SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR

Patent metadata

Field	Value
Publication number	US-2025015144-A1
Application number	US-202418894828-A
Country	US
Kind code	A1
Filing date	Sep 24, 2024
Priority date	Mar 25, 2022
Publication date	Jan 9, 2025
Grant date	—

Abstract

A substrate with a β-gallium oxide film includes a Si single crystal substrate and a β-gallium oxide film provided on the Si single crystal substrate. A substrate with a β-gallium oxide film includes a gallium nitride single crystal substrate and a β-gallium oxide film provided on the gallium nitride single crystal substrate.

First claim

1 . A substrate with a β-gallium oxide film, comprising:
a Si single crystal substrate; and
a β-gallium oxide film provided on the Si single crystal substrate,
wherein the β-gallium oxide film is uniaxially oriented.

2 . The substrate with a β-gallium oxide film according to claim 1 , wherein the β-gallium oxide film is a single crystal.

3 . The substrate with a β-gallium oxide film according to claim 1 , wherein a peak of a β-gallium oxide that belongs to a (100) plane is observed by symmetrical X-ray diffraction.

4 . The substrate with a β-gallium oxide film according to claim 1 , wherein the β-gallium oxide film oriented in a (100) plane is provided on the Si single crystal substrate oriented in the (100) plane.

5 . The substrate with a β-gallium oxide film according to claim 1 , wherein a [001] direction of the Si single crystal substrate matches a [0-11] direction of the β-gallium oxide film.

6 . The substrate with a β-gallium oxide film according to claim 1 , wherein the Si single crystal substrate and the β-gallium oxide film are in direct contact with each other.

7 . The substrate with a β-gallium oxide film according to claim 1 , wherein the β-gallium oxide film is provided on the Si single crystal substrate via at least one of a nucleation layer and a surface modification layer.

8 . The substrate with a β-gallium oxide film according to claim 1 , wherein the β-gallium oxide film has a thickness of 0.1 μm or more and 50 μm or less.

9 . A substrate with a β-gallium oxide film, comprising:
a gallium nitride single crystal substrate; and
a β-gallium oxide film provided on the gallium nitride single crystal substrate,
wherein the β-gallium oxide film is uniaxially oriented.

10 . The substrate with a β-gallium oxide film according to claim 9 , wherein the β-gallium oxide film is a single crystal.

11 . The substrate with a β-gallium oxide film according to claim 9 , wherein a peak of a β-gallium oxide that belongs to a (100) plane is observed by symmetrical X-ray diffraction.

12 . The substrate with a β-gallium oxide film according to claim 9 , wherein the β-gallium oxide film oriented in a (100) plane is provided on the gallium nitride single crystal substrate oriented in a (0001) plane.

13 . The substrate with a β-gallium oxide film according to claim 9 , wherein the gallium nitride single crystal substrate and the β-gallium oxide film are in direct contact with each other.

14 . The substrate with a β-gallium oxide film according to claim 9 , wherein the β-gallium oxide film is provided on the gallium nitride single crystal substrate via at least one of a nucleation layer and a surface modification layer.

15 . The substrate with a β-gallium oxide film according to claim 9 , wherein the β-gallium oxide film has a thickness of 0.1 μm or more and 50 μm or less.

16 . A method for producing a substrate with a β-gallium oxide film, comprising:
providing a single crystal substrate in a reaction chamber;
generating plasma from a mixed gas containing oxygen and ozone to dissociate the ozone into oxygen constituent particles, and supplying the oxygen constituent particles to the reaction chamber under a reduced pressure;
supplying a gallium element to the reaction chamber; and
epitaxially growing a β-gallium oxide on the single crystal substrate.

17 . The method for producing a substrate with a β-gallium oxide film according to claim 16 , wherein a proportion of a lattice constant mismatch between the single crystal substrate and the epitaxially grown β-gallium oxide film is 15% or less.

18 . The method for producing a substrate with a β-gallium oxide film according to claim 16 , wherein as the single crystal substrate, a Si single crystal substrate, a gallium nitride single crystal substrate, or a sapphire single crystal substrate is used.

19 . The method for producing a substrate with a β-gallium oxide film according to claim 16 , wherein a surface of the single crystal substrate is subjected to an oxygen plasma treatment, and then the β-gallium oxide is epitaxially grown.

20 . The method for producing a substrate with a β-gallium oxide film according to claim 16 , wherein the β-gallium oxide is epitaxially grown at a film formation temperature of 600° C. or lower.

21 . The method for producing a substrate with a β-gallium oxide film according to claim 16 , wherein a concentration of the ozone is set to 10 vol % or more with respect to a total of the oxygen and the ozone in the mixed gas.

Assignees

• National Univ Corporation Tokai National Higher Education And Research System
• Agc Inc

Inventors

• Hori Masaru
• Oda Osamu
• DHASIYAN Arun Kumar
• Hayashi Atsushi
• Aomine Nobutaka

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title