Wide-band photodetectors using thermoelectric materials

Patent metadata

Field	Value
Publication number	US-2025052621-A1
Application number	US-202318366643-A
Country	US
Kind code	A1
Filing date	Aug 7, 2023
Priority date	Aug 7, 2023
Publication date	Feb 13, 2025
Grant date	—

Abstract

Visible and infrared radiation photothermoelectric effect photodetectors are provided. The photodetectors are formed on substrates having a low thermal diffusivity of less than 0.05 mm 2 /sec. A thermoelectric metal chalcogenide film is formed on the low thermal diffusivity substrate. At least two symmetric electrodes are formed on the thermoelectric metal chalcogenide film such that the thermoelectric metal chalcogenide film forms a channel between the electrodes. The photodetector has a responsivity of at least approximately 65 V W−1 for 1550 nm illumination and a response time less than approximately ˜60 ms. The photodetector photoresponse is tunable via manipulation of local illumination. Examples of photodetectors use Bi 2 Se 3 , Bi 2 Te 3 , and SnSe 2 on flexible polymeric substrates. By using large-area thermoelectric films with a photothermal detection mechanism, and modulating responsivity via thermal coupling, photodetector arrays for wearable electronics and integrated optoelectronic circuits may be created.

First claim

1 . A visible and infrared radiation photothermoelectric effect photodetector:
a substrate having a low thermal diffusivity of less than 0.05 mm 2 /sec; a thermoelectric metal chalcogenide film formed on the low thermal diffusivity substrate; at least two symmetric electrodes formed on the thermoelectric metal chalcogenide film such that the thermoelectric metal chalcogenide film forms a channel between the at least two symmetric electrodes; wherein the photodetector has a responsivity of at least approximately 65 V W−1 for 1550 nm illumination and a response time less than approximately ˜60 ms and wherein a photodetector photoresponse is tunable via manipulation of local illumination.

2 . The photodetector of claim 1 , wherein the thermoelectric metal chalcogenide film has a metal selected from one or more of bismuth, lead, thallium, tin, or antimony and a chalcogen selected from one or more of tellurium or selenium.

3 . The photodetector of claim 1 , wherein the thermoelectric metal chalcogenide film is Bi 2 Se 3 .

4 . The photodetector of claim 1 , wherein the thermoelectric metal chalcogenide film is Bi 2 Te 3 , SnTe 2 , SnSe 2 , Sb 2 Te 3 , Bi 0.5 Sb 1.5 Te 3 , or Ag 2 Se.

5 . The photodetector of claim 1 , wherein the at least two symmetric electrodes are metallic electrodes.

6 . The photodetector of claim 1 , wherein the low thermal diffusivity substrate is a polymer.

7 . The photodetector of claim 6 , wherein the polymer is polyimide, polycarbonate, polystyrene, polyethylene terephthalate, polyester, polyamide, nylon, or mixtures thereof.

8 . A method of making the visible and infrared radiation photothermoelectric effect photodetector of claim 1 , comprising:
providing a substrate having a low thermal diffusivity of less than 0.05 mm 2 /sec; forming a thermoelectric metal chalcogenide film on the low thermal diffusivity substrate:
depositing one or more chalcogen layers on the low thermal diffusivity substrate;
depositing one or more metal layers on the chalcogen layer;
performing a thermal anneal of the one or more chalcogen layers and the one or more metal layers to form the thermoelectric metal chalcogenide film;
forming at least two symmetric electrodes on the thermoelectric metal chalcogenide film such that the thermoelectric metal chalcogenide film forms a channel between the at least two symmetric electrodes.

9 . The method of claim 8 , wherein the thermoelectric metal chalcogenide film has a metal selected from one or more of bismuth, lead, thallium, or antimony and a chalcogen selected from one or more of tellurium or selenium.

10 . The method of claim 8 , wherein the thermoelectric metal chalcogenide film is Bi 2 Se 3 .

11 . The method of claim 8 , wherein the thermoelectric metal chalcogenide film is Bi 2 Te 3 .

12 . The method of claim 8 , wherein the at least two symmetric electrodes are metallic electrodes.

13 . The method of claim 8 , wherein the low thermal diffusivity substrate is a polymer.

14 . The method of claim 13 , wherein the polymer is polyimide, polycarbonate, polystyrene, polyethylene terephthalate, polyester, polyamide, nylon, or mixtures thereof.

15 . The method of claim 8 , wherein an annealing temperature is 200° C. or less.

16 . The method of claim 8 , wherein an annealing temperature is 150° C. or less.

17 . The method of claim 8 , wherein the anneal is a rapid thermal anneal.

Assignees

• Univ City Hong Kong

Inventors

• Ho Johnny Chung Yin
• Zhang Yuxuan
• Meng You

Classifications

• H10N10/852

  comprising tellurium, selenium or sulfur · CPC title

• G01J5/12 Primary

  using thermoelectric elements, e.g. thermocouples · CPC title

• H10N10/01

  Manufacture or treatment · CPC title

• G01J5/14 Primary

  Electrical features thereof · CPC title