voltage to the capacitor, and
wherein the read operation comprises applying a read voltage to the conductive pattern, wherein the write voltage is VDD and the read voltage is VDD/ 2 .

15 . The method of claim 13 , wherein the first reverse switching current is provided to the conductive pattern after the write operation or the read operation is terminated.

16 . The method of claim 9 , wherein a state of the magnetic tunnel junction pattern is changed into the low resistance state by the spin-orbit torque generated be the first switching current.

17 . The method of claim 9 , wherein a state of the magnetic tunnel junction pattern is changed into a high resistance state by the spin-orbit torque generated be the first reverse switching current.

18 . A method of operating a semiconductor device comprising a capacitor and a switching element connected to the capacitor, wherein the switching element comprises a magnetic tunnel junction pattern and a conductive pattern adjacent to the magnetic tunnel junction pattern, the method comprising:
providing a first switching current to the conductive pattern to put the magnetic tunnel junction pattern in a low resistance state, the first switching current flowing in a first direction in the conductive pattern; performing a write operation for storing data in the capacitor or a read operation for reading data stored in the capacitor, when the magnetic tunnel junction pattern is in the low resistance state; and providing a first reverse switching current to the conductive pattern to put the magnetic tunnel junction pattern in a high resistance state, wherein the first reverse switching current flows in a second direction in the co

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jiho

Classifications

• H10D1/68

  Capacitors having no potential barriers · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H10N50/80 Primary

  Constructional details · CPC title

• H10B61/20

  comprising components having three or more electrodes, e.g. transistors · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title