Acoustic wave filter device

Patent metadata

Field	Value
Publication number	US-2024364307-A1
Application number	US-202418766887-A
Country	US
Kind code	A1
Filing date	Jul 9, 2024
Priority date	Feb 22, 2022
Publication date	Oct 31, 2024
Grant date	—

Abstract

A duplexer includes a piezoelectric substrate including an upper surface and a lower surface, a functional element on the lower surface, a flat plate electrode on a side of the upper surface of the piezoelectric substrate, and a dielectric portion that is located between the functional element and the flat plate electrode and has a permittivity lower than a permittivity of the piezoelectric substrate.

First claim

What is claimed is:

1 . An acoustic wave filter device comprising:
a first piezoelectric substrate including a first principal surface and a second principal surface; a first functional element provided on the first principal surface; a first electrode provided on a second principal surface side of the first piezoelectric substrate; and a dielectric portion provided between the first functional element and the first electrode and having a permittivity lower than a permittivity of the first piezoelectric substrate.

2 . The acoustic wave filter device according to claim 1 , further comprising:
a coupling electrode provided in a through hole penetrating the first piezoelectric substrate and electrically coupled to the first electrode; wherein the dielectric portion extends around the coupling electrode in the through hole.

3 . The acoustic wave filter device according to claim 2 , wherein the coupling electrode is provided in the through hole at a position spaced away from the first functional element relative to a center of the through hole in a direction extending away from the through hole.

4 . The acoustic wave filter device according to claim 1 , further comprising:
a second electrode provided at the first principal surface and electrically coupled to the first electrode; wherein the dielectric portion is provided on the first principal surface and between the first functional element and the second electrode.

5 . The acoustic wave filter device according to claim 1 , wherein the dielectric portion is provided between the first electrode and the second principal surface.

6 . The acoustic wave filter device according to claim 1 , wherein
the first piezoelectric substrate includes:
a support substrate defining the second principal surface, and
a piezoelectric layer defining the first principal surface.

7 . The acoustic wave filter device according to claim 6 , wherein the first piezoelectric substrate further includes an insulating layer provided between the support substrate and the piezoelectric layer.

8 . The acoustic wave filter device according to claim 7 , wherein
the support substrate is defined by a silicon substrate; the piezoelectric layer includes lithium tantalate or lithium niobate; and the insulating layer includes silicon oxide, silicon nitride, or a multilayer body including the silicon oxide and the silicon nitride.

9 . The acoustic wave filter device according to claim 1 , further comprising:
a second piezoelectric substrate opposed to the first principal surface; and a second functional element provided on a third principal surface of the second piezoelectric substrate opposed to the first principal surface; wherein the second functional element is electrically coupled to the first electrode.

10 . The acoustic wave filter device according to claim 9 , wherein
a first filter is defined by the first piezoelectric substrate and the first functional element; a second filter is defined the second piezoelectric substrate and the second functional element; and one of the first filter and the second filter is a transmission filter and another one of the first filter and the second filter is a reception filter.

11 . The acoustic wave filter device according to claim 9 , further comprising a shield electrode provided between the first functional element and the second functional element and covering at least one of the first functional element and the second functional element.

12 . The acoustic wave filter device according to claim 1 , further comprising:
a second functional element provided on the first principal surface; wherein the second functional element is electrically coupled to the first electrode.

13 . The acoustic wave filter device according to claim 12 , wherein
a first filter is defined by the first piezoelectric substrate and the first functional element; a second filter is defined by the second piezoelectric substrate and the second functional element; and one of the first filter and the second filter is a transmission filter and another one of the first filter and the second filter is a reception filter.

14 . The acoustic wave filter device according to claim 10 , wherein each of the first filter and the second filter includes at least one of a surface acoustic wave filter or a bulk acoustic wave filter.

15 . The acoustic wave filter device according to claim 4 , wherein each of the first and second electrodes includes comb-shaped interdigital transducer electrodes.

16 . The acoustic wave filter device according to claim 1 , wherein the first functional element includes at least one of aluminum, copper, silver, gold, titanium, tungsten, platinum, chromium, or molybdenum, or an alloy including aluminum, copper, silver, gold, titanium, tungsten, platinum, chromium, or molybdenum.

17 . The acoustic wave filter device according to claim 12 , wherein the second functional element includes comb-shaped interdigital transducer electrodes.

18 . The acoustic wave filter device according to claim 1 , wherein the second functional element includes at least one of aluminum, copper, silver, gold, titanium, tungsten, platinum, chromium, or molybdenum, or an alloy including aluminum, copper, silver, gold, titanium, tungsten, platinum, chromium, or molybdenum.

19 . The acoustic wave filter device according to claim 1 , wherein the dielectric portion includes polyimide, epoxy resin, cyclic olefin resin, benzocyclobutene, polybenzoxazole, phenol type resin, silicone, cycloolefin, and acrylic resin, or a silicon oxide film.

20 . The acoustic wave filter device according to claim 1 , wherein
the permittivity of the first piezoelectric substrate is in a range of about 30 to about 45; and the permittivity of the dielectric portion is in a range of about 2 to about 5.

Assignees

• Murata Manufacturing Co

Inventors

• Iwamoto Takashi
• Tsuda Motoji
• Somada Hiroshi
• Fujimori Eiji
• Kasai Masaki
• Kuroyanagi Takuma
• Takayanagi Shinichiro

Classifications

• H03H9/72

  Networks using surface acoustic waves · CPC title

• H03H9/145

  for networks using surface acoustic waves · CPC title

• H03H9/64

  using surface acoustic waves · CPC title

• H03H9/133

  for electromechanical delay lines or filters · CPC title

• H03H9/176

  consisting of ceramic material (H03H9/177, H03H9/178 take precedence) · CPC title