Rf band power supply device and pulse width modulation control method

Patent metadata

Field	Value
Publication number	US-2024291399-A1
Application number	US-202218574573-A
Country	US
Kind code	A1
Filing date	Jun 21, 2022
Priority date	Aug 31, 2021
Publication date	Aug 29, 2024
Grant date	—

Abstract

A pulse width modulation control according to the present invention is performed such that, when changing a modulation rate of a modulation wave, the modulation rate is continuously changed from a normal modulation region to an overmodulation region, and, the modulation rate is controlled not to be discontinuous between the normal modulation region and the overmodulation region. In the overmodulation region, limiting the modulation rate α prevents a jump phenomenon in pulse width from occurring and the continuity of the pulse width from disappearing due to the jump phenomenon. The upper limit α upper of the modulation rate α is a threshold at which the pulse width of a PWM pulse signal jumps to a duty ratio of 50%, and limits the modulation rate α to less than the threshold.

First claim

1 . An RF band power supply device, comprising:
a DC power source; a single-phase PWM inverter that converts a direct current supplied from the DC power source into an alternate current; a low-pass filter circuit that removes a harmonic component included in an AC output from the single-phase PWM inverter to thereby output a sine wave; and an inverter controller that performs pulse width modulation on the single-phase PWM inverter, wherein the inverter controller comprises a PWM control unit that generates a PWM pulse signal to be used for the pulse width modulation by comparing a sine wave modulation signal with a triangular wave carrier signal, and a modulation signal/carrier signal generation unit that generates the modulation signal and the carrier signal, wherein the modulation signal/carrier signal generation unit comprises a modulation control unit that controls a modulation factor of the modulation signal, the modulation control unit being configured to: (a) define a modulation factor in an overmodulation region to be less than a threshold value at which a pulse width of the PWM pulse signal jumps to a pulse width with a duty ratio of 50%, so as to limit an upper limit of the modulation factor, thereby maintaining continuity of the pulse widths of the PWM pulse signal, and (b) make the modulation factor to possess the continuity from a normal modulation region to the overmodulation region so as to make the modulation wave of the modulation signal to be a sine wave that is continuous from the normal modulation region to the overmodulation region.

2 . The RF band power supply device according to claim 1 , wherein the modulation control unit comprises a modulation factor upper limit setting unit, and a modulation signal generation unit that sets a modulation factor within a range of a modulation factor that has an upper limit value of a modulation factor set by the modulation factor upper limit setting unit as an upper limit to thereby generate a modulation signal.

3 . The RF band power supply device according to claim 1 , wherein a modulation wave comes into contact at a contact point with a peak of a carrier wave at an edge of an inner circumference of one period of the modulation wave, and at the contact point a threshold value of a modulation factor remaining in a normal modulation state is defined as an upper limit value of the modulation factor.

4 . The RF band power supply device according to claim 1 , wherein when a number of pulses is N, the threshold value of the modulation factor is 1/sin(π/2N) that is defined as the upper limit value of the modulation factor.

5 . The RF band power supply device according to claim 1 , wherein a modulation wave comes into contact at a contact point with a peak of a carrier wave, and at the contact point a threshold value of a modulation factor remaining in an overmodulation state is defined as an overmodulation lower limit value of the modulation factor.

6 . The RF band power supply device according to claim 1 , wherein when a number of pulses is N, a modulation factor at a boundary between the overmodulation region and the normal modulation region is 1/sin[2π{INT(N/4)+1/4}/N] that is defined as an overmodulation lower limit value of the modulation factor.

7 . The RF band power supply device according to claim 1 , wherein the modulation signal/carrier signal generation unit comprises a modulation control unit and a carrier signal generation unit, wherein
the modulation control unit comprises a modulation signal generation unit that generates a modulation wave α·sin(2π·fs·t) of a sine wave based on a modulation wave frequency fs and a modulation factor α controlled by the modulation control unit, and the carrier signal generation unit generates a triangular wave with a carrier frequency fc=N·fs based on the modulation wave frequency fs and the number of pulses N.

8 . A pulse width modulation control method for a single-phase PWM inverter that performs pulse width modulation control on the single-phase PWM inverter by using a gate signal as a PWM pulse signal, the gate signal being generated based on a comparison between two modulation waves having opposite phases in an RF band and a carrier wave, and outputs a sine wave in the RF band,
wherein a modulation wave of the modulation signal is a sine wave and a carrier wave of the carrier signal is a triangular wave, the modulation signal being modulated from a normal modulation region to an overmodulation region to: (a) define a modulation factor in an overmodulation region to be less than a threshold value at which a pulse width of the PWM pulse signal jumps to a pulse width with a duty ratio of 50%, so as to impose an upper limit of the modulation factor, thereby maintaining continuity of the pulse widths of the PWM pulse signal, and (b) make the modulation factor to possess the continuity from a normal modulation region to the overmodulation region so as to make the modulation wave of the modulation signal to be a sine wave that is continuous from the normal modulation region to the overmodulation region.

9 . The pulse width modulation control method according to claim 8 , wherein a modulation wave comes into contact at a contact point with a peak of a carrier wave at an edge of an inner circumference of one period of the modulation wave, and at the contact point a threshold value of a modulation factor remaining in a normal modulation state is defined as an upper limit value of the modulation factor.

10 . The pulse width modulation control method according to claim 8 , wherein when a number of pulses is N, the threshold value of the modulation factor is 1/sin(π/2N) that is defined as the upper limit value of the modulation factor.

11 . The pulse width modulation control method according to claim 8 , wherein the modulation wave comes into contact at a contact point with the peak of the carrier wave, and at the contact point a threshold value of a modulation factor remaining in an overmodulation state is defined as an overmodulation lower limit value of the modulation factor.

12 . The pulse width modulation control method according to claim 8 , wherein when a number of pulses is N, a modulation factor at a boundary between the overmodulation region and the normal modulation region is 1/sin[2π{INT(N/4)+1/4}/N] that is defined as the overmodulation lower limit value of the modulation factor.

13 . The pulse width modulation control method according to claim 8 , wherein a modulation wave α·sin(2π·fs·t) of a sine wave is generated based on a modulation wave frequency fs and a modulation factor α, and
a triangular wave with a carrier frequency fc=N·fs is generated based on the modulation wave frequency fs and the number of pulses N.

Assignees

• Kyosan Electric Mfg

Inventors

• Yuzurihara Itsuo
• Yoneyama Tomohiro
• Kobayashi Shohei
• Hosoyamada Yu

Classifications

• H02M1/0054

  Transistor switching losses (periodically suspending operation of switching converter in low power mode H02M1/0035) · CPC title

• H02M7/48 Primary

  using discharge tubes with control electrode or semiconductor devices with control electrode · CPC title

• H02M7/5387 Primary

  in a bridge configuration · CPC title

• H02M7/5395 Primary

  by pulse-width modulation · CPC title