Light-emitting device

Patent metadata

Field	Value
Publication number	US-2024421249-A1
Application number	US-202418740925-A
Country	US
Kind code	A1
Filing date	Jun 12, 2024
Priority date	Jun 15, 2023
Publication date	Dec 19, 2024
Grant date	—

Abstract

A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface; a contact electrode covering the second semiconductor layer and comprising a first side surface; an insulating reflective structure covering the contact electrode and comprising a plurality of insulating reflective structure openings; a connection layer covering the insulating reflective structure and filling into the plurality of insulating reflective structure openings, and comprising a second side surface; and a metal reflective layer covering the connection layer and filling into the plurality of insulating reflective structure openings, and comprising a third side surface; wherein in a cross-sectional view of the light-emitting device, a first pitch is between the first side surface and the inclined surface, a third pitch is between the third side surface and the inclined surface, and the third pitch is smaller than the first pitch.

First claim

What is claimed is:

1 . A light-emitting device, comprising:
a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface connected to the first semiconductor layer; a contact electrode covering the second semiconductor layer and comprising a first side surface; an insulating reflective structure covering the contact electrode and comprising a plurality of insulating reflective structure openings to expose the contact electrode; a connection layer covering the insulating reflective structure and filling into the plurality of insulating reflective structure openings, and comprising a second side surface; and a metal reflective layer covering the connection layer and filling into the plurality of insulating reflective structure openings of the insulating reflective structure, and comprising a third side surface; wherein in a cross-sectional view of the light-emitting device,
a first pitch is between the first side surface and the inclined surface, a third pitch is between the third side surface and the inclined surface, and the third pitch is smaller than the first pitch.

2 . The light-emitting device according to claim 1 , wherein the first pitch is greater than 6 μm.

3 . The light-emitting device according to claim 1 , wherein a second pitch is between the second side surface and the inclined surface and is in a range between 0.1 μm and 6 μm.

4 . The light-emitting device according to claim 1 , wherein the third pitch is in a range between 0.1 μm and 6 μm.

5 . The light-emitting device according to claim 1 , wherein a second pitch is between the second side surface and the inclined surface, and the second pitch is smaller than the third pitch.

6 . The light-emitting device according to claim 1 , wherein the second side surface is flush with the third side surface in the cross-sectional view of the light-emitting device.

7 . The light-emitting device according to claim 1 , wherein the contact electrode and the connection layer comprise the same materials.

8 . The light-emitting device according to claim 1 , wherein the contact electrode and the connection layer comprise different materials.

9 . The light-emitting device according to claim 1 , wherein a thickness of the connection layer is smaller than a thickness of the contact electrode.

10 . The light-emitting device according to claim 1 , wherein the insulating reflective structure comprises a distributed Bragg reflector (DBR) covering the inclined surface of the semiconductor mesa, and covering the first semiconductor layer.

11 . The light-emitting device according to claim 1 , wherein in the cross-sectional view of the light-emitting device, the metal reflective layer covers the inclined surface of the semiconductor mesa, and the inclined surface of the semiconductor mesa is between the first side surface of the contact electrode and the third side surface of the metal reflective layer.

12 . The light-emitting device according to claim 1 , further comprises a second insulating layer covering the metal reflective layer and the insulating reflective structure, wherein the insulating reflective structure comprises a first insulating layer and an insulating reflective layer covering the inclined surface of the semiconductor mesa, and the insulating reflective layer comprises an end disposed between the first insulating layer and the second insulating layer.

13 . The light-emitting device according to claim 12 , wherein the first insulating layer comprises a plurality of first insulating layer openings to expose the contact electrode, and the insulating reflective layer comprises a plurality of insulating reflective layer openings located on the first insulating layer, and the plurality of insulating reflective layer openings each is correspondingly disposed on the plurality of first insulating layer openings.

14 . The light-emitting device according to claim 13 , wherein one of the plurality of first insulating layer openings comprises a second sidewall, and one of the plurality of insulating reflective layer openings disposed on the one of the plurality of first insulating layer openings comprises a third sidewall, and wherein a second inclined angle of the second sidewall is the same as a third inclined angle of the third sidewall.

15 . The light-emitting device according to claim 14 , wherein the connection layer covers the third sidewall of the plurality of insulating reflective layer openings and second sidewall of the plurality of first insulating layer openings and directly contacts the contact electrode.

16 . The light-emitting device according to claim 12 , wherein the first insulating layer comprises a plurality of first insulating layer openings to expose the contact electrode, each of the plurality of first insulating layer openings comprises a first insulating layer upper opening and a first insulating layer lower opening, and wherein the first insulating layer upper opening comprises a first inclined surface having a first slope, the first insulating layer lower opening comprises a second inclined surface having a second slope, and the first slope is different from the second slope.

17 . The light-emitting device according to claim 16 , wherein the first insulating layer further comprises a first insulating layer upper surface, and the first insulating layer upper surface comprises two ends connected to the first inclined surface and the second inclined surface respectively.

18 . The light-emitting device according to claim 16 , wherein one of the plurality of insulating reflective layer openings comprises an inclined surface having a slope different from the first slope of the first inclined surface of the first insulating layer upper opening that one of the plurality of first insulating layer openings comprises.

19 . The light-emitting device according to claim 18 , wherein the metal reflective layer comprises a first portion covering the inclined surface of the one of the plurality of insulating reflective layer openings and a second portion covering the first inclined surface of the first insulating layer upper opening or the second inclined surface of the first insulating layer lower opening that the one of the plurality of first insulating layer openings comprises, wherein the second portion comprises a second thickness which is lower than or equal to 50% of a first thickness that the first portion comprises.

20 . The light-emitting device according to claim 18 , wherein the metal reflective layer comprises a first portion covering the inclined surface of the one of the plurality of insulating reflective layer openings and a second portion covering the first inclined surface of the first insulating layer upper opening or in the second inclined surface of the first insulating layer lower opening that the one of the plurality of first insulating layer openings comprises, wherein the second portion comprises a second thickness which is larger than or equal to 50% of a first thickness that the first portion comprises.

Assignees

• Epistar Corp

Inventors

• Hong Meng-Hsiang
• Lin Yu-Ling
• Chen Chao-Hsing
• Ou Chen
• Hung Chien-Ya

Classifications

• H10H20/831

  characterised by their shape · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/8316

  Multi-layer electrodes comprising at least one discontinuous layer · CPC title

• H10H20/835

  Reflective materials · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title