Quantum dot, manufacturing method thereof, and light-emitting device, optical member, and apparatus including the quantum dot

Patent metadata

Field	Value
Publication number	US-2024301287-A1
Application number	US-202418584679-A
Country	US
Kind code	A1
Filing date	Feb 22, 2024
Priority date	Feb 28, 2023
Publication date	Sep 12, 2024
Grant date	—

Abstract

A quantum dot having a narrow full width at half maximum, a manufacturing method thereof, and a light-emitting device, an optical member, and an apparatus including the quantum dot are provided.

First claim

What is claimed is:

1 . A quantum dot comprising:
a core comprising a Group 1-III-VI compound; and a shell covering the core, wherein the shell comprises a Group II-VI compound or a Group III-VI compound, and, regarding the core and the shell, a molar ratio of a Group III element in the core to the Group III element in the shell is 0.2 to 0.6.

2 . The quantum dot of claim 1 , wherein the Group I-III-VI compound is represented by Formula 1:
M 1 a M 2 b M 3 c M 4 2 ,  Formula 1
wherein, in Formula 1, M 1 is a Group I metal element, M 2 and M 3 are each independently a Group III metal element, and M 4 is a Group VI element, a, b, and c are each independently 0 to 1, and a sum of b and c is from 0 to 1.

3 . The quantum dot of claim 2 , wherein a sum of a, b, and c is 2.

4 . The quantum dot of claim 2 , wherein M 1 is copper (Cu).

5 . The quantum dot of claim 2 , wherein M 2 is gallium (Ga), and M 3 is indium (In).

6 . The quantum dot of claim 2 , wherein M 4 is oxygen (O) or sulfur (S).

7 . The quantum dot of claim 2 , wherein b/c is from 0.05 to 20.

8 . The quantum dot of claim 1 , wherein the Group II-VI compound comprises at least one selected from among CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, and HgTe.

9 . The quantum dot of claim 1 , wherein the Group III-VI compound comprises at least one selected from among In 2 S 3 , In 2 Se 3 , Ga 2 S 3 , Ga 2 Se 3 , InGaS 3 , and InGaSe 3 .

10 . The quantum dot of claim 1 , wherein, regarding a sum of a Group I element and the Group III element in the core, a molar ratio of a Group II element or the Group III element in the shell to the sum of the Group I element and the Group III element in the core is from 1 to 10.

11 . The quantum dot of claim 1 , wherein a full width at half maximum of a photoluminescence peak is about 140 nanometer (nm) or less.

12 . The quantum dot of claim 1 , wherein the quantum dot is configured to emit blue light or green light.

13 . A method of manufacturing a quantum dot, the method comprising:
forming a first mixture comprising a first material comprising a Group I element, a second material comprising a Group III element, a third material comprising a Group III element, and a first ligand precursor; forming a second mixture by mixing the first mixture and a fourth material comprising a Group VI element; forming a third mixture comprising a core from the second mixture; forming a fourth mixture by mixing the third mixture and a second ligand precursor; forming a fifth mixture by adding a fifth material comprising a Group IV element and a sixth material comprising a Group III element to the fourth mixture or by adding a fifth material comprising a Group IV element and a seventh material comprising a Group II element to the fourth mixture; and forming a sixth mixture comprising a quantum dot comprising a core and a shell from the fifth mixture.

14 . The method of claim 13 , wherein the first material comprises copper (Cu).

15 . The method of claim 13 , wherein the method satisfies at least one of Conditions i) to iii):
i) the second material and the sixth material each comprise gallium (Ga); ii) the third material comprises indium (In); and iii) the fourth material and the fifth material each comprise sulfur (S).

16 . The method of claim 15 , wherein the fourth material comprises atomic S and a thiol-based compound.

17 . The method of claim 13 , wherein the method satisfies at least one of Conditions iv) and v):
iv) the first ligand precursor comprises at least one selected from among a primary amine, a secondary amine, a tertiary amine, and a phosphine oxide; and v) the second ligand precursor comprises a primary amine.

18 . The method of claim 13 , wherein the forming of the third mixture and the forming of the sixth mixture are each independently performed at about 240° C. to about 300° C.

19 . A light-emitting device comprising:
a first electrode; a second electrode facing the first electrode; and an emission layer between the first electrode and the second electrode, wherein the emission layer comprises the quantum dot of claim 1 .

20 . An apparatus comprising:
an optical member; and a light source, wherein, the optical member comprises at least one region that comprises the quantum dot of claim 1 , and the at least one region is configured to absorb light emitted from the light source.

Assignees

• Samsung Display Co Ltd

Inventors

• Yoon Bitna
• Kim Sungjae
• Kim Youngsik
• Park Seungwon
• Lee Donghee
• Jung Junehyuk

Classifications

• H10H20/8512

  Wavelength conversion materials · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• C09K11/565

  with zinc cadmium · CPC title