Light emitting element and production method therefor

Patent metadata

Field	Value
Publication number	US-2024322080-A1
Application number	US-202418608527-A
Country	US
Kind code	A1
Filing date	Mar 18, 2024
Priority date	Mar 24, 2023
Publication date	Sep 26, 2024
Grant date	—

Abstract

A method for producing a light emitting element, includes: stacking an n layer, a light emitting layer, and a p layer in this order, on a substrate; forming a hole having a depth reaching the n layer at a predetermined region of a surface of the p layer; forming, over the p layer, a p electrode having a Ru layer in contact with the p layer; forming an n electrode as defined herein; and performing a heat treatment as defined herein to reduce a contact resistance of the p electrode and the n electrode and to activate a p-type impurity in the p layer, and a pattern of the hole and a pattern of the p electrode are set such that a proportion of an area of the p electrode to a total area of the hole and the p layer is 70% or more.

First claim

What is claimed is:

1 . A method for producing a light emitting element which includes a group III nitride semiconductor containing Al and has an emission wavelength of 200 nm to 280 nm, comprising:
stacking an n layer, a light emitting layer, and a p layer in this order, over a substrate; forming a hole having a depth reaching the n layer at a predetermined region of a surface of the p layer; forming, over the player, a p electrode having a Ru layer in contact with the p layer; forming an n electrode over the n layer exposed on a bottom surface of the hole, the n electrode having a V layer that is in contact with the n layer, that has a thickness of 5 nm or more and 15 nm or less, and that comprises V or a metal containing V as a main component, and an Al layer that is on and in contact with the V layer and that comprises Al or a metal containing Al as a main component; and performing a heat treatment at a temperature of 500° C. to 650° C. for 1 to 10 minutes to reduce a contact resistance of the p electrode and the n electrode and to activate a p-type impurity in the p layer, wherein a pattern of the hole and a pattern of the p electrode are set such that a proportion of an area of the p electrode to a total area of the hole and the p layer is 70% or more.

2 . The method for producing a light emitting element according to claim 1 , wherein the hole is formed at plural locations, an arrangement pattern of the holes is a square lattice, an equilateral triangular lattice, or a honeycomb shape, and the n electrode is formed on a bottom surface of each of the holes.

3 . The method for producing a light emitting element according to claim 1 , further comprising:
forming a first pn electrode and a second pn electrode over the p electrode and over the n electrode, respectively, after the heat treatment; forming a protective film, which is an insulator, to cover an entire upper surface of the element; and providing holes at predetermined positions of the protective film, and forming, over the protective film, a p pad electrode that is connected to the first pn electrode via one of the holes provided at the predetermined positions of the protective film, and an n pad electrode that is connected to the second pn electrode via other of the holes provided at the predetermined positions of the protective film and is spaced apart from the p pad electrode.

4 . The method for producing a light emitting element according to claim 2 , further comprising:
forming a first pn electrode and a second pn electrode over the p electrode and over the n electrode, respectively, after the heat treatment; forming a protective film, which is an insulator, to cover an entire upper surface of the element; and providing holes at predetermined positions of the protective film, and forming, over the protective film, a p pad electrode that is connected to the first pn electrode via one of the holes provided at the predetermined positions of the protective film, and an n pad electrode that is connected to the second pn electrode via other of the holes provided at the predetermined positions of the protective film and is spaced apart from the p pad electrode.

5 . A light emitting element which comprises a group III nitride semiconductor containing Al and has an emission wavelength of 200 nm to 280 nm, the light emitting element comprising:
a substrate; a semiconductor layer, in which an n layer, a light emitting layer, and a p layer are stacked in this order over the substrate; a hole provided at a predetermined region of a surface of the p layer and having a depth reaching the n layer; a p electrode having a Ru layer provided on and in contact with the p layer; and an n electrode provided over the n layer exposed on a bottom surface of the hole, the n electrode having a first layer that is located in contact with the n layer, that comprises AlN x or Al y Ga 1-y N x having a higher Al composition than the n layer, and that has a thickness of 1 nm or more and 3 nm or less, and a second layer that is located on and in contact with the first layer, that comprises a metal mainly containing Al and containing V, and that has a thickness of 50 nm or more and 500 nm or less, wherein a pattern of the hole and a pattern of the p electrode are set such that a proportion of an area of the p electrode to a total area of the hole and the p layer is 70% or more.

6 . The light emitting element according to claim 5 , wherein the hole is formed at plural locations, an arrangement pattern of the holes is a lattice, and the n electrode is formed on a bottom surface of each of the holes.

7 . The light emitting element according to claim 5 , further comprising:
a first pn electrode and a second pn electrode provided over the p electrode and over the n electrode, respectively; a protective film which is an insulator and covers an entire upper surface of the element; a p pad electrode provided over the protective film and connected to the first pn electrode via a hole provided at the protective film; and an n pad electrode provided over the protective film, connected to the second pn electrode via a hole provided at the protective film, and spaced apart from the p pad electrode.

8 . The light emitting element according to claim 6 , further comprising:
a first pn electrode and a second pn electrode provided over the p electrode and over the n electrode, respectively; a protective film which is an insulator and covers an entire upper surface of the element; a p pad electrode provided over the protective film and connected to the first pn electrode via a hole provided at the protective film; and an n pad electrode provided over the protective film, connected to the second pn electrode via a hole provided at the protective film, and spaced apart from the p pad electrode.

Assignees

• Toyoda Gosei Kk

Inventors

• Mizutani Koichi
• Omoya Hideki
• Matsui Shinichi
• Makino Hiroaki

Classifications

• H10H20/0364

  of interconnections · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title