Semiconductor optical element, measurement device and light source device using semiconductor optical element, and method for manufacturing semiconductor optical element

Patent metadata

Field	Value
Publication number	US-2024363795-A1
Application number	US-202418644418-A
Country	US
Kind code	A1
Filing date	Apr 24, 2024
Priority date	Apr 28, 2023
Publication date	Oct 31, 2024
Grant date	—

Abstract

A semiconductor optical element includes a first indirect transition type semiconductor portion including a first conductivity type impurity at a first concentration, a second indirect transition type semiconductor portion including the first conductivity type impurity at a second concentration, a third indirect transition type semiconductor portion including a second conductivity type impurity at a third concentration, a fourth indirect transition type semiconductor portion including the second conductivity type impurity at a fourth concentration, and a fifth indirect transition type semiconductor portion including the second conductivity type impurity at a fifth concentration, in this order. The third indirect transition type semiconductor portion and the fourth indirect transition type semiconductor portion are in contact with each other. The first concentration is higher than the second concentration. The third concentration is higher than the fourth concentration. The fifth concentration is higher than the fourth concentration.

First claim

1 . A semiconductor optical element comprising, in a following order:
a first indirect transition type semiconductor portion including a first conductivity type impurity at a first concentration; a second indirect transition type semiconductor portion including the first conductivity type impurity at a second concentration; a third indirect transition type semiconductor portion including a second conductivity type impurity at a third concentration; a fourth indirect transition type semiconductor portion including the second conductivity type impurity at a fourth concentration; and a fifth indirect transition type semiconductor portion including the second conductivity type impurity at a fifth concentration, wherein: the third indirect transition type semiconductor portion and the fourth indirect transition type semiconductor portion are in contact with each other, the first concentration is higher than the second concentration, the third concentration is higher than the fourth concentration, and the fifth concentration is higher than the fourth concentration.

2 . The semiconductor optical element according to claim 1 , wherein a thickness of the third indirect transition type semiconductor portion is in a range from 10 nm to 1500 nm.

3 . The semiconductor optical element according to claim 1 , wherein the third concentration is in a range from 10 times to 1000 times the fourth concentration.

4 . The semiconductor optical element according to claim 2 , wherein the third concentration is in a range from 10 times to 1000 times the fourth concentration.

5 . The semiconductor optical element according to claim 1 , wherein:
the first conductivity type is n-type, the second conductivity type is p-type, and the first concentration is higher than the fifth concentration.

6 . The semiconductor optical element according to claim 1 , wherein the semiconductor optical element is configured to emit light with a peak wavelength in a range from 1100 nm to 4000 nm.

7 . The semiconductor optical element according to claim 2 , wherein the semiconductor optical element is configured to emit light with a peak wavelength in a range from 1100 nm to 4000 nm.

8 . The semiconductor optical element according to claim 3 , wherein the semiconductor optical element is configured to emit light with a peak wavelength in a range from 1100 nm to 4000 nm.

9 . The semiconductor optical element according to claim 1 , comprising:
a ridge in which at least a part of the fourth indirect transition type semiconductor portion and the fifth indirect transition type semiconductor portion are layered, wherein: the third indirect transition type semiconductor portion is located below the ridge.

10 . The semiconductor optical element according to claim 8 , comprising:
a ridge in which at least a part of the fourth indirect transition type semiconductor portion and the fifth indirect transition type semiconductor portion are layered, wherein: the third indirect transition type semiconductor portion is located below the ridge.

11 . The semiconductor optical element according to claim 9 , wherein a width of the ridge increases from a side where the fifth indirect transition type semiconductor portion is located toward the first indirect transition type semiconductor portion.

12 . The semiconductor optical element according to claim 1 , wherein:
a plurality of grooves or a plurality of voids are located at intervals in at least one of the first indirect transition type semiconductor portion or the second indirect transition type semiconductor portion, and the plurality of grooves or the plurality of voids are arranged in at least a first direction that is aligned with a resonance direction of the semiconductor optical element.

13 . The semiconductor optical element according to claim 9 , wherein:
a plurality of grooves or a plurality of voids are located at intervals in at least one of the first indirect transition type semiconductor portion or the second indirect transition type semiconductor portion, and the plurality of grooves or the plurality of voids are arranged in at least a first direction that is aligned with a resonance direction of the semiconductor optical element.

14 . The semiconductor optical element according to claim 1 , wherein:
the third indirect transition type semiconductor portion comprises a first region and a second region, the fourth indirect transition type semiconductor portion comprises a third region and a fourth region, the third indirect transition type semiconductor portion and the fourth indirect transition type semiconductor portion are in contact with each other at the first region and the third region, an atomic arrangement is more irregular in the first region than in the second region, and an atomic arrangement is more irregular in the third region than in the fourth region.

15 . The semiconductor optical element according to claim 13 , wherein:
the third indirect transition type semiconductor portion comprises a first region and a second region, the fourth indirect transition type semiconductor portion comprises a third region and a fourth region, the third indirect transition type semiconductor portion and the fourth indirect transition type semiconductor portion are in contact with each other at the first region and the third region, an atomic arrangement is more irregular in the first region than in the second region, and an atomic arrangement is more irregular in the third region than in the fourth region.

16 . A measurement device comprising:
the semiconductor optical element according to claim 1 ; and a light-receiving element configured to detect reflected light of light emitted from the semiconductor optical element.

17 . A light source device comprising:
a first mirror; a second mirror; and the semiconductor optical element according to claim 1 disposed between the first mirror and the second mirror.

18 . A method for manufacturing a semiconductor optical element, comprising:
preparing a first structure comprising:
a first indirect transition type semiconductor portion including a first conductivity type impurity at a first concentration,
a second indirect transition type semiconductor portion including the first conductivity type impurity at a second concentration lower than the first concentration, the second indirect transition type semiconductor portion being provided on the first indirect transition type semiconductor portion, and
a third indirect transition type semiconductor portion including a second conductivity type impurity at a third concentration, the third indirect transition type semiconductor portion being provided on the second indirect transition type semiconductor portion;
preparing a second structure comprising:
a fourth indirect transition type semiconductor portion including the second conductivity type impurity at a fourth concentration, and
a fifth indirect transition type semiconductor portion including the second conductivity type impurity at a fifth concentration, the fourth concentration being lower than the third concentration and the fifth concentration, wherein:
the fourth indirect transition type semiconductor portion is provided on the fifth indirect transition type semiconductor portion; and
directly bonding the third indirect transition type semiconductor portion and the fourth indirect transition type semiconductor portion with the third indirect transition type semiconductor portion of the first structure and the fourth indirect tran

Assignees

• Nichia Corp

Inventors

• Sano Masahiko

Classifications

• H10H20/822

  Materials of the light-emitting regions · CPC title

• H10H20/042

  Superluminescent diodes · CPC title

• H10H20/8215 Primary

  characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping · CPC title

• G01S7/4814

  of transmitters alone · CPC title

• G01S7/4863

  Detector arrays, e.g. charge-transfer gates · CPC title