Regenerating method for inner member of plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-2025046582-A1
Application number	US-202218280390-A
Country	US
Kind code	A1
Filing date	May 23, 2022
Priority date	May 23, 2022
Publication date	Feb 6, 2025
Grant date	—

Abstract

An inner wall member 40 provided on the inner wall of a processing chamber, in which plasma processing is performed, includes a base 41 , an anodized film 42 a , and a sprayed film 42 b . The base 41 has a surface FS 1 , a surface FS 2 located at a position higher than the surface FS 1 , and has a side surface SS 1 . A method for regenerating the inner wall member 40 includes the steps of (a) covering the anodized film 42 a exposed from the sprayed film 42 b by a mask material 100 , (b) removing, by blasting, the sprayed film 42 b on the surface FS 2 while leaving the sprayed film 42 b on the side surface SS 1 and part of the surface FS 1 , (c) removing the mask material 100 , (d) covering the anodized film 42 a , which is located at a position away from the remaining sprayed film 42 b , by a mask material 101 , (e) forming a new sprayed film 42 b on the surface FS 2 , on the side surface SS 1 , and on part of the surface FS 1 by spraying so as to cover the remaining sprayed film 42 b , and (f) removing the mask material 101.

First claim

1 . A method for regenerating an inner wall member provided on an inner wall of a processing chamber of a plasma processing apparatus, the processing chamber being a chamber in which plasma processing is performed,
the inner wall member including: a base having a first surface, a second surface located at a position higher than the first surface, and a first side surface connecting the first surface and the second surface; an anodized film formed on the first surface and the first side surface; and a first sprayed film formed on the second surface, on the first side surface, and on part of the first surface so as to cover the anodized film on the first side surface and cover part of the anodized film on the first surface, the method comprising the steps of:
(a) covering the anodized film exposed from the first sprayed film by a first mask material;
(b) after the step (a), removing, by blasting, the first sprayed film on the second surface while leaving the first sprayed film on the first side surface and on part of the first surface;
(c) after the step (b), removing the first mask material;
(d) after the step (c), covering the anodized film located at a position away from the remaining first sprayed film by a second mask material,
(e) after the step (d), forming by spraying a second sprayed film including the same material as the first sprayed film on the second surface, on the first side surface, and on part of the first surface so as to cover the remaining first sprayed film; and
(f) after the step (e), removing the second mask material.

2 . The method according to claim 1 , wherein
the base has a third surface located at a position higher than the first surface but lower than the second surface, and a second side surface connecting the first surface and the third surface, the anodized film is also formed on the third surface and on the second side surface, and in the step (d), the anodized film on the third surface is covered by the second mask material.

3 . The method according to claim 2 , wherein
in the step (e), the second sprayed film is formed by projecting particles including the same material as the first sprayed film from a direction from the third surface toward the first surface and inclined at a predetermined angle with respect to the first surface.

4 . The method according to claim 3 , wherein
in the step (e), projection of the particles is stopped before the second sprayed film comes into contact with the second mask material.

5 . The method according to claim 1 , wherein
in the step (b), the blasting is performed by projecting blasting particles from a direction from the second surface toward the first surface and inclined at a predetermined angle with respect to the first surface.

6 . The method according to claim 1 , wherein
the base has a cylindrical shape with a predetermined thickness between inner circumference and outer circumference of the cylindrical shape, and the first surface, the second surface, and the first side surface are provided on the outer circumferential side of the base.

7 . A method for regenerating an inner wall member provided on an inner wall of a processing chamber of a plasma processing apparatus, the processing chamber being a chamber in which plasma processing is performed,
the inner wall member including a base having a first surface, a second surface located at a position higher than the first surface, a first side surface connecting the first surface and the second surface, a third surface located at a position higher than the first surface but lower than the second surface, and a second side surface connecting the first surface and the third surface, an anodized film formed on the third surface, on the second side surface, on the first surface, and on the first side surface, and a first sprayed film formed on the second surface, on the first side surface, and on part of the first surface so as to cover the anodized film formed on the first side surface and part of the anodized film formed on the first surface, the method comprising the steps of:
(a) covering the anodized film exposed from the first sprayed film by a first mask material;
(b) after the step (a), removing the first sprayed film on the second surface while leaving the first sprayed film on the first side surface and part of the first surface by projecting blasting particles from a direction from the second surface toward the first surface and inclined at a predetermined angle with respect to the first surface;
(c) after the step (b), removing the first mask material;
(d) after the step (c), covering the anodized film on the third surface by a second mask material;
(e) after the step (d), forming a second sprayed film on the second surface, on the first side surface, and on part of the first surface so as to cover the remaining first sprayed film by projecting particles including the same material as the first sprayed film from a direction from the third surface toward the first surface and inclined at a predetermined angle with respect to the first surface; and
(f) after the step (e), removing the second mask material.

8 . The method according to claim 7 , wherein
in the step (e), projection of the particles is stopped before the second sprayed film comes into contact with the second mask material.

9 . The method according to claim 7 , wherein
the base has a cylindrical shape with a predetermined thickness between inner circumference and outer circumference of the cylindrical shape, and the first surface, the second surface, the third surface, the first side surface, and the second side surface are provided on the outer circumferential side of the base.

Assignees

• Hitachi High Tech Corp

Inventors

• Wang Wenhao
• Kawaguchi Tadayoshi
• Nagai Koji

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32477

  characterised by the means for protecting vessels or internal parts, e.g. coatings · CPC title

• C23C4/18

  After-treatment · CPC title

• H01J37/32495

  Means for protecting the vessel against plasma · CPC title

• C23C4/02

  Pretreatment of the material to be coated, e.g. for coating on selected surface areas · CPC title