Light-emitting diode and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2024429349-A1
Application number	US-202418820789-A
Country	US
Kind code	A1
Filing date	Aug 30, 2024
Priority date	Jan 19, 2018
Publication date	Dec 26, 2024
Grant date	—

Abstract

Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

First claim

What is claimed is:

1 . A light-emitting diode, comprising:
a light-emitting epitaxial layered unit which semiconductor layer, a second includes a first semiconductor layer, and a light-emitting layer sandwiched between said first and second semiconductor layers; an insulation layer; a transparent conductive layer which is disposed on said first semiconductor layer and which covers said insulation layer; a protective layer which is disposed on said transparent conductive layer and which has at least one first hole to permit said transparent conductive layer to be exposed; a first electrode which is disposed on said protective layer, and which includes a pad portion and an extension portion, said extension portion filling said at least one first hole so as to electrically connect said transparent conductive layer, wherein said protective layer further has a second hole that corresponds in position to said pad portion, and that includes at least one hole-protruding portion protruding radially and outwardly.

2 . The light-emitting diode according to claim 1 , wherein said insulation layer is disposed between said first semiconductor layer and said transparent conductive layer.

3 . The light-emitting diode according to claim 1 , wherein a portion of said insulation layer is disposed at an area corresponding in position to said extension portion.

4 . The light-emitting diode according to claim 1 , wherein a part of said first electrode is in direct contact with a portion of said first semiconductor layer.

5 . The light-emitting diode according to claim 1 , wherein said light-emitting epitaxial layered unit further includes a mesa portion at which said second semiconductor layer is exposed, said protective layer covering said mesa portion and further having a hole to permit a part of said second semiconductor layer to expose.

6 . The light-emitting diode according to claim 5 , further comprising a second electrode disposed on said insulation layer, said second electrode being electrically connected to said second semiconductor layer through said hole and being spaced apart from said first electrode.

7 . The light-emitting diode according to claim 1 , wherein said light-emitting epitaxial layered unit further has a plurality of vias, each of which extends through said first semiconductor layer and said light-emitting layer to terminate at said second semiconductor layer so as to permit said second semiconductor layer to be exposed.

8 . The light-emitting diode according to claim 1 , further comprising a second electrode electrically connected to said second semiconductor layer and spaced apart from said first electrode.

9 . The light-emitting diode according to claim 8 , wherein said second electrode includes an extension portion which is disposed on said protective layer and which extends downwardly to penetrate through said first semiconductor layer and said light-emitting layer to form an ohmic contact with said second semiconductor layer.

10 . The light-emitting diode according to claim 1 , wherein said at least one hole-protruding portion includes a plurality of hole-protruding portions that protrude radially and outwardly and that are angularly spaced apart from one another.

11 . The light-emitting diode according to claim 10 , wherein said hole-protruding portions are respectively aligned with a plurality of insulation blocks of said insulation layer.

12 . The light-emitting diode according to claim 1 , wherein said protective layer has a thickness ranging from 200 nm to 2000 nm.

13 . The light-emitting diode according to claim 12 , wherein the thickness of the protective layer ranges from 150 nm to 500 nm.

14 . The light-emitting diode according to claim 1 , wherein said insulation layer, said transparent conductive layer, and said protective layer are laminated sequentially on said first semiconductor layer.

15 . The light-emitting diode according to claim 1 , wherein said at least one first hole has a plurality of first holes.

16 . The light-emitting diode according to claim 15 , wherein said extension portion of said first electrode fills said first holes so as to electrically connect said transparent conductive layer.

17 . The light-emitting diode according to claim 1 , wherein said pad portion of said first electrode is in contact with said transparent conductive layer through said second hole.

18 . The light-emitting diode according to claim 1 , wherein said protective layer is made of SiO 2 , SiN 4 , Al 2 O 3 or TiO 2 .

19 . The light-emitting diode according to claim 1 , wherein said protective layer has a thickness which is determined according to an equation of d=(2k+1)Λ/4n, where d is the thickness of said protective layer, k is a natural number, Λ is a wavelength of light emitted from said light-emitting layer and n is a refractive index of said protective layer.

20 . The light-emitting device according to claim 1 , wherein said at least one hole-protruding portion includes two to twenty hole-protruding portions.

Assignees

• Quanzhou Sanan Semiconductor Tech Co Ltd

Inventors

• Lin Su-Hui
• Wang Feng
• Hong ling-yuan
• Hsu Sheng-Hsien
• Chen Sihe
• Chen Dazhong
• Peng Kang-Wei
• Chang Chia-Hung

Classifications

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/841 Primary

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/83

  Electrodes · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/816 Primary

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title