US2024287384A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2024287384-A1 |
| Application number | US-202418583264-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 21, 2024 |
| Priority date | Jun 3, 2019 |
| Publication date | Aug 29, 2024 |
| Grant date | — |
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The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing tantalum nitride (TaN) from a semiconductor substrate.
Opening claim text (preview).
1 . An etching composition, comprising: 1) an oxidizing agent; 2) a hydroxylcarboxylic acid comprising at least two carboxyl groups; 3) an anionic surfactant; and 4) water; wherein the composition is free of an abrasive and has a pH of from about 7 to about 10. 2 . The composition of claim 1 , wherein the composition has a pH from about 7 to about 9.5. 3 . The composition of claim 1 , wherein the oxidizing agent comprises a peroxide, a persulfonic acid or a salt thereof, ozone, a peroxycarboxylic acid or a salt thereof, a perphosphoric acid or a salt thereof, a persulfuric acid or a salt thereof, a perchloric acid or a salt thereof, or a periodic acid or a salt thereof. 4 .- 7 . (canceled) 8 . The composition of claim 1 , wherein the anionic surfactant is an alkyl ethoxylated carboxylic acid or a salt thereof. 9 .- 11 . (canceled) 12 . The composition of claim 1 , further comprising a metal corrosion inhibitor. 13 . The composition of claim 12 , wherein the metal corrosion inhibitor comprises an azole or a salt thereof. 14 .- 15 . (canceled) 16 . The composition of claim 1 , further comprising a chelating agent. 17 . The composition of claim 16 , wherein the chelating agent is a phosphonic acid or a salt thereof. 18 . (canceled) 19 . The composition of claim 16 , wherein the chelating agent comprises a polyaminopolycarboxylic acid. 20 .- 21 . (canceled) 22 . The composition of claim 1 , further comprising a pH adjusting agent. 23 . The composition of claim 22 , wherein the pH adjusting agent comprises a base or an acid. 24 . The composition of claim 23 , wherein the base is alkali hydroxide or ammonium hydroxide. 25 . (canceled) 26 . The composition of claim 1 , further comprising a quaternary ammonium salt. 27 .- 28 . (canceled) 29 . An etching composition, comprising: 1) an oxidizing agent; 2) a hydroxylcarboxylic acid comprising at least two carboxyl groups; and 3) water; wherein the composition is free of an abrasive and has a pH of from about 7 to about 10. 30 . A method, comprising: contacting a semiconductor substrate containing a TaN feature with a composition of claim 1 to remove at least a portion of the TaN feature. 31 . The method of claim 30 , further comprising rinsing the semiconductor substrate with a rinse solvent after the contacting step. 32 . The method of claim 31 , further comprising drying the semiconductor substrate after the rinsing step. 33 . The method of claim 30 , wherein the method does not substantially remove copper in the semiconductor substrate. 34 . An article formed by the method of claim 30 , wherein the article is a semiconductor device. 35 . The article of claim 34 , wherein the semiconductor device is an integrated circuit.
the processing being a delineation of conductive layers, e.g. by RIE · CPC title
by liquid etching only · CPC title
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Pretreated ingredients and ingredients covered by the main groups C08K3/00 - C08K7/00 · CPC title
containing heterocyclic ring with at least one nitrogen atom as ring member · CPC title
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