Semiconductor storage device and manufacturing method of semiconductor storage device

Patent metadata

Field	Value
Publication number	US-2025014996-A1
Application number	US-202418760040-A
Country	US
Kind code	A1
Filing date	Jul 1, 2024
Priority date	Jul 6, 2023
Publication date	Jan 9, 2025
Grant date	—

Abstract

A semiconductor storage device of an embodiment includes a multi-layered body and a plurality of contacts. The multi-layered body includes a plurality of gate electrode layers and a plurality of insulating layers. The plurality of gate electrode layers include a first gate electrode layer, a second gate electrode, and a third gate electrode layer. The multi-layered body includes a first protruding part protruding from the first gate electrode layer toward a first contact, and a second protruding part protruding from the third gate electrode layer toward a third contact. The first contact is in contact with the first protruding part. A second contact is in contact with the second gate electrode layer. The third contact is in contact with the second protruding part.

First claim

What is claimed is:

1 . A semiconductor storage device comprising:
a multi-layered body including a plurality of gate electrode layers and a plurality of insulating layers, the plurality of gate electrode layers and the plurality of insulating layers are alternately stacked one by one in a first direction in the multi-layered body; and a plurality of contacts each extending in the first direction, wherein the multi-layered body includes a first region, a second region, and a third region, the first region, the second region, and the third region are in a second direction different from the first direction in order of the first region, the second region, and the third region, the plurality of contacts include a first contact in the first region, a second contact in the second region, and a third contact in the third region, the plurality of gate electrode layers include a first gate electrode layer, a second gate electrode layer, and a third gate electrode layer, the second gate electrode layer is on a first side in the first direction with respect to the first gate electrode layer, the third gate electrode layer is on the first side with respect to the second gate electrode layer, the multi-layered body includes a first protruding part and a second protruding part, the first protruding part has electroconductivity, the first protruding part protrudes from the first gate electrode layer toward the first contact, the second protruding part has electroconductivity, the second protruding part protrudes from the third gate electrode layer toward the third contact, the first contact is in contact with the first protruding part, the second contact is in contact with the second gate electrode layer, and the third contact is in contact with the second protruding part.

2 . The semiconductor storage device according to claim 1 , wherein
when a side opposite to the first side in the first direction is defined as a second side, the plurality of contacts include a plurality of contacts of a first group in the first region, the first group includes the first contact, the plurality of gate electrode layers include a plurality of gate electrode layers of a first group, the first group is on the second side with respect to the second gate electrode layer, the first group includes the first gate electrode layer, the first protruding part is on each of the plurality of gate electrode layers of the first group, each contact included in the plurality of contacts of the first group is in contact with the first protruding part, the first protruding part is on a gate electrode layer included in the plurality of gate electrode layers of the first group and corresponding to the contact.

3 . The semiconductor storage device according to claim 2 , wherein
the plurality of contacts include a plurality of contacts of a second group in the second region, the second group includes the second contact, the plurality of gate electrode layers include a plurality of gate electrode layers of a second group, the second group is between the plurality of gate electrode layers of the first group and the third gate electrode layer, the second group includes the second gate electrode layer, each contact included in the plurality of contacts of the second group is in contact with a gate electrode layer included in the plurality of gate electrode layers of the second group and corresponding to the contact.

4 . The semiconductor storage device according to claim 3 , wherein
the plurality of contacts include a plurality of contacts of a third group in the third region, the third group includes the third contact, the plurality of gate electrode layers include a plurality of gate electrode layers of a third group, the third group is on the first side with respect to the gate electrode layer of the second group, the third group includes the third gate electrode layer, the second protruding part is on each gate electrode layer of the third group, each contact included in the plurality of contacts of the third group is in contact with the second protruding part on a gate electrode layer included in the plurality of gate electrode layers of the third group and corresponding to the contact.

5 . The semiconductor storage device according to claim 1 , wherein
the second gate electrode layer has a length in the second direction larger than that of the first gate electrode layer in a connection region, the plurality of contacts and the plurality of gate electrode layers are connected in the connection region, and the third gate electrode layer has a length in the second direction larger than that of the second gate electrode layer in the connection region.

6 . The semiconductor storage device according to claim 1 , wherein
each of the first contact, the second contact, and the third contact includes a barrier metal film, and in a cross section in the first direction and the second direction, a shortest distance between the barrier metal film of the second contact and the second gate electrode layer is smaller than a shortest distance between the barrier metal film of the first contact and the first gate electrode layer, and is smaller than a shortest distance between the barrier metal film of the third contact and the third gate electrode layer.

7 . The semiconductor storage device according to claim 1 , wherein
the first contact includes a first end in contact with the first protruding part, the first protruding part includes a second end in contact with the first end of the first contact, and a width of the first end in the second direction is larger than a width of the second end in the second direction.

8 . The semiconductor storage device according to claim 1 , wherein
each of the first gate electrode layer, the second gate electrode layer, and the third gate electrode layer contains a first material, the first material being tungsten, molybdenum, or silicon, and each of the first protruding part and the second protruding part is a redeposition part of the first material.

9 . The semiconductor storage device according to claim 1 , wherein
the multi-layered body includes a fourth region and a fifth region, the first region, the second region, the third region, the fourth region, and the fifth region are in the second direction in order of the first region, the second region, the third region, the fourth region, and the fifth region, the plurality of contacts include a fourth contact in the fourth region and a fifth contact in the fifth region, the plurality of gate electrode layers include a fourth gate electrode layer and a fifth gate electrode layer, the fourth gate electrode layer is on the first side with respect to the third gate electrode layer, the fifth gate electrode layer is on the first side with respect to the fourth gate electrode layer, the multi-layered body includes a conductive third protruding part protruding from the fifth gate electrode layer toward the fifth contact, the fourth contact is in contact with the fourth gate electrode layer, and the fifth contact is in contact with the third protruding part.

10 . A manufacturing method of a semiconductor storage device, comprising:
forming a multi-layered body, the multi-layered body including a plurality of first layers and a plurality of second layers, the plurality of first layers and the plurality of second layers are alternately stacked one by one in a first direction in the multi-layered body, the multi-layered body including a first region, a second region, and a third region, the first region, the second region, and the third region being in a second direction different from the first direc

Assignees

• Kioxia Corp

Inventors

• Noda Kosei

Classifications

• H10W20/435 Primary

  Cross-sectional shapes or dispositions of interconnections · CPC title

• H10B41/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title

• H10B41/35 Primary

  with a cell select transistor, e.g. NAND · CPC title

• H10B43/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title

• H10B43/35 Primary

  with cell select transistors, e.g. NAND · CPC title