Semiconductor device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-2024292605-A1
Application number	US-202318457337-A
Country	US
Kind code	A1
Filing date	Aug 29, 2023
Priority date	Feb 28, 2023
Publication date	Aug 29, 2024
Grant date	—

Abstract

The semiconductor device include a horizontal layer spaced apart from a lower structure to extend along a direction parallel to the lower structure; a first conductive line extending along a direction perpendicular to the lower structure and coupled to one end of the horizontal layer; a data storage element coupled to the other end of the horizontal layer; and a second conductive line extending along a direction across the horizontal layer, wherein the second conductive line comprises: a high work function electrode; and a low work function electrode having a cup shape laterally oriented and disposed adjacent to the first conductive line and having a lower work function than the high work function electrode.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a horizontal layer spaced apart from a lower structure to extend along a direction parallel to the lower structure; a first conductive line extending along a direction perpendicular to the lower structure and coupled to one end of the horizontal layer; a data storage element coupled to the other end of the horizontal layer; and a second conductive line extending along a direction across the horizontal layer, wherein the second conductive line comprises: a high work function electrode; and a low work function electrode having a cup shape laterally oriented and positioned adjacent to the first conductive line and having a lower work function than the high work function electrode.

2 . The semiconductor device of claim 1 , further comprising:
a covered barrier layer covering an upper surface, a lower surface, and one side surface of the high work function electrode; and a vertical barrier layer between the other side surface of the high work function electrode and the low work function electrode.

3 . The semiconductor device of claim 1 , wherein the low work function electrode includes an outer surface opposed to the high work function electrode and a bended inner surface opposed to the first conductive line.

4 . The semiconductor device of claim 3 , further comprising:
a gap-fill material disposed on the inner surface of the low work function electrode.

5 . The semiconductor device of claim 1 , further comprising:
a gap-fill material disposed on an inner surface of the low work function electrode.

6 . The semiconductor device of claim 1 , wherein the low work function electrode includes N-type dopant doped polysilicon.

7 . The semiconductor device of claim 1 , wherein the high work function electrode includes metal, metal nitride, or a combination thereof.

8 . The semiconductor device of claim 1 , wherein the horizontal layer includes a single crystal semiconductor material, a polycrystalline semiconductor material, or an oxide semiconductor material.

9 . The semiconductor device of claim 1 , wherein the horizontal layer comprises:
a first doped region coupled to the first conductive line; a second doped region coupled to the data storage element; and a channel between the first doped region and the second doped region.

10 . The semiconductor device of claim 1 , wherein the second conductive line includes a double structure and opposed to each other with the horizontal layer interposed therebetween.

11 . The semiconductor device of claim 1 , wherein the data storage element includes a capacitor, and the capacitor includes a cylindrical first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode.

12 . The semiconductor device of claim 1 , further comprising:
a gate dielectric layer fully covering each of an upper surface and a lower surface of the horizontal layer.

13 . The semiconductor device of claim 1 , further comprising:
an additional low work function electrode adjacent to the data storage element and having a lower work function than the high work function electrode.

Assignees

• Sk Hynix Inc

Inventors

• Kim Il Do
• Yeo Seung Mi
• Kim Seung Bum

Classifications

• H10W20/43

  Layouts of interconnections · CPC title

• H10D64/00

  Electrodes of devices having potential barriers · CPC title

• H10D88/00 Primary

  Three-dimensional [3D] integrated devices · CPC title

• H10B99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10B12/03

  Making the capacitor or connections thereto · CPC title