Silicon carbide seed crystal

Patent metadata

Field	Value
Publication number	US-2024262084-A1
Application number	US-202418429457-A
Country	US
Kind code	A1
Filing date	Feb 1, 2024
Priority date	Feb 2, 2023
Publication date	Aug 8, 2024
Grant date	—

Abstract

A silicon carbide seed crystal includes a first silicon carbide substrate, a second silicon carbide substrate, a metal layer, and a first adhesion layer. The first silicon carbide substrate has a carbon surface and a silicon surface opposite to each other; the second silicon carbide substrate has a carbon surface and a silicon surface opposite to each other, in which the carbon surface of the second silicon carbide substrate is a surface utilized for crystal growth. The metal layer is disposed between the silicon surface of the second silicon carbide substrate and the silicon surface of the first silicon carbide substrate, and the first adhesion layer is disposed between the silicon surface of the first silicon carbide substrate and the metal layer, in which a material of the first adhesion layer has a property of easily forming silicide with silicon.

First claim

What is claimed is:

1 . A silicon carbide seed crystal, comprising:
a first silicon carbide substrate, having a carbon surface and a silicon surface opposite to each other; a second silicon carbide substrate, having a carbon surface and a silicon surface opposite to each other, wherein the carbon surface of the second silicon carbide substrate is a surface utilized for crystal growth; a metal layer, disposed between the silicon surface of the second silicon carbide substrate and the silicon surface of the first silicon carbide substrate; and a first adhesion layer, disposed between the silicon surface of the first silicon carbide substrate and the metal layer, wherein a material of the first adhesion layer has a property of easily forming silicide with silicon.

2 . The silicon carbide seed crystal as claimed in claim 1 , wherein the first adhesion layer is in direct contact with the silicon surface of the first silicon carbide substrate.

3 . The silicon carbide seed crystal as claimed in claim 1 , wherein the material of the first adhesion layer comprises titanium, tantalum, chromium, or a combination thereof.

4 . The silicon carbide seed crystal as claimed in claim 1 , further comprising a second adhesion layer disposed between the silicon surface of the second silicon carbide substrate and the metal layer, wherein a material of the second adhesion layer has a property of easily forming silicide with silicon.

5 . The silicon carbide seed crystal as claimed in claim 1 , wherein impurities of the second silicon carbide substrate are less than impurities of the first silicon carbide substrate.

6 . The silicon carbide seed crystal as claimed in claim 1 , wherein impurities of the second silicon carbide substrate are less than 1 ppm, a micropipe density (MPD) is less than 1 cm −2 , a basal plane dislocation (BPD) is less than 500 cm −2 , and a threading screw dislocation (TSD) is less than 100 cm −2 .

7 . The silicon carbide seed crystal as claimed in claim 1 , wherein a bow and a warp of the silicon carbide seed crystal are both less than 20 μm.

8 . The silicon carbide seed crystal as claimed in claim 1 , wherein a total thickness of the silicon carbide seed crystal is greater than 500 μm.

9 . The silicon carbide seed crystal as claimed in claim 1 , wherein a thickness of the metal layer is less than 100 nm.

10 . The silicon carbide seed crystal as claimed in claim 1 , wherein a material of the metal layer has a property of easily diffusing and reacting with silicon carbide.

11 . The silicon carbide seed crystal as claimed in claim 1 , wherein a material of the metal layer comprises silver, aluminum, gold, or a combination thereof.

12 . The silicon carbide seed crystal as claimed in claim 1 , further comprising an alloy layer formed between the metal layer and the second silicon carbide substrate after undergoing a high-temperature process, wherein the alloy layer comprises carbon, silicon, and metal.

13 . The silicon carbide seed crystal as claimed in claim 1 , wherein the metal layer is in direct contact with the silicon surface of the second silicon carbide substrate.

14 . The silicon carbide seed crystal as claimed in claim 1 , wherein a thickness of the first adhesion layer is less than 10 nm.

Assignees

• Globalwafers Co Ltd

Inventors

• Horng Ray-Hua
• Chuang Tsung-Po
• Ku Chai-Wei
• Shih Ying-Ru

Classifications

• C30B23/025

  characterised by the substrate · CPC title

• C30B29/36

  Carbides · CPC title

• B32B7/12 Primary

  using interposed adhesives or interposed materials with bonding properties · CPC title

• B32B2255/205

  Metallic coating · CPC title

• C04B2237/365

  Silicon carbide · CPC title