Gas barrier film and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-2024301213-A1
Application number	US-202418592596-A
Country	US
Kind code	A1
Filing date	Mar 1, 2024
Priority date	Mar 2, 2023
Publication date	Sep 12, 2024
Grant date	—

Abstract

The present invention relates to a method for manufacturing a gas barrier film, including at least steps 1 to 3 (each step is as defined in the specification) in this order;
a gas barrier film including: a substrate; and a polysilazane-based compound-derived layer on at least one surface side of the substrate, wherein the polysilazane-based compound-derived layer satisfies a specific requirement; and a gas barrier film including: a substrate; and a gas barrier layer laminate provided on at least one surface side of the substrate and including a gas barrier layer (XG) not adjacent to the substrate and a gas barrier layer (YG) located closer to the substrate than the layer (XG) and adjacent to the layer (XG), the gas barrier layers (XG) and (YG) being directly laminated, wherein the gas barrier layer laminate satisfies a specific requirement.

First claim

1 . A method for manufacturing a gas barrier film, the method comprising at least the following steps 1 to 3 in this order:
step 1: forming an unmodified polysilazane-based compound layer (Y); step 2: forming an unmodified polysilazane-based compound layer (X) on an exposed surface of the layer (Y) to directly laminate the layer (Y) and the layer (X); and step 3: forming a gas barrier layer laminate in which a gas barrier layer (XG) and a gas barrier layer (YG) are directly laminated by performing a modification treatment from a surface of the layer (X) on a side opposite to the layer (Y) to simultaneously perform the modification treatment on at least a part of the layer (X) and the layer (Y).

2 . The method for manufacturing a gas barrier film according to claim 1 , wherein the step 1 is the following step 11:
step 11: forming the unmodified polysilazane-based compound layer (Y) on at least one surface side of a substrate.

3 . The method for manufacturing a gas barrier film according to claim 1 , wherein, in the step 3, the modification treatment is performed on the entire layer (X) as well as on at least a part of the layer (Y) in a thickness direction of the layer (Y) from an interface between the layer (X) and the layer (Y) toward a surface of the layer (Y) opposite to the layer (X).

4 . The method for manufacturing a gas barrier film according to claim 1 , wherein a ratio [(Yt)/(Xt)] of a thickness (Yt) of the layer (Y) to a thickness (Xt) of the layer (X) is 1 or more.

5 . The method for manufacturing a gas barrier film according to claim 1 , wherein the gas barrier layer laminate has a thickness of from 25 to 10000 nm.

6 . A gas barrier film comprising: a substrate; and a polysilazane-based compound-derived layer on at least one surface side of the substrate, wherein the polysilazane-based compound-derived layer, when analyzed in a thickness direction from a surface thereof opposite to the substrate using X-ray photoelectron spectroscopy (XPS), shows a graph having a peak having at least one shoulder at a location different from a peak top, where a horizontal axis is a thickness of the polysilazane-based compound-derived layer, a value of a nitrogen element ratio (atom %), which is a content of nitrogen relative to a total content of silicon, oxygen, and nitrogen elements, obtained by analysis results of the XPS, is plotted on a vertical axis, and the graph is drawn based on plotted points.

7 . The gas barrier film according to claim 6 , wherein the shoulder is an inflection point.

8 . The gas barrier film according to claim 6 , wherein the shoulder is present within a range of ±50 nm from a position of the peak top.

9 . The gas barrier film according to claim 6 , wherein the shoulder is present on a rising side of the peak top.

10 . The gas barrier film according to claim 6 , wherein, in the polysilazane-based compound-derived layer, a region in which the nitrogen element ratio is 5 atom % or more has a thickness of from 5 to 10000 nm.

11 . A gas barrier film comprising: a substrate; and a gas barrier layer laminate provided on at least one surface side of the substrate and comprising a gas barrier layer (XG) not adjacent to the substrate and a gas barrier layer (YG) located closer to the substrate than the layer (XG) and adjacent to the layer (XG), the gas barrier layers (XG) and (YG) being directly laminated,
wherein the gas barrier layer laminate, when analyzed in a thickness direction from a surface thereof opposite to the substrate using X-ray photoelectron spectroscopy (XPS), shows a graph having a peak having at least one shoulder at a location different from a peak top, where a horizontal axis is a thickness of the gas barrier layer laminate, a value of a nitrogen element ratio (atom %), which is a content of nitrogen relative to a total content of silicon, oxygen, and nitrogen elements, obtained by analysis results of the XPS, is plotted on a vertical axis, and the graph is drawn based on plotted points.

Assignees

• Lintec Corp

Inventors

• SHINDO Nana
• Naganawa Satoshi

Classifications

• C08J2483/16

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• C08J2367/02

  Polyesters derived from dicarboxylic acids and dihydroxy compounds; (C08J2367/06 takes precedence) · CPC title

• B05D2518/10

  Silicon-containing polymers · CPC title

• C09D183/16

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• C08J7/123

  Treatment by wave energy or particle radiation (C08J7/18 takes precedence) · CPC title