Additive-containing silicon-containing resist underlayer film forming composition

Patent metadata

Field	Value
Publication number	US-2024419073-A1
Application number	US-202218704765-A
Country	US
Kind code	A1
Filing date	Oct 27, 2022
Priority date	Oct 28, 2021
Publication date	Dec 19, 2024
Grant date	—

Abstract

A silicon-containing resist underlayer film forming composition that includes a hydrolysis condensate of a hydrolyzable silane represented by Formula (1) or a hydrolyzable silane mixture containing a hydrolyzable silane represented by Formula (2) is the silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution.

First claim

1 . A silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution, the composition comprising: a hydrolysis condensate of a hydrolyzable silane mixture containing at least one of a hydrolyzable silane represented by Formula (1) below and a hydrolyzable silane represented by Formula (2) below:
R 1 a R 2 b Si(R 3 ) 4 —( a+b )  (1)
(In Formula (1), R 1 is a group bonded to a silicon atom, and represents an organic group containing a succinic anhydride skeleton, R 2 is a group bonded to a silicon atom, and independently of one another represents an optionally substituted alkyl group, an optionally substituted halogenated alkyl group, an optionally substituted alkoxyalkyl group, or an organic group containing an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, an alkoxy group, a sulfonyl group, or a cyano group, or a combination of these, R 3 is a group or atom bonded to the silicon atom, and independently of one another represents an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom, and a represents 1, b represents an integer of 0 to 2, and 4-(a+b) represents an integer of 1 to 3)
R 4 a R 5 b Si(R 6 ) 4 —( a+b )  (2)

(In Formula (2), R 4 is a group which is bonded to a silicon atom and represents a monovalent group represented by Formula (2-1) below, and

(In Formula (2-1),
R 201 to R 202 each independently represent a hydrogen atom or an organic group containing an optionally substituted alkyl group, R 203 represents an optionally substituted alkylene group, and * represents a bond bonded to a silicon atom)
R 5 is a group bonded to a silicon atom, and independently of one another represents an optionally substituted alkyl group, an optionally substituted halogenated alkyl group, an optionally substituted alkoxyalkyl group, or an organic group containing an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, an alkoxy group, a sulfonyl group, or a cyano group, or any combination of these,
R 6 is a group or atom bonded to the silicon atom, and each independently represents an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom, and
a represents 1, b represents an integer of 0 to 2, and 4-(a+b) represents an integer of 1 to 3.)

2 . The silicon-containing resist underlayer film forming composition according to claim 1 , further comprising: a compound A having a chemical structure containing a cation AX + and an anion AZ − , the anion having a molecular weight of 65 or more.

3 . The silicon-containing resist underlayer film forming composition according to claim 2 , wherein the anion AZ − is at least one anion selected from the group consisting of anions represented by the following (A) to (E):

(In Formulae (A) to (E),
R 301 represents an optionally substituted alkyl group, an optionally substituted aryl group, an optionally substituted halogenated alkyl group, an optionally substituted aralkyl group, or an organic group containing an ester bond (—C(═O)—O— or —O—C(═O)—), or a combination of these,
Z represents an aromatic ring, a cyclic alkane, or a cyclic alkene with a non-aromatic ring,
R 501 represents an alkyl group in which some or all of the alkyl group may be substituted with a fluorine atom,
R 302 and R 303 each independently represent an alkyl group, and
R 304 and R 305 each independently represent an alkyl group.)

4 . The silicon-containing resist underlayer film forming composition according to claim 1 , wherein the hydrolyzable silane mixture further contains a hydrolyzable silane represented by Formula (3) below:
R 7 a R 8 b Si(R 9 ) 4 —( a+b )  (3)
(In Formula (3), R 7 is a group bonded to a silicon atom, and represents an organic group containing an alkenyl group, R 8 is a group bonded to a silicon atom, and independently of one another represents an optionally substituted alkyl group, an optionally substituted halogenated alkyl group or an optionally substituted alkoxyalkyl group, or represents an organic group containing an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, an alkoxy group, a sulfonyl group, or a cyano group, or a combination of these, R 9 is a group or atom bonded to a silicon atom, and independently of one another represents an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom, and a represents 1, b represents an integer of 0 to 2, and 4-(a+b) represents an integer of 1 to 3.)

5 . The silicon-containing resist underlayer film forming composition according to claim 4 , wherein the hydrolyzable silane mixture further contains a hydrolyzable silane represented by Formula (4) below:
Si(R 10 ) 4   (4)
(In Formula (4), R 10 is a group or atom bonded to a silicon atom, and independently of one another represents an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom.)

6 . A silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution, the composition comprising:
a compound A having a chemical structure containing a cation AX + and an anion AZ − , the anion having a molecular weight of 65 or more.

7 . The silicon-containing resist underlayer film forming composition according to claim 6 , wherein the anion AZ − is at least one anion selected from the group consisting of anions represented by the following (A) to (E):

(In Formulae (A) to (E),
R 301 represents an optionally substituted alkyl group, an optionally substituted aryl group, an optionally substituted halogenated alkyl group, an optionally substituted aralkyl group, or an organic group containing an ester bond (—C(═O)—O— or —O—C(═O)—), or a combination of these,
Z represents an aromatic ring, a cyclic alkane, or a cyclic alkene with a non-aromatic ring,
R 501 represents an alkyl group in which some or all of the alkyl group may be substituted with a fluorine atom,
R 302 and R 303 each independently represent an alkyl group, and
R 304 and R 305 each independently represent an alkyl group.)

8 . A silicon-containing resist underlayer film formed using the resist underlayer film forming composition according to claim 1 .

9 . A pattern forming method comprising:
a process of forming an organic underlayer film on a semiconductor substrate; a process of forming a silicon-containing resist underlayer film by applying the resist underlayer film forming composition according to claim 1 on the organic underlayer film and firing the composition; a process of forming a resist film by applying a resist film forming composition on the silicon-containing resist underlayer film; a process of obtaining a resist pattern by exposing and developing the resist film; a process of etching the silicon-containing resist underlayer film using a resist pattern as a mask; and a process of etching the organic underlayer film using the patterned silicon-containing resist underlayer film as a mask.

10 . The pattern forming method according to claim 9 , further comprising: a process of removing a sil

Assignees

• Nissan Chemical Corp

Inventors

• Shigaki Shuhei
• Saijo Taiki
• Shibayama Wataru

Classifications

• H10P50/286

  of organic materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/091

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title