Film-forming material, film-forming slurry, spray coated film, and spray coated member

Patent metadata

Field	Value
Publication number	US-2024301540-A1
Application number	US-202118273086-A
Country	US
Kind code	A1
Filing date	Dec 22, 2021
Priority date	Jan 28, 2021
Publication date	Sep 12, 2024
Grant date	—

Abstract

The film is formed using one of two film-forming materials. The first film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; particles containing a crystal phase of a rare earth element oxide; and particles containing a crystal phase of a rare earth element ammonium fluoride double salt. The second film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; and particles containing a crystal phase of a rare earth element oxide and a crystal phase of a rare earth element ammonium fluoride double salt. If a spray coated film is to be formed by means of thermal spraying using this film-forming material or film-forming slurry in particular, it is possible to form a rare earth element oxyfluoride spray coated film without the need for excessive heat.

First claim

1 . A film-forming material comprising particles containing a crystal phase of a rare-earth fluoride, particles containing a crystal phase of a rare-earth oxide and particles containing a crystal phase of an ammonium rare-earth fluoride double salt.

2 . The film-forming material of claim 1 , wherein the particles containing a crystal phase of a rare-earth oxide and the particles containing a crystal phase of an ammonium rare-earth fluoride double salt form composite particles in which they are mutually dispersed.

3 . The film-forming material of claim 1 , wherein the particles containing a crystal phase of a rare-earth oxide are rare-earth oxide particles and the particles containing a crystal phase of an ammonium rare-earth fluoride double salt are ammonium rare-earth fluoride double salt particles.

4 . A film-forming material comprising particles containing a crystal phase of a rare-earth fluoride and particles containing a crystal phase of a rare-earth oxide and a crystal phase of an ammonium rare-earth fluoride double salt.

5 . The film-forming material of claim 4 , wherein the particles containing a crystal phase of a rare-earth oxide and a crystal phase of an ammonium rare-earth fluoride double salt form composite particles in which particles containing a crystal phase of a rare-earth oxide serve as a matrix and particles or a layer containing a crystal phase of an ammonium rare-earth fluoride double salt are dispersed at a surface and/or interior of the particles containing a crystal phase of a rare-earth oxide.

6 . The film-forming material of claim 4 , wherein the particles containing a crystal phase of a rare-earth oxide are rare-earth oxide particles, and the particles or layer containing a crystal phase of an ammonium rare-earth fluoride double salt are particles or a layer of an ammonium rare-earth fluoride double salt.

7 . The film-forming material of claim 1 , wherein the particles containing a crystal phase of a rare-earth fluoride are rare-earth fluoride particles.

8 . The film-forming material of claim 1 , wherein the material does not contain a crystal phase of a rare-earth oxyfluoride.

9 . The film-forming material of claim 1 , wherein the ammonium rare-earth fluoride double salt includes one or more selected from the group consisting of (NH 4 ) 3 R 3 F 6 , NH 4 R 3 F 4 , NH 4 R 3 2 F 7 and (NH 4 ) 3 R 3 2 F 9 (wherein each R 3 is one or more selected from rare-earth elements inclusive of Sc and Y).

10 . The film-forming material of claim 1 , wherein the material has an oxygen content of from 0.3 to 10 wt %.

11 . The film-forming material of claim 1 wherein, at crystal phase diffraction peaks detected within a diffraction angle range of 2θ=10 to 70° in x-ray diffraction using the CuKα line as the characteristic x-ray, X F0 computed from the formula

X

F
⁢
0

=

I
⁡
(
RNF
)

/

(

I
⁡
(
RF
)

+

I
⁡
(
RO
)

)

(wherein I(RNF) is the integrated intensity of the largest diffraction peak attributable to the ammonium rare-earth fluoride double salt, I(RF) is the integrated intensity of the largest diffraction peak attributable to the rare-earth fluoride, and I(RO) is the integrated intensity of the largest diffraction peak attributable to the rare-earth oxide) has a value of 0.01 or more.

12 . The film-forming material of claim 1 , wherein the particles containing a crystal phase of a rare-earth fluoride have an average particle size D50(F1), defined as the cumulative 50% size (median size) in the volume-based particle size distribution measured after mixing the particles in 30 mL of pure water and one minute of ultrasonic dispersion treatment at 40 W, of from 0.5 to 10 μm.

13 . The film-forming material of claim 1 wherein, in the particle size distribution of the particles containing a crystal phase of a rare-earth fluoride, the value of P D computed from the following formula

P
D

=

(

(

D
⁢
90
⁢

(

F
⁢
1

)

-

D
⁢
10
⁢

(

F
⁢
1

)

)

/
D
⁢
50
⁢

(

F
⁢
1

)

(wherein D90(F1) is the cumulative 90% size in the volume-based particle size distribution measured after mixing the particles in 30 mL of pure water and one minute of ultrasonic dispersion treatment at 40 W, D10(F1) is the cumulative 10% size in the volume-based particle size distribution measured after mixing the particles in 30 mL of pure water and one minute of ultrasonic dispersion treatment at 40 W, and D50(F1) is the cumulative 50% size (median size) in the volume-based particle size distribution measured after mixing the particles in 30 mL of pure water and one minute of ultrasonic dispersion treatment at 40 W) is 4 or less.

14 . The film-forming material of claim 1 , wherein the particles containing a crystal phase of a rare-earth fluoride have a BET specific surface area of 10 m 2 /g or less.

15 . The film-forming material of claim 1 , wherein the particles containing a crystal phase of a rare-earth fluoride has a loose bulk density of at least 0.6 g/cm3.

16 . The film-forming material claim 1 , wherein the material is in the form of a powder or granules.

17 . The film-forming material of claim 16 , wherein the material has an average particle size D50(S0), defined as the cumulative 50% size (median size) in a volume-based pa

Assignees

• Shinetsu Chemical Co

Inventors

• Iwasaki Ryo
• Kimura Yuji
• Nakamura Shigeyuki
• Nakano Hajime
• Maruko Kohei

Classifications

• C23C4/134

  Plasma spraying · CPC title

• C23C4/11 Primary

  Oxides · CPC title

• C01F17/265

  Fluorides · CPC title

• C01F17/224

  Oxides or hydroxides of lanthanides · CPC title

• C01F17/218

  Yttrium oxides or hydroxides · CPC title