Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods

Patent metadata

Field	Value
Publication number	US-2024274437-A1
Application number	US-202418644475-A
Country	US
Kind code	A1
Filing date	Apr 24, 2024
Priority date	Apr 16, 2020
Publication date	Aug 15, 2024
Grant date	—

Abstract

Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

First claim

What is claimed is:

1 . A method of forming a structure, the method comprising the steps of:
providing a substrate within a reaction chamber; forming a first layer comprising silicon and germanium overlying a surface of the substrate; and forming a second layer comprising silicon overlying the first layer, wherein, during the step of forming the first layer, a germanium precursor comprising a halogen is provided to the reaction chamber.

2 . The method of claim 1 , wherein the germanium precursor is selected from the group consisting of germanium halides or germanium chlorohydrides or germanium bromohydrides.

3 . The method of claim 1 , wherein the germanium precursor is selected from one or more of the group consisting of GeCl 4 or GeCl x H 4-x .

4 . The method of claim 1 , wherein two or more germanium precursors are provided to the reaction chamber during the step of forming the first layer.

5 . The method of claim 1 , wherein the step of forming the first layer comprises:
a first period comprising flowing the germanium precursor; a second period comprising flowing a second germanium precursor; and a third period comprising flowing the germanium precursor.

6 . The method of claim 5 , wherein the second precursor comprises a germane.

7 . The method of claim 1 , wherein two or more germanium precursors are flowed to the reaction chamber during a portion of the step of forming the first layer.

8 . A method of forming a structure, the method comprising the steps of:
providing a substrate within a reaction chamber; forming a first layer comprising silicon and germanium overlying a surface of the substrate within the reaction chamber; providing one or more precursors to the reaction chamber for a transition period; and after the transition period, forming a second layer comprising silicon overlying the first layer within the reaction chamber.

9 . The method of claim 8 , wherein at least one of the one or more precursors are flowed to the reaction chamber during the step of forming the first layer.

10 . The method of claim 9 , wherein a flowrate of the at least one of the one or more precursors is lower during the transition period relative to a flowrate of the at least one of the one or more precursors during the step of forming the first layer.

11 . The method of claim 8 , wherein a germanium precursor is not provided to the reaction chamber during the transition period.

12 . The method of claim 8 , wherein the one or more precursors comprise a silicon precursor.

13 . A device structure formed according to the method of claim 1 .

14 . The device structure of claim 13 , wherein the device structure comprises a nanowire.

15 . A reactor system comprising:
one or more reaction chambers; a gas injection system fluidly coupled to at least one of the one or more reaction chambers; a first gas source; a second gas source; a third gas source; an exhaust source; and a controller, wherein the controller is configured to control gas flow into the gas injection system to selectively form a layer comprising silicon and germanium overlying the substrate and layer comprising silicon overlying the layer comprising silicon and germanium according to the method of claim 1 .

Assignees

• Asm Ip Holding Bv

Inventors

• Kajbafvala Amir
• Margetis Joe
• Sun Xin
• Kohen David
• Pierreux Dieter

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title