Circuit breaker

Patent metadata

Field	Value
Publication number	US-2025047089-A1
Application number	US-202318836054-A
Country	US
Kind code	A1
Filing date	Feb 8, 2023
Priority date	Feb 8, 2022
Publication date	Feb 6, 2025
Grant date	—

Abstract

Some embodiments are directed towards an electric switching device including a first conductor path and a second conductor path, a first semiconductor circuit arrangement with a first—normally-off—semiconductor in the first conductor path, a first control and driver unit for driving the first semiconductor circuit arrangement and connected to the first conductor path and the second conductor path. It is suggested that the first semiconductor circuit arrangement can include a second semiconductor, that the second semiconductor is connected parallel to the first semiconductor, that the second semiconductor is a normally-on semiconductor, that the first semiconductor circuit arrangement includes a second control and driver unit configured to drive the second semiconductor with control signals. The second control and driver unit is connected parallel to the second semiconductor.

First claim

1 . An electric switching device, especially a hybrid switching device or a solid-state switching device, comprising:
a first conductor path arranged between a power source and a load, a first semiconductor circuit arrangement of the electric switching device arranged in the first conductor path, the first semiconductor circuit arrangement comprising:
at least a first semiconductor switch, wherein the first semiconductor switch is a normally-off semiconductor switch,
a first control and driver unit configured to drive the first semiconductor circuit arrangement with control signals, wherein the first control and driver unit is connected to an internal power supply, which is connected to the first conductor path,
at least a second semiconductor switch, wherein the second semiconductor switch is connected parallel to the first semiconductor switch, and wherein the second semiconductor switch is a normally-on semiconductor, and
a second control and driver unit configured to drive the second semiconductor switch with control signals when the internal power supply and control unit is not active or is incapable of supplying power to the first control and driver unit.

2 . An electric switching device according to claim 1 , wherein the second control and driver unit does not receive power from the control and power supply unit.

3 . An electric switching device according to claim 1 , wherein the second control and driver unit and the second semiconductor switch are configured such that when a voltage difference across the second control and driver unit and the second semiconductor switch exceeds a threshold voltage, the control and driver unit is activated and controls the second semiconductor switch to be turned off.

4 . An electric switching device according claim 1 , wherein the second control and driver unit is connected in parallel to the second semiconductor switch.

5 . An electric switching device according claim 1 , further comprising a second conductor path and a voltage-independent residual current device, the voltage-independent residual current device having at least one switchable mechanical contact along the first current path in series with the first semiconductor circuit arrangement, the voltage-independent residual current device being configured to break the circuit by opening the at least one mechanical contact in the event that it detects a residual current between the first conductor path and the second conductor path.

6 . An electric switching device according to claim 5 , wherein the voltage-independent residual current device is configured to send a signal to the second control and driver unit on detection of a residual current causing the second semiconductor switch to turn off. Preferably, the second control and driver unit is powered by the voltage-independent RCD. This is to say that the voltage generated the summation transformer and electronics circuit converting this summation current to voltage, is further used to active the control and driver unit after having been triggered opening mechanism for the contacts.

7 . An electric switching device according to claim 1 , wherein the first control and driver unit is configured to turn on the first semiconductor switch in the absence of a fault condition when provided with sufficient power from the power supply unit.

8 . An electric switching device according to claim 1 , wherein the first control and driver unit is configured to turn off the first semiconductor switch when a fault condition is detected.

9 . An electric switching device according to claim 1 , wherein the second control and driver unit is configured to detect an overcurrent condition falling within a specified time-current curve and, based on detecting the overcurrent condition falling within the specified time-current curve, provide power and a signal to the first control and driver unit to turn on the first semiconductor switch.

10 . An electric switching device according to claim 1 , wherein the second control and driver unit is configured to switch off the second semiconductor switch if a source voltage at the first conductor path is under a predefined level and if the first control and driver unit is in a deactivated state, and if a fault current, over and short-circuit currents, is flowing at least in the first conductor path.

11 . An electric switching device according to claim 1 , wherein a mechanical bypass switch is arranged in the first conductor path, the mechanical bypass switch is connected in parallel to the first semiconductor circuit arrangement.

12 . An electric switching device according to claim 1 , wherein the first semiconductor circuit arrangement is connected via a rectifier with the first conductor path.

13 . An electric switching device according to claim 1 , wherein the first semiconductor circuit arrangement is embodied as bridge circuit.

14 . An electric switching device according to claim 1 , wherein the first control and driver unit is connected to the second control and driver unit and/or the second semiconductor switch.

15 . An electric switching device according to claim 1 , wherein the first semiconductor switch is an IGBT or enhancement-FET.

16 . An electric switching device according to claim 1 , wherein the second semiconductor switch is an JFET.

17 . An electric switching device according to claim 1 , further comprising a voltage-independent residual-current device.

18 . An electric switching device according to claim 17 , wherein the voltage-independent residual-current device is connected to the second control and driver unit which is able to activate the second control driver unit in case of detecting a residual current.

19 . The electric switching device according to claim 1 , further comprising at least a first normally-closed galvanic separation relay arranged in the first conductor path of the low-voltage protective device.

20 . An electric switching device according to claim 1 , wherein the control and power supply unit is configured to trigger opening of contacts of the voltage-independent RCD by simulating residual current the electronic unit of the voltage-independent RCD to provide safe isolation in case of detection of overcurrent and or short circuit current conditions.

21 . An electric switching device according to claim 1 , further comprising a normally open galvanic separation relay arranged in the first conductor path of the electric switching device.

22 . An electric switching device according to claim 21 , wherein the normally open galvanic separation relay is disposed between a voltage independent residual current device and the load, and wherein an additional output connection is disposed between the voltage independent residual current device and the normally open galvanic separation relay.

23 . An electric switching device according to claim 1 , wherein the electric switching device is formed as a complete circuit breaker built in a common house.

24 . An electric switching device according to claim 1 , wherein the voltage-independent residual current device is connected to the power supply and control unit.

25 . An electric switching device according to claim 1 , wherein, in the case that the internal power supply and control unit is not active or is incapable of supplying power, the self-powered second control and driver unit is configured to activate the not-self powered first control and driver u

Assignees

• Eaton Intelligent Power Ltd

Inventors

• Askan Kenan

Classifications

• H03K17/687

  the devices being field-effect transistors · CPC title

• H03K17/567

  Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT · CPC title

• H02H3/105

  responsive to excess current and fault current to earth · CPC title

• H01H9/541

  Contacts shunted by semiconductor devices · CPC title

• H01H2009/546

  the static switching means being triggered by the voltage over the mechanical switch contacts · CPC title