Fabrication of transmission target for reducing effects of electron beam drift in computed tomography x-ray system

Patent metadata

Field	Value
Publication number	US-2024420913-A1
Application number	US-202418816042-A
Country	US
Kind code	A1
Filing date	Aug 27, 2024
Priority date	Jul 27, 2022
Publication date	Dec 19, 2024
Grant date	—

Abstract

A method of fabricating a transmission target for an X-ray system is provided. The method includes forming a substrate and etching at least one via in the substrate. The method includes depositing a layer of seed metal on the surface of the substrate. The method includes filling the vias with a target metal to form target metal blocks.

First claim

What is claimed is:

1 . A method of fabricating a transmission target for an X-ray system, comprising:
forming a substrate; etching at least one via in the substrate; depositing a layer of seed metal on a top surface of the substrate; and filling the vias with a target metal to form target metal blocks.

2 . The method of claim 1 , wherein the vias are etched in the substrate using a BOSCH process.

3 . The method of claim 1 , wherein the layer of seed metal is deposited using an atomic layer deposition process or a physical deposition process.

4 . The method of claim 1 , wherein the substrate is made of silicon, silicon carbide, beryllium, or diamond.

5 . The method of claim 1 , wherein the layer of seed metal is a layer of copper, gold, silver, platinum, aluminum or chromium.

6 . The method of claim 1 , wherein the target metal is copper, gold, molybdenum, silver, aluminum, tungsten, or chromium.

7 . A method of fabricating a transmission target for an X-ray system, comprising:
forming a first substrate; etching at least one via in the first substrate; forming a second substrate; depositing a layer of seed metal on a top surface of the second substrate; placing the first substrate on the second surface with the vias facing down toward the second substrate; removing a portion of the first surface to expose the vias in the first substrate; and filling the vias with a target metal to form target metal blocks in the first substrate.

8 . The method of claim 7 , further comprising bonding the first substrate with the layer of seed metal on the second substrate.

9 . The method of claim 7 , further comprising removing the second substrate.

10 . The method of claim 7 , wherein the first substrate is made of silicon, silicon carbide, beryllium, or diamond.

11 . The method of claim 7 , wherein the second substrate is made of silicon, silicon carbide, beryllium, or diamond.

12 . The method of claim 7 , wherein the vias are etched in the first substrate using a BOSCH process.

13 . The method of claim 7 , wherein the layer of seed metal is deposited on the surface of the second substrate using an atomic layer deposition process or a physical vapor deposition process.

14 . The method of claim 7 , wherein the layer of seed metal is a layer of copper, gold, platinum, silver, aluminum or chromium.

15 . The method of claim 7 , wherein the target metal is copper, gold, molybdenum, silver, aluminum, tungsten, or chromium.

16 . A method of fabricating a transmission target for an X-ray system, comprising:
forming a first substrate; forming a second substrate; depositing a layer of seed metal on the top surface of the second substrate; bonding the first substrate onto the second surface etching at least one via in the first substrate; and filling the vias with a target metal to form target metal blocks in the first substrate.

17 . The method of claim 16 , further comprising removing the second substrate.

18 . The method of claim 16 , further comprising bonding the first substrate with the layer of seed metal on the second substrate.

19 . An X-ray system, comprising:
a cathode configured to emit electrons; an anode positioned in a line of the emitted electrons and configured to pass through at least some of the emitted electrons striking the anode; a transmission target positioned in the line of emitted electrons passing through the anode and configured to produce X-ray beams responsive to the electrons striking the transmission target, the transmission target comprising:
a substrate; and
a target metal block embedded in the substrate, wherein the width of the target metal block is less than the width of the substrate.

20 . The X-ray system of claim 19 , further comprising an X-ray detector configured to detect the X-rays produced by the transmission target and generate corresponding electrical signals.

21 . The X-ray system of claim 19 , wherein the target metal block comprises a via filled with a target metal.

Assignees

• Nat Tech & Eng Solutions Sandia Llc

Inventors

• Souvinec Courtney Leigh Hummell
• Jimenez Jr Edward Steven
• Rockmore Noelle Collins
• Dalton Gabriella
• Thompson Kyle R
• Dagel Amber Lynn
• Lentfer Andrew
• Jordan Matthew

Classifications

• G01N23/046

  using tomography, e.g. computed tomography [CT] · CPC title

• H01J2235/081

  Target material · CPC title

• H01J35/116 Primary

  Transmissive anodes (acting as a window H01J35/186) · CPC title

• C23C16/45555

  applied in non-semiconductor technology · CPC title

• C23C14/18

  on other inorganic substrates · CPC title