Transient voltage absorption element

Patent metadata

Field	Value
Publication number	US-2024250523-A1
Application number	US-202418624496-A
Country	US
Kind code	A1
Filing date	Apr 2, 2024
Priority date	Oct 4, 2021
Publication date	Jul 25, 2024
Grant date	—

Abstract

A transient voltage absorption element is provided that is connected to a signal line in series and to a shunt between the signal line and a reference potential. The transient voltage absorption element includes a base material, a first input and output terminal in the base material and connected to the signal line, a second input and output terminal in the base material and connected to the signal line, a reference potential connection terminal in the base material and connected to the reference potential, an internal signal line that is electrically connected between the first and second input and output terminals, and a surge absorption element connected between the internal signal line and the reference potential connection terminal. Magnitude of an impedance of a parasitic capacitance component, in a frequency band of a signal propagating through the internal signal line is smaller than a resistance component of the signal line.

First claim

1 . A transient voltage absorption element for being connected to a signal line in series and connected to a shunt between the signal line and a reference potential, the transient voltage absorption element comprising:
a base material; a first input and output terminal in the base material and connected to the signal line; a second input and output terminal in the base material and connected to the signal line; a reference potential connection terminal in the base material and connected to the reference potential; an internal signal line that electrically connects the first input and output terminal to the second input and output terminal; and a surge absorption element connected between the internal signal line and the reference potential connection terminal, wherein magnitude of an impedance of a parasitic capacitance component, in a frequency band of a signal propagating through the internal signal line, is smaller than a resistance component of the internal signal line.

2 . The transient voltage absorption element according to claim 1 , wherein the signal is generated between the first input and output terminal and the second input and output terminal.

3 . The transient voltage absorption element according to claim 1 , wherein the internal signal line is a wiring pattern of an electrical conductor having a predetermined resistance component in the base material.

4 . The transient voltage absorption element according to claim 3 , wherein the first input and output terminal is directly connected to the second input and output terminal.

5 . The transient voltage absorption element according to claim 4 , wherein the internal signal line is formed in one layer, and the parasitic capacitance component is generated on a plane by the wiring pattern.

6 . The transient voltage absorption element according to claim 5 , wherein the internal signal line comprises a meandering shape.

7 . The transient voltage absorption element according to claim 4 , wherein the parasitic capacitance component is generated between the internal signal line and at least one of the first input and output terminal and the second input and output terminal.

8 . The transient voltage absorption element according to claim 7 , wherein:
the base material further includes a dielectric layer, and the internal signal line is disposed at a position that faces at least one of the first input and output terminal and the second input and output terminal with the dielectric layer interposed therebetween.

9 . The transient voltage absorption element according to claim 4 , wherein
the base material further includes a dielectric layer, and two or more layers of the internal signal lines are disposed at positions with a dielectric film interposed therebetween.

10 . The transient voltage absorption element according to claim 9 , wherein the parasitic capacitance component is formed in a region with a dielectric interposed therebetween.

11 . The transient voltage absorption element according to claim 4 , wherein the resistance component and the parasitic capacitance component are generated between the first input and output terminal and the reference potential connection terminal, and between the second input and output terminal and the reference potential connection terminal, respectively.

12 . The transient voltage absorption element according to claim 11 , wherein the wiring pattern of the internal signal line has a symmetrical shape with a surge absorption element as a reference.

13 . The transient voltage absorption element according to claim 11 , wherein the first input and output terminal and the second input and output terminal are disposed at symmetrical positions with the reference potential connection terminal as a reference.

14 . A transient voltage absorption element comprising:
a base material; a first input and output terminal in the base material and configured to connect to a signal line connected in series to the transient voltage absorption element; a second input and output terminal in the base material and configured to connect to the signal line; a reference potential connection terminal in the base material and configured to connect to a reference potential; an internal signal line that electrically connects the first input and output terminal to the second input and output terminal; and a surge absorption element connected between the internal signal line and the reference potential connection terminal, wherein magnitude of an impedance of a parasitic capacitance component, in a frequency band of a signal propagating through the internal signal line, is smaller than a resistance component of the internal signal line.

15 . The transient voltage absorption element according to claim 14 , wherein the transient voltage absorption element is configured to connect to a shunt between the signal line and the reference potential.

16 . The transient voltage absorption element according to claim 14 , wherein the signal is generated between the first input and output terminal and the second input and output terminal.

17 . The transient voltage absorption element according to claim 14 , wherein the internal signal line is a wiring pattern of an electrical conductor having a predetermined resistance component in the base material.

18 . The transient voltage absorption element according to claim 17 , wherein the first input and output terminal is directly connected to the second input and output terminal.

19 . The transient voltage absorption element according to claim 18 ,
wherein the internal signal line is formed in one layer, and the parasitic capacitance component is generated on a plane by the wiring pattern, and wherein the internal signal line comprises a meandering shape.

20 . The transient voltage absorption element according to claim 19 , wherein:
the parasitic capacitance component is generated between the internal signal line and at least one of the first input and output terminal and the second input and output terminal, the base material further includes a dielectric layer, and the internal signal line is disposed at a position that faces at least one of the first input and output terminal and the second input and output terminal with the dielectric layer interposed therebetween.

Assignees

• Murata Manufacturing Co

Inventors

• Ohara Tatsuya

Classifications

• H10D84/00

  Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers · CPC title

• H02H9/005 Primary

  avoiding undesired transient conditions · CPC title

• H02H9/04 Primary

  responsive to excess voltage (lightning arrestors H01C7/12, H01C8/04, H01G9/18, H01T) · CPC title