Light emitting element and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2024274755-A1
Application number	US-202418416183-A
Country	US
Kind code	A1
Filing date	Jan 18, 2024
Priority date	Feb 15, 2023
Publication date	Aug 15, 2024
Grant date	—

Abstract

A light emitting element having an emission wavelength of 200 nm or more and 280 nm or less and including a group-III nitride semiconductor, which includes a substrate, an antireflection film provided on a backside of the substrate, a semiconductor layer including an n-type layer, a light emitting layer, and a p-type layer; a hole provided in a predetermined region of a surface of the p-type layer, a first p-electrode provided on the p-type layer, a first n-electrode provided on the n-type layer, a second p-electrode provided on the first p-electrode, a second n-electrode provided on the first n-electrode, and a protective film covering an entire upper surface of the element. The protective film includes: a first protective film made of an insulating material and a second protective film made of an insulating material having an internal stress other than that of the insulating material of the first protective film.

First claim

What is claimed is:

1 . A light emitting element having an emission wavelength of 200 nm or more and 280 nm or less and including a group-III nitride semiconductor, the element comprising:
a substrate; an antireflection film provided on a backside of the substrate; a semiconductor layer including an n-type layer, a light emitting layer, and a p-type layer which are laminated on a surface of the substrate in this order; a hole provided in a predetermined region of a surface of the p-type layer, the hole having a depth reaching the n-type layer; a first p-electrode provided on the p-type layer in contact therewith; a first n-electrode provided on the n-type layer exposed at a bottom of the hole; a second p-electrode provided on the first p-electrode; a second n-electrode provided on the first n-electrode; and a protective film covering an entire upper surface of the element, the protective film being made of an insulating material, wherein the protective film includes:
a first protective film made of the insulating material and
a second protective film formed on the first protective film, the second protective film being made of the insulating material having an internal stress other than that of the insulating material of the first protective film.

2 . The light emitting element according to claim 1 , wherein the first protective film and the second protective film are made of different material.

3 . The light emitting element according to claim 2 , wherein the first protective film is made of SiO 2 , and the second p-electrode and the second n-electrode are respectively composed of a plurality of layers having an upmost layer formed of a Ta layer that is in contact with the first protective film.

4 . The light emitting element according to claim 1 , further comprising a reflection film between the first protective film and the second protective film, the reflection film being made of a material that reflects ultraviolet rays having the emission wavelength of the element.

5 . A method of manufacturing a light emitting element having an emission wavelength of 200 nm or more and 280 nm or less and including a group-III nitride semiconductor, comprising the steps of:
forming a semiconductor layer by laminating an n-type layer, a light emitting layer, and a p-type layer on a surface of a substrate in this order; forming a hole in a predetermined region of a surface of the p-type layer, the hole having a depth reaching the n-type layer; forming a first p-electrode on the p-type layer; forming a first n-electrode on the n-type layer exposed at a bottom of the hole; forming a second p-electrode and a second n-electrode respectively on the first p-electrode and the first n-electrode; forming a first protective film covering an entire upper surface of the element, the first protective film being made of an insulating material; and forming a second protective film on the first protective film, the second protective film being made of the same material as the first protective film, wherein the first protective film and the second protective film are formed in a different way to have different internal stresses.

6 . The method according to claim 5 , wherein the first protective film is formed by CVD, and the second protective film is formed by sputtering.

7 . The method according to claim 5 , further comprising the step of forming a reflection film made of a material that reflects ultraviolet rays having the emission wavelength of the element after the step of forming the first protective film and before the step of forming the second protective film.

Assignees

• Toyoda Gosei Kk

Inventors

• Matsui Shinichi
• Omoya Hideki
• Makino Hiroaki
• Mizutani Koichi

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/034

  of coatings · CPC title

• H10H20/0137 Primary

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/835

  Reflective materials · CPC title