Resin composition for forming etching mask pattern, and method for manufacturing etching mask pattern

Patent metadata

Field	Value
Publication number	US-2024360267-A1
Application number	US-202418636069-A
Country	US
Kind code	A1
Filing date	Apr 15, 2024
Priority date	Apr 27, 2023
Publication date	Oct 31, 2024
Grant date	—

Abstract

A resin composition for forming an etching mask pattern, with which a phase-separated structure having a period (L0) of less than 20 nm and having excellent vertical orientation even when subjected to high-temperature annealing can be obtained; and a method for manufacturing an etching mask pattern. The method includes applying the resin composition onto a support to form a block copolymer layer having a film thickness of 25 nm or more and phase-separating the block copolymer layer. The resin composition contains a block copolymer having a first block and a second block, the first block includes a structure of General Formula (b1), and the second block consists of a block 2 M of a structure of General Formula (b2m) and a block 2 G of a structure of General Formula (b2g), and y/(y+z) is 0.01 or more and 0.11 or less; R 1 is an alkyl group, R 2 is an alkyl group; and R 3 is an alkylene group

First claim

What is claimed is:

1 . A method for manufacturing an etching mask pattern, comprising:
applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer and having a film thickness of 25 nm or more; and phase-separating the layer containing the block copolymer, wherein the resin composition for forming an etching mask pattern contains a block copolymer having a first block and a second block, the first block comprises a polymer consisting of a repeating structure of a constitutional unit represented by General Formula (b1), and the second block consists of a block 2 M which comprises a polymer consisting of a repeating structure of a constitutional unit represented by General Formula (b2m) and a block 2 G which comprises a polymer consisting of a repeating structure of a constitutional unit represented by General Formula (b2g),

wherein in Formula (b1), R 1 is an alkyl group which may have an oxygen atom or a silicon atom, n is an integer of 0 to 5, and R b1 is a hydrogen atom or a methyl group,
in Formula (b2g), R 2 is an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, an amino group, a cyano group, a hydroxy group, or a phosphoric acid group, and R 3 is a linear alkylene group having 1 to 10 carbon atoms or a branched alkylene group having 2 to 10 carbon atoms, each of which may have a hydroxy group,
and in Formulae (b2g) and (b2m), R b2 's are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, x, y, and z represent a molar ratio, x+y+z is 100 mol %, y/(y+z) is 0.01 or more and 0.11 or less, and x is 20 to 80 mol %.

2 . The method for manufacturing an etching mask pattern according to claim 1 , wherein the block copolymer is a polymer represented by General Formula (BCP1) or General Formula (BCP2):

Wherein in Formulae (BCP1) and (BCP2), R 1 is an alkyl group which may have an oxygen atom or a silicon atom, n is an integer of 0 to 5, and R b1 is a hydrogen atom or a methyl group,
in Formulae (BCP1) and (BCP2), R 2 is an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, an amino group, a cyano group, a hydroxy group, or a phosphoric acid group, and R 3 is a linear alkylene group having 1 to 10 carbon atoms or a branched alkylene group having 2 to 10 carbon atoms, each of which may have a hydroxy group, and
in Formulae (BCP1) and (BCP2), R b2 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, x, y, and z represent a molar ratio, x+y+z is 100 mol %, y/(y+z) is 0.01 or more and 0.11 or less, and x is 20 to 80 mol %.

3 . The method for manufacturing an etching mask pattern according to claim 1 , wherein a number-average molecular weight of the block copolymer is 15,000 to 35,000.

4 . A resin composition for forming an etching mask pattern, comprising a block copolymer having a first block and a second block,
wherein the first block comprises a polymer consisting of a repeating structure of a constitutional unit represented by General Formula (b1), and the second block consists of a block 2 M which comprises a polymer consisting of a repeating structure of a constitutional unit represented by General Formula (b2m) and a block 2 G which comprises a polymer consisting of a repeating structure of a constitutional unit represented by General Formula (b2g),

wherein in Formula (b1), R 1 is an alkyl group which may have an oxygen atom or a silicon atom, n is an integer of 0 to 5, and R b1 is a hydrogen atom or a methyl group,
in Formula (b2g), R 2 is an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, an amino group, a cyano group, a hydroxy group, or a phosphoric acid group, and R 3 is a linear alkylene group having 1 to 10 carbon atoms or a branched alkylene group having 2 to 10 carbon atoms, each of which may have a hydroxy group, and
in Formulae (b2g) and (b2m), R b2 's are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, x, y, and z represent a molar ratio, x+y+z is 100 mol %, y/(y+z) is 0.01 or more and 0.11 or less, and x is 20 to 80 mol %.

5 . The resin composition for forming an etching mask pattern according to claim 4 , wherein the block copolymer is a polymer represented by General Formula (BCP1) or General Formula (BCP2):

Wherein in Formulae (BCP1) and (BCP2), R 1 is an alkyl group which may have an oxygen atom or a silicon atom, n is an integer of 0 to 5, and R b1 is a hydrogen atom or a methyl group,
in Formulae (BCP1) and (BCP2), R 2 is an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, an amino group, a cyano group, a hydroxy group, or a phosphoric acid group, and R 3 is a linear alkylene group having 1 to 10 carbon atoms or a branched alkylene group having 2 to 10 carbon atoms, each of which may have a hydroxy group,
and in Formulae (BCP1) and (BCP2), R b2 is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, x, y, and z represent a molar ratio, x+y+z is 100 mol %, y/(y+z) is 0.01 or more and 0.11 or less, and x is 20 to 80 mol %.

6 . The resin composition for forming an etching mask pattern according to claim 4 , wherein a number-average molecular weight of the block copolymer is 15,000 to 35,000.

Assignees

• Tokyo Ohka Kogyo Co Ltd
• Tokyo Inst Tech

Inventors

• Seshimo Takehiro
• Dazai Takahiro
• Hayakawa Teruaki
• Maekawa Shinsuke
• Uehara Ryota

Classifications

• C08F297/02

  using a catalyst of the anionic type · CPC title

• C08F8/34

  Introducing sulfur atoms or sulfur-containing groups · CPC title

• C09D153/00 Primary

  Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title