Silicon-containing group 4 precursors and deposition of metal-containing films

Patent metadata

Field	Value
Publication number	US-2025034181-A1
Application number	US-202418784513-A
Country	US
Kind code	A1
Filing date	Jul 25, 2024
Priority date	Jul 26, 2023
Publication date	Jan 30, 2025
Grant date	—

Abstract

Disclosed are Metal-containing film forming compositions comprising metal precursors having the formula M[N(R1)A(R2)(R3)(NR4R5)]a(L1)b(L2)c(L3)d. These precursors are useful as single-source precursors for depositing metal silicate via vapor deposition processes.

First claim

What is claimed is:

1 . A chemical suitable for use as a vapor phase deposition precursor, the chemical have a formula

wherein:
M=a transition metal, a rare earth element (lanthanide elements, Y, Sc), an alkali metal, or an alkaline earth metal; a+b+2c=the oxidation state of the metal M; and a, b, c, d are each ≥0;
A=C, Si, Ge
R 1 , R 2 , R 3 , R 4 , R 5 are each independently selected from H, C 1 -C 10 branched or linear alkyl or fluoroalkyl chain;
L 1 is/are −1 anionic ligands, that are typically selected from halides, —OR a , —NR a R b , amidinate group, beta diketonate, non-fluorinated dienyl group, alkyl group; with each of R a and R b being independently selected from the group consisting of H and —(CX 2 ) p CY 3 ; each X is independently H or F, each Y is independently H or F, p=0-10;
L 2 is/are −2 anionic ligands, that are typically selected from imido groups ═N—R c (R c ═C 1 -C 6 linear, cyclic, or branched), diamines (e.g. R c —N—C 2 H 4 —N—R c ) or Cp linkaged amine (Cp-C x H y —N—R c ); and
L 3 is/are neutral ligands or adducts, selected from 1) Oxygen based ligands: Aliphatic and aromatic—alcohols, diols, ethers, epoxides, aldehydes, ketones, carboxylic acids, enols, esters, anhydrides, phenols, substituted phenols; 2) Nitrogen based ligands: Aliphatic and aromatic—amines, imines, imides, amides, azides, cyanates, nitrile, nitrate, nitrite, nitrogen containing heterocycles; 3) Sulfur based ligands: aliphatic and aromatic—thiols, sulfides, disulfide, sulfoxide, sulfone, thiocyanates, isothiocyanates, thioesters; 4) Phosphorus based ligands: aliphatic and aromatic phosphines, phosphonic acid, phosphodiesters; 5) Boron based ligands: aliphatic and aromatic—boronic acid, boronic ester, borinic esters; 6) carbon based ligands: aliphatic-alkenes, alkynes and benzene derivatives. 7) Halide containing organic molecules, inorganic halide, e.g. 12, H 2 O vapor, H 2 gas, CO gas, CS gas, NOx gas, any radical form of gases at RT.

2 . The chemical of claim 1 , having at least one of L 1 or L 2 and at least one of L 3 .

3 . The chemical of claim 2 , wherein the least one of L 3 is covalently linked to the at least one of L 1 or L 2 .

4 . The chemical of claim 1 , wherein A is selected from Ge or Si.

5 . The chemical of claim 1 , wherein A is Si.

6 . The chemical of claim 1 , wherein the chemical is Zr[N(iPr)SiMe 2 (NMe 2 )](NMe 2 ) 3 .

7 . A composition, comprising a vapor phase of the chemical of claim 1 .

8 . The composition of claim 7 , further comprising a carrier gas, preferably comprising an inert gas selected from Helium, Nitrogen, Argon, Neon, Xenon and combinations thereof.

9 . A method of vapor phase depositing a metal silicate or a metal-germanium containing material on a surface, the method comprising:
a. providing a substrate having a surface, and b. exposing the substrate to a vapor phase of the chemical of claim 1 , under conditions suitable to form a deposited material, comprising M and A, on the surface.

10 . The method of claim 9 , wherein the deposited material is a contiguous and conformal film or layer on the surface of the substrate.

11 . The method of claim 9 , further comprising exposing the surface of the substrate to a gaseous co-reactant capable of acting as a reducing agent, contemporaneously with, or subsequent to claim 14 , step b).

12 . The method of claim 11 , wherein the gaseous co-reactant is ammonia or hydrogen.

13 . The vapor phase method of claim 9 , wherein the vapor phase method is a chemical vapor phase deposition or an atomic layer deposition.

Assignees

• Air Liquide

Inventors

• Kim Su-Hyun
• Noh Wontae

Classifications

• C23C16/30

  Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides · CPC title

• C07F17/00

  Metallocenes · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F7/21 Primary

  Cyclic compounds having at least one ring containing silicon, but no carbon in the ring · CPC title