Grounded socket and method for insulation fault location in an ungrounded power supply system including insulation monitoring
US-2021382104-A1 · Dec 9, 2021 · US
US2024426894A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2024426894-A1 |
| Application number | US-202418749527-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 20, 2024 |
| Priority date | Jun 23, 2023 |
| Publication date | Dec 26, 2024 |
| Grant date | — |
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The invention relates to a method ( 1 ) and to an electric circuit arrangement ( 2 ) for selective insulation monitoring in a power supply system ( 10 ) having isolable subsystems ( 20 ) which each has an integrated energy storage ( 22 ). In this context, the subsystem to be monitored ( 20 ) is cyclically and temporarily isolated (S 1 ) for the duration of a measuring interval (ΔT) with all-pole semiconductor disconnectors (SW); operation of the isolated subsystem ( 20 ) to be monitored is continued (S 2 ) by means of its integrated energy storage ( 22 ) during the measuring interval (ΔT); and an insulation resistance (R f ) of the subsystem ( 20 ) is measured (S 3 ) during the measuring interval (ΔT) by means of a standard insulation monitoring device (IMD).
Opening claim text (preview).
1 . A method ( 1 ) for selective insulation monitoring in a power supply system ( 10 ) having isolable subsystems ( 20 ) which each has an integrated energy storage ( 22 ), the method comprising the following steps: cyclic, temporary isolation (S 1 ) of the subsystem to be monitored for the duration of a measuring interval (ΔT) with all-pole semiconductor disconnectors (SW), continued operation (S 2 ) of the isolated subsystem to be monitored ( 20 ) by means of its integrated energy storage ( 22 ) during the measuring interval (ΔT), measuring (S 3 ) an insulation resistance (R f ) of the subsystem ( 20 ) during the measuring interval (ΔT) by means of a standardized insulation monitoring device (IMD). 2 . The method according to claim 1 , characterized in that the measurement (S 3 ) is implemented using a measuring method which allows a sufficiently reliable determination of the insulation resistance (R f ) within precisely one measuring interval (ΔT) or in a cyclic sequence of several measuring intervals (ΔT). 3 . The method according to claim 1 , characterized in that the implemented measuring method is a pulse measuring method with an evaluation of a time constant determined in the subsystem ( 20 ) by a capacitance charge. 4 . The method according to claim 1 , characterized by the use of semiconductor disconnectors (SW) having sufficiently high-impedance isolation properties. 5 . The method according claim 1 , characterized in that should the semiconductor disconnectors (SW) not have sufficiently high-impedance isolation properties, a basic insulation value is taken into consideration when determining the insulation resistance (R f ). 6 . The method according to claim 1 , characterized in that the convertor's energy storage ( 22 ) is used when using a convertor system in the subsystem ( 20 ) and/or the switching power supply's energy storage ( 22 ) is used when using switching power supplies. 7 . The method according to claim 1 , characterized in that a semiconductor rectifier ( 30 ) is used as the semiconductor disconnector (SW). 8 . An electric circuit arrangement ( 2 ) for selective insulation monitoring in a power supply system ( 10 ) having isolable subsystems ( 20 ) which each has an integrated energy storage, the electric circuit arrangement ( 2 ) having all-pole semiconductor disconnectors (SW) for cyclic, temporary isolation (S 1 ) of the subsystem to be monitored ( 20 ) for the duration of a measuring interval (ΔT), operation of the isolated subsystem ( 20 ) to be monitored being continued by means of its integrated energy storage ( 22 ) during the measuring interval (ΔT), and having a standard insulation monitoring device (IMD) for measuring (S 3 ) an insulation resistance (R f ) of the subsystem ( 20 ) during the measuring interval (ΔT). 9 . The electric circuit arrangement ( 2 ) according to claim 8 , characterized in that the semiconductor disconnectors (SW) have a sufficiently high-impedance isolation property.
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