Multilayer electronic component

US2024339264A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2024339264-A1
Application numberUS-202318227563-A
CountryUS
Kind codeA1
Filing dateJul 28, 2023
Priority dateApr 7, 2023
Publication dateOct 10, 2024
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

A multilayer electronic component includes: a body including a dielectric layer including a plurality of dielectric grains and internal electrodes alternately disposed with the dielectric layer; and an external electrode disposed on the body and connected to the internal electrodes At least one of the plurality of dielectric grains includes Ba, Ti, Sn, and a rare earth element and has a core-dual shell structure, which includes a core, a first shell disposed on at least a portion of the core, and a second shell disposed on at least a portion of the first shell. When an average molar ratio of Sn to Ti included in the first and second shells is S1 and S2, respectively, and an average molar ratio of the rare earth element to Ti included in the first and second shells is R1 and R2, respectively, S1>S2 and R2>R1 are satisfied.

First claim

Opening claim text (preview).

What is claimed is: 1 . A multilayer electronic component, comprising: a body including a dielectric layer including a plurality of dielectric grains and internal electrodes alternately disposed with the dielectric layer; and an external electrode disposed on the body and connected to the internal electrodes, wherein at least one of the plurality of dielectric grains includes Ba, Ti, Sn, and a rare earth element and has a core-dual shell structure, the core-dual shell structure includes a core, a first shell disposed on at least a portion of the core, and a second shell disposed on at least a portion of the first shell, and when an average molar ratio of Sn to Ti included in the first and second shells is S 1 and S 2 , respectively, and an average molar ratio of the rare earth element to Ti included in the first and second shells is R1 and R2, respectively, S1>S2 and R2>R1 are satisfied. 2 . The multilayer electronic component of claim 1 , wherein the S1 and S2 satisfy 3<S1/S2≤10. 3 . The multilayer electronic component of claim 1 , wherein the R1 and R2 satisfy 4<R2/R1≤12. 4 . The multilayer electronic component of claim 2 , wherein the R1 and R2 satisfy 4<R2/R1≤12. 5 . The multilayer electronic component of claim 1 , wherein the S2 and R2 satisfy R2>S2. 6 . The multilayer electronic component of claim 1 , wherein a molar ratio of Sn to Ti included in the first shell gradually decreases toward at least one of a boundary with the core or a boundary with the second shell from an inside of the first shell. 7 . The multilayer electronic component of claim 1 , wherein the rare earth element is at least one of Dy, Tb, Y, Gd, or Ho. 8 . The multilayer electronic component of claim 1 , wherein the second shell further comprises at least one of Si, Al, Mn, V or Mg. 9 . The multilayer electronic component of claim 1 , wherein, in a cross-section of the core-dual shell structure, when a center of the core-dual shell structure is defined as α, and when a point, farthest from the α among surfaces of the second shell, is defined as β, a length corresponding to the core among straight lines connecting the α and β ranges from 70 nm to 100 nm. 10 . The multilayer electronic component of claim 1 , wherein, in a cross-section of the core-dual shell structure, when a center of the core-dual shell structure is defined as α, when a point, farthest from the α among surfaces of the second shell, is defined as β, and when a length corresponding to the first shell is LS 1 and a length corresponding to the second shell is LS 2 , among the straight lines connecting the α and β, LS 2 >LS 1 is satisfied. 11 . The multilayer electronic component of claim 10 , wherein the LS 1 is greater than 0 nm and less than 20 nm. 12 . The multilayer electronic component of claim 10 , wherein the LS 2 is 25 nm or more and 50 nm or less. 13 . The multilayer electronic component of claim 1 , wherein an average molar ratio of Sn to Ti included in the core is Sc and an average molar ratio of the rare earth element to Ti included in the core is Rc, S1>Sc and R2>Rc is satisfied. 14 . The multilayer electronic component of claim 1 , wherein an average thickness of the dielectric layer ranges from 0.6 μm to 2.0 μm. 15 . A multilayer electronic component, comprising: a body including a dielectric layer including a plurality of dielectric grains and internal electrodes alternately disposed with the dielectric layer; and an external electrode disposed on the body and connected to the internal electrodes, wherein at least one of the plurality of dielectric grains includes Ba, Ti, Sn, and a rare earth element and has a core-dual shell structure, wherein the core-dual shell structure includes a core, a first shell disposed on at least a portion of the core, and a second shell disposed on at least a portion of the first shell, wherein when an average molar ratio of Sn to Ti included in the core, the first shell, and the second shell is Sc, S 1 , and S 2 , respectively, and an average molar ratio of the rare earth element to Ti included in the core, the first shell, and the second shell is Rc, R1 and R2, respectively, S1>S2, S1>Sc, R2>S2, R2>Sc and R2>Rc are satisfied. 16 . The multilayer electronic component of claim 15 , wherein the S1 and S2 satisfy 3<S1/S2≤10. 17 . The multilayer electronic component of claim 15 , wherein the R1 and R2 satisfy 4<R2/R1≤12. 18 . The multilayer electronic component of claim 16 , wherein the R1 and R2 satisfy 4<R2/R1≤12. 19 . The multilayer electronic component of claim 15 , wherein a molar ratio of Sn to Ti included in the first shell gradually decreases toward at least one of a boundary with the core or a boundary with a second shell from an inside of the first shell.

Assignees

Inventors

Classifications

  • Alkaline earth titanates · CPC title

  • based on BaTiO3 perovskite phase · CPC title

  • H01G4/30Primary

    Stacked capacitors (H01G4/33 takes precedence) · CPC title

  • H01G4/1227Primary

    based on alkaline earth titanates · CPC title

  • Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide · CPC title

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What does patent US2024339264A1 cover?
A multilayer electronic component includes: a body including a dielectric layer including a plurality of dielectric grains and internal electrodes alternately disposed with the dielectric layer; and an external electrode disposed on the body and connected to the internal electrodes At least one of the plurality of dielectric grains includes Ba, Ti, Sn, and a rare earth element and has a core-du…
Who is the assignee on this patent?
Samsung Electro Mech
What technology area does this patent fall under?
Primary CPC classification H01G4/30. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Oct 10 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).