Capacitor and semiconductor device including the same

Patent metadata

Field	Value
Publication number	US-2024213306-A1
Application number	US-202318363045-A
Country	US
Kind code	A1
Filing date	Aug 1, 2023
Priority date	Dec 27, 2022
Publication date	Jun 27, 2024
Grant date	—

Abstract

Provided are a capacitor and a semiconductor device including the same. The capacitor includes a first electrode, a dielectric layer over the first electrode, a second electrode between the first electrode and the dielectric layer, and a third electrode over the dielectric layer and in contact with the dielectric layer such that the dielectric layer is between the second electrode and the third electrode. A thermal expansion coefficient of the first electrode may be greater than a thermal expansion coefficient of the dielectric layer, and a work function of the second electrode may be higher than a work function of the first electrode.

First claim

What is claimed is:

1 . A capacitor comprising:
a first electrode; a dielectric layer over the first electrode; a second electrode between the first electrode and the dielectric layer; and a third electrode over the dielectric layer and in contact with the dielectric layer such that the dielectric layer is between the second electrode and the third electrode, wherein a thermal expansion coefficient of the first electrode is greater than a thermal expansion coefficient of the dielectric layer, and a work function of the second electrode is higher than a work function of the first electrode.

2 . The capacitor of claim 1 , wherein the thermal expansion coefficient of the first electrode is greater than or equal to 6.0×10 −6 /K and less than or equal to 8.0×10 −6 /K.

3 . The capacitor of claim 1 , wherein the work function of the second electrode is greater than or equal to 4.0 eV and less than or equal to 7.0 eV.

4 . The capacitor of claim 1 , wherein a thickness of the second electrode is less than or equal to a tenth ( 1/10) of a thickness of the first electrode.

5 . The capacitor of claim 1 , wherein a thickness of the first electrode is greater than or equal to 10 nm.

6 . The capacitor of claim 1 , wherein a thickness of the second electrode is less than or equal to 1 nm.

7 . The capacitor of claim 1 , wherein the dielectric layer comprises an oxide of at least one of hafnium (Hf), zirconium (Zr), titanium (Ti), barium (Ba), or strontium (Sr).

8 . The capacitor of claim 1 , wherein the first electrode comprises at least one of titanium (Ti), nickel (Ni), aluminum (Al), tantalum (Ta), molybdenum (Mo), vanadium (V), niobium (Nb), or magnesium (Mg).

9 . The capacitor of claim 8 , wherein the first electrode comprises at least one of a metal, an oxide, or a nitride.

10 . The capacitor of claim 1 , wherein the second electrode comprises at least one of tantalum (Ta), nickel (Ni), tungsten (W), platinum (Pt), palladium (Pd), gold (Au), iridium (Ir), or ruthenium (Ru).

11 . The capacitor of claim 10 , wherein the second electrode comprises at least one of a metal, an oxide, or a nitride.

12 . The capacitor of claim 1 , wherein the dielectric layer is tensile-strained in a thickness direction of the dielectric layer.

13 . The capacitor of claim 12 , wherein a magnitude of the tensile strain in the dielectric layer is based on a difference between the thermal expansion coefficient of the first electrode and the thermal expansion coefficient of the dielectric layer.

14 . The capacitor of claim 13 , wherein a phase of the dielectric layer is a tetragonal phase.

15 . The capacitor of claim 1 , wherein the first electrode is rod-shaped,
the second electrode surrounds the first electrode, the dielectric layer surrounds the second electrode, and the third electrode surrounds the dielectric layer.

16 . A semiconductor device comprising:
a transistor; and a capacitor electrically connected to the transistor, wherein the capacitor comprises:
a first electrode,
a dielectric layer on the first electrode,
a second electrode between the first electrode and the dielectric layer, and
a third electrode on the dielectric layer and in contact with the dielectric layer such that the dielectric layer is between the second electrode and the third electrode,
wherein a thermal expansion coefficient of the first electrode is greater than a thermal expansion coefficient of the dielectric layer, and a work function of the second electrode is higher than a work function of the first electrode.

17 . The semiconductor device of claim 16 , wherein the thermal expansion coefficient of the first electrode is greater than or equal to 6.0×10 −6 /K and less than or equal to 8.0×10 −6 /K.

18 . The semiconductor device of claim 16 , wherein the work function of the second electrode is greater than or equal to 4.0 eV and less than or equal to 7.0 eV.

19 . The semiconductor device of claim 16 , wherein a thickness of the second electrode is less than or equal to a tenth ( 1/10) of a thickness of the first electrode.

20 . The semiconductor device of claim 16 , wherein a magnitude of a tensile strain in the dielectric layer is based on a difference between the thermal expansion coefficient of the first electrode and the thermal expansion coefficient of the dielectric layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Sunghyun
• Kang Sungchan
• Kim Haeryong
• Song Jeonggyu
• Kim Cheheung
• Lee Jooho

Classifications

• H10D84/813

  Combinations of field-effect devices and capacitor only · CPC title

• H10D1/696 Primary

  comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688) · CPC title

• H10D1/694

  comprising noble metals or noble metal oxides · CPC title

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10B12/31

  having a storage electrode stacked over the transistor · CPC title