Nanorod light-emitting device, method of manufacturing the same, and display apparatus including the same

Patent metadata

Field	Value
Publication number	US-2025056926-A1
Application number	US-202418788990-A
Country	US
Kind code	A1
Filing date	Jul 30, 2024
Priority date	Aug 7, 2023
Publication date	Feb 13, 2025
Grant date	—

Abstract

Provided is a nanorod light-emitting device including a support layer, a first-type semiconductor nanocore protruding from an upper surface of the support layer and including a semiconductor material doped as a first conductivity type, a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore, a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction, and a second-type semiconductor layer adjacent to a surface of the light-emitting layer and including a semiconductor material doped as a second conductivity type.

First claim

What is claimed is:

1 . A nanorod light-emitting device comprising:
a support layer; a first-type semiconductor nanocore protruding from an upper surface of the support layer and comprising a semiconductor material doped as a first conductivity type; a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore; a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction; and a second-type semiconductor layer adjacent to a surface of the light-emitting layer and comprising a semiconductor material doped as a second conductivity type.

2 . The nanorod light-emitting device of claim 1 , wherein the support layer and the first-type semiconductor nanocore are integrally formed.

3 . The nanorod light-emitting device of claim 1 , wherein a first end of the mask layer has a tapered shape.

4 . The nanorod light-emitting device of claim 1 , wherein the first height is greater than or equal to 5% of a height of the first-type semiconductor nanocore.

5 . The nanorod light-emitting device of claim 1 , further comprising an insulating layer extending from a lower surface of the mask layer to a second height of the first-type semiconductor nanocore in the vertical direction and adjacent to the mask layer and the light-emitting layer.

6 . The nanorod light-emitting device of claim 5 , wherein the second height is greater than the first height.

7 . The nanorod light-emitting device of claim 1 , wherein the first-type semiconductor nanocore comprises:
a first portion having a uniform cross-sectional area in a horizontal direction perpendicular to the vertical direction of the first-type semiconductor nanocore; and a second portion having a cross-sectional area in the horizontal direction decreasing in the vertical direction away from the support layer.

8 . The nanorod light-emitting device of claim 7 , wherein a region of the light-emitting layer and a region of the second-type semiconductor layer on the second portion is a light emission disabling region.

9 . The nanorod light-emitting device of claim 1 , further comprising a hard mask layer on top of the first-type semiconductor nanocore.

10 . The nanorod light-emitting device of claim 1 , further comprising a super lattice layer between the first-type semiconductor nanocore and the light-emitting layer.

11 . The nanorod light-emitting device of claim 1 , further comprising an electron blocking layer between the light-emitting layer and the second-type semiconductor layer.

12 . The nanorod light-emitting device of claim 1 , wherein the first-type semiconductor nanocore, the light-emitting layer, and the second-type semiconductor layer comprise a Group III-V nitride semiconductor material.

13 . The nanorod light-emitting device of claim 1 , wherein the nanorod light-emitting device is configured to emit red light and an internal quantum efficiency of the nanorod light-emitting device is greater than 20%.

14 . A display apparatus comprising:
a plurality of pixel electrodes; a common electrode corresponding to the plurality of pixel electrodes; and a plurality of nanorod light-emitting devices connected between each pixel electrode of the plurality of pixel electrodes and the common electrode, wherein each nanorod light-emitting device of the plurality of nanorod light-emitting devices comprises:
a support layer;
a first-type semiconductor nanocore protruding from an upper surface of the support layer and comprising a semiconductor material doped as a first conductivity type;
a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore;
a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction; and
a second-type semiconductor layer adjacent to a surface of the light-emitting layer and comprising a semiconductor material doped as a second conductivity type.

15 . A method of manufacturing a nanorod light-emitting device, the method comprising:
forming a first-type semiconductor nanocore protruding from a support layer in a first direction; forming a mask layer adjacent to lower sides of the first-type semiconductor nanocore; and growing a light-emitting structure layer from a surface of the first-type semiconductor nanocore in a direction different from the first direction.

16 . The method of claim 15 , wherein the forming of the first-type semiconductor nanocore comprises wet etching a semiconductor substrate.

17 . The method of claim 16 , further comprising, after forming a hard mask layer on the semiconductor substrate, patterning the semiconductor substrate and the hard mask layer together.

18 . The method of claim 15 , wherein the growing of the light-emitting structure layer comprises sequentially forming a super lattice layer, a light-emitting layer, an electron blocking layer, and a second-type semiconductor layer.

19 . The method of claim 18 , further comprising, after the growing of the light-emitting structure layer, disabling light emission of the light-emitting structure layer formed on a semi-polar surface on a top of the first-type semiconductor nanocore, among the light-emitting structure layer.

20 . The method of claim 15 , further comprising, after growing the light-emitting structure layer, forming an insulating layer adjacent to an end of the mask layer and the light-emitting structure layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Junhee
• Kim Joosung
• Shin Dongchul
• Park Junghun

Classifications

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• G09F9/33 Primary

  being semiconductor devices, e.g. diodes · CPC title

• H10H20/034

  of coatings · CPC title