Method for manufacturing etching mask pattern, and resin composition for forming etching mask pattern

Patent metadata

Field	Value
Publication number	US-2024361686-A1
Application number	US-202418645208-A
Country	US
Kind code	A1
Filing date	Apr 24, 2024
Priority date	Apr 27, 2023
Publication date	Oct 31, 2024
Grant date	—

Abstract

A manufacturing method including applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer and having a film thickness of 25 nm or more, and phase-separating the layer. The resin composition contains a block copolymer having a first block and a second block, the first block is includes a constitutional unit having General Formula (b1), and the second block is a random copolymer of a constitutional unit of General Formula (b2m) and a constitutional unit of General Formula (b2g). In the formulas illustrated below, R1 is an alkyl group which may have an oxygen atom or a silicon atom; R2 is an alkyl group; R3 is an alkylene group; and x represents a molar ratio and is more than 0 and 0.10 or less

First claim

What is claimed is:

1 . A method for manufacturing an etching mask pattern, comprising:
applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer and having a film thickness of 25 nm or more; and phase-separating the layer containing the block copolymer, wherein the resin composition for forming an etching mask pattern contains a block copolymer having a first block and a second block, the first block comprises a polymer consisting of a repeating structure of a constitutional unit represented by General Formula (b1), the second block is comprises a random copolymer consisting of a structure in which a constitutional unit represented by General Formula (b2m) and a constitutional unit represented by General Formula (b2g) are arranged in a disordered manner, and a proportion of a volume of the first block to a total volume of the first block and the second block is 20% to 80% by volume,

wherein in Formula (b1), R 1 is an alkyl group which may have an oxygen atom or a silicon atom, n is an integer of 0 to 5, in a case where n is an integer of 2 or more, a plurality of R 1 's may be the same or different from each other, and R b1 is a hydrogen atom or a methyl group,
in Formula (b2g), R 2 is an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, a cyano group, an amino group, a hydroxy group, or a phosphoric acid group, and R 3 is a linear or branched alkylene group having 1 to 10 carbon atoms, which may have a hydroxy group,
in Formulae (b2g) and (b2m), R b2 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, a plurality of R b2 's may be the same or different from each other, and x represents a molar ratio and is more than 0 and 0.10 or less.

2 . A resin composition for forming an etching mask pattern, the resin composition comprising block copolymer having a first block and a second block,
wherein the first block comprises a polymer consisting of a repeating structure of a constitutional unit represented by General Formula (b1), the second block is comprises a random copolymer consisting of a structure in which a constitutional unit represented by General Formula (b2m) and a constitutional unit represented by General Formula (b2g) are arranged in a disordered manner, and a proportion of a volume of the first block to a total volume of the first block and the second block is 20% to 80% by volume,

wherein in Formula (b1), R 1 is an alkyl group which may have an oxygen atom or a silicon atom, n is an integer of 0 to 5, when n is an integer of 2 or more, a plurality of R 1 's may be the same or different from each other, and R b1 is a hydrogen atom or a methyl group,
in Formula (b2g), R 2 is an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, a cyano group, an amino group, a hydroxy group, or a phosphoric acid group, and R 3 is a linear or branched alkylene group having 1 to 10 carbon atoms, which may have a hydroxy group, and
in Formulae (b2g) and (b2m), R b2 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, a plurality of R b2 's may be the same or different from each other, and x represents a molar ratio and is more than 0 and 0.10 or less.

Assignees

• Tokyo Ohka Kogyo Co Ltd
• Tokyo Inst Tech

Inventors

• Seshimo Takehiro
• Dazai Takahiro
• Hayakawa Teruaki
• Maekawa Shinsuke
• Uehara Ryota

Classifications

• C08F8/34

  Introducing sulfur atoms or sulfur-containing groups · CPC title

• C08F297/02

  using a catalyst of the anionic type · CPC title

• C09D153/00

  Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G03F7/165

  Monolayers, e.g. Langmuir-Blodgett · CPC title