Ferroelectric film, manufacturing method therefor, and electronic component

Patent metadata

Field	Value
Publication number	US-2024250145-A1
Application number	US-202418584171-A
Country	US
Kind code	A1
Filing date	Feb 22, 2024
Priority date	Sep 17, 2021
Publication date	Jul 25, 2024
Grant date	—

Abstract

A ferroelectric film that includes: hafnium oxide having a fluorite structure; a metal oxide having one or more elements selected from La, Ce and Bi; and less than 5 mol % of carbon, wherein the ferroelectric film is a polycrystalline body having an average particle size of less than 10 nm.

First claim

1 . A ferroelectric film comprising:
hafnium oxide having a fluorite structure; a metal oxide having one or more elements selected from La, Ce and Bi; and less than 5 mol % of carbon, wherein the ferroelectric film is a polycrystalline body having an average particle size of less than 10 nm.

2 . The ferroelectric film according to claim 1 , wherein an amount of the metal oxide contained in the ferroelectric film is 1 mol % to 15 mol %.

3 . The ferroelectric film according to claim 1 , wherein an amount of the carbon in the ferroelectric film is less than 2 mol %.

4 . An electronic component comprising:
the ferroelectric film of claim 1 ; and an electrode on a surface of the ferroelectric film.

5 . The electronic component according to claim 4 , wherein
the electrode is a first electrode on a first main surface of the ferroelectric film, and the electronic component further includes a second electrode on a second main surface of the ferroelectric film opposite the first main surface, and the first electrode, the ferroelectric film and the second electrode are arranged to form a capacitor.

6 . The electronic component according to claim 4 , wherein the ferroelectric film has a thickness of 60 nm.

7 . The electronic component according to claim 4 , wherein an amount of the metal oxide contained in the ferroelectric film is 1 mol % to 15 mol %.

8 . The electronic component according to claim 4 , wherein an amount of the carbon in the ferroelectric film is less than 2 mol %.

9 . The electronic component according to claim 4 , wherein
the electrode is a gate electrode on a first main surface of the ferroelectric film, and the electronic component further includes a source electrode and a drain electrode, and the ferroelectric film, the gate electrode, the source electrode and the drain electrode are arranged to form a field-effect transistor where the ferroelectric film is a gate insulating film of the ferroelectric field-effect transistor.

10 . The electronic component according to claim 9 , wherein the ferroelectric film has a thickness of 60 nm.

11 . The electronic component according to claim 9 , further comprising a channel forming film between the ferroelectric film and the source electrode and the drain electrode.

12 . The electronic component according to claim 9 , wherein an amount of the metal oxide contained in the ferroelectric film is 1 mol % to 15 mol %.

13 . The electronic component according to claim 9 , wherein an amount of the carbon in the ferroelectric film is less than 2 mol %.

Assignees

• Murata Manufacturing Co
• Japan Advanced Institute Of Science And Tech

Inventors

• Yoneda Shingo
• Miyasako Takaaki
• Hosokura Tadasu
• Tokumitsu Eisuke

Classifications

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title

• H10P14/69397

  the material containing two or more metal elements · CPC title

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6342 Primary

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title