Light-emitting device and light-emitting apparatus

Patent metadata

Field	Value
Publication number	US-2024234633-A9
Application number	US-202318491036-A
Country	US
Kind code	A9
Filing date	Oct 20, 2023
Priority date	Oct 21, 2022
Publication date	Jul 11, 2024
Grant date	—

Abstract

A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1≥2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1≤1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.

First claim

What is claimed is:

1 . A light-emitting device, comprising:
an epitaxial structure having a first surface and a second surface that is opposite to the first surface, and, along a first direction from said first surface to said surface, including:
a first-type semiconductor layer,
an active layer, and
a second-type semiconductor layer including a capping layer that includes at least N1 number of sub-layers arranged in said first direction, where N1≥2, and that has an Al content which increases and then remains constant along said first direction, each of said sub-layers containing a material represented by Al y1 Ga 1-y1 InP, where 0<y1≤1.

2 . The light-emitting device according to claim 1 , wherein the Al content increases either gradually or stepwise along said first direction.

3 . The light-emitting device according to claim 1 , wherein in Al y1 Ga 1-y1 InP, 0.2<y1≤1.

4 . The light-emitting device according to claim 1 , wherein a last sub-layer of said sub-layers of said capping layer in said first direction contains AlInP.

5 . The light-emitting device according to claim 1 , wherein said second-type semiconductor layer further includes a spacer layer located between said active layer and said capping layer, said spacer layer containing a material represented by Al x1 Ga 1-x1 InP, where 0.2≤x1<1.

6 . The light-emitting device according to claim 5 , wherein in said second-type semiconductor layer, 0.2≤x1<y1≤1.

7 . The light-emitting device according to claim 5 , wherein said spacer layer includes at least M1 number of sub-layers, where M1≥2.

8 . The light-emitting device according to claim 5 , wherein said spacer layer has an Al content which increases gradually along said first direction.

9 . The light-emitting device according to claim 8 , wherein the Al content of said spacer layer increases either gradually or stepwise along said first direction.

10 . The light-emitting device according to claim 5 , wherein said spacer layer has a doping concentration that is lower than 1E17/cm 3 , and has a thickness less than 300 nm.

11 . The light-emitting device according to claim 1 , wherein said capping layer is doped with a p-type dopant with a doping concentration ranging from 2E17/cm 3 to 5E18/cm 3 .

12 . The light-emitting device according to claim 1 , wherein said capping layer is doped with an n-type dopant with a doping concentration ranging from 2E17/cm 3 to 5E18/cm 3 .

13 . The light-emitting device according to claim 1 , wherein said first-type semiconductor layer includes a spacer layer and a capping layer disposed along a second direction from said second surface to said first surface.

14 . The light-emitting device according to claim 13 , wherein said capping layer of said first-type semiconductor layer includes at least N2 number of sub-layers, where N2≥2, and has an Al content which increases and then remains constant along said second direction, each of said sub-layers of said capping layer of said first-type semiconductor layer containing a material represented by Al y2 Ga 1-y2 InP.

15 . The light-emitting device according to claim 14 , wherein a last sub-layer of said sub-layers of said capping layer of said first-type semiconductor layer in said second direction contains AlInP, and in said capping layer, 0.2<y2≤1.

16 . The light-emitting device according to claim 14 , wherein the Al content of said capping layer of said first-type semiconductor layer increases either gradually or stepwise along said second direction.

17 . The light-emitting device according to claim 13 , wherein said spacer layer of said first-type semiconductor layer contains a material represented by Al x2 Ga 1-x2 InP, where 0.2≤x2<1.

18 . The light-emitting device according to claim 13 , wherein said spacer layer of said first-type semiconductor layer includes at least M2 number of sub-layers, where M2≥2.

19 . The light-emitting device according to claim 17 , wherein said spacer layer of said first-type semiconductor layer has an Al content which increases either gradually or stepwise along said second direction.

20 . A light-emitting apparatus comprising the light-emitting device according to claim 1 .

Assignees

• Tianjin Sanan Optoelectronics Co Ltd

Inventors

• Li Weihuan
• Chen Jinghua
• Peng Yu-Ren
• Kuo Huan-Shao
• Chang Chia-Hung

Classifications

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/852

  Encapsulations · CPC title

• H10H20/811 Primary

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title

• H10H20/824 Primary

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title