Display panel and display device

Patent metadata

Field	Value
Publication number	US-2024213256-A1
Application number	US-202318288968-A
Country	US
Kind code	A1
Filing date	Jun 29, 2023
Priority date	Dec 22, 2022
Publication date	Jun 27, 2024
Grant date	—

Abstract

A display panel and a display device. The display panel includes a power supply high-voltage signal line, a driving thin film transistor, and a light emitting element. The driving thin film transistor comprises an active layer. The active layer includes a source region, a drain region, and a channel region. The source region is connected to the power supply high-voltage signal line. The drain region is connected to the light emitting element. A part of the channel region close to the drain region has a lower majority carrier concentration than a part of the channel region close to the source region.

First claim

What is claimed is:

1 . A display panel, comprising a power supply high-voltage signal line, a driving thin film transistor, and a light emitting element, wherein the driving thin film transistor comprises an active layer that comprises a source region electrically connected to the power supply high-voltage signal line, a drain region electrically connected to the light emitting element, and a channel region disposed between the source region and the drain region;
wherein the channel region close to the drain region has a lower doping ion concentration than the channel region close to the source region.

2 . The display panel according to claim 1 , wherein the channel region comprises a first sub-channel region and a second sub-channel region, and the second sub-channel region is disposed between the first sub-channel region and the drain region;
wherein the second sub-channel region has a lower doping ion concentration than the first sub-channel region.

3 . The display panel according to claim 2 , wherein the first sub-channel region and the second sub-channel region have a same doping type.

4 . The display panel according to claim 2 , wherein a doping type of the first sub-channel region is different from a doping type of the second sub-channel region.

5 . The display panel according to claim 2 , wherein the first sub-channel region is N-type doped or P-type doped, and the second sub-channel region is undoped.

6 . The display panel according to claim 3 , wherein the doping type of the first sub-channel region is same as a doping type of the source region and the drain region, and a doping ion concentration of the first sub-channel region is less than a doping ion concentration of the source region and the drain region.

7 . The display panel according to claim 2 , wherein a length of the first sub-channel region is greater than or equal to a length of the second sub-channel region.

8 . The display panel according to claim 2 , wherein a width of the first sub-channel region is greater than or equal to a width of the second sub-channel region.

9 . The display panel according to claim 2 , wherein the channel region further comprises a third sub-channel region, and the third sub-channel region is disposed between the first sub-channel region and the second sub-channel region;
wherein the first sub-channel region, the second sub-channel region, and the third sub-channel region have a same doping type, a doping ion concentration of the first sub-channel region is greater than a doping ion concentration of the third sub-channel region, and the doping ion concentration of the third sub-channel region is greater than the doping ion concentration of the second sub-channel region.

10 . The display panel according to claim 2 , wherein the channel region further comprises a third sub-channel region, and the third sub-channel region is disposed between the first sub-channel region and the second sub-channel region;
wherein a doping type of the first sub-channel region is different from a doping type of the second sub-channel region, and a doping type of the first sub-channel region or the second sub-channel region is identical to a doping type of the third sub-channel region; or the third sub-channel region is undoped.

11 . The display panel according to claim 1 , further comprising a plurality of pixel driving circuits, each of the pixel driving circuits comprising a driving thin film transistor, a compensation thin film transistor, a switching thin film transistor, and a reset thin film transistor, wherein the driving thin film transistor and the switching thin film transistor are polysilicon thin film transistors, the reset thin film transistor and the compensation thin film transistor are polysilicon thin film transistors or oxide thin film transistors; and all channel regions of the active layers of the compensation thin film transistor, the switching thin film transistor, and the reset thin film transistor are undoped or have identical doping ion concentration.

12 . The display panel according to claim 11 , wherein the pixel driving circuit comprises a first switching thin film transistor, a second switching thin film transistor, a third switching thin film transistor, a compensation thin film transistor, a first reset thin film transistor, and a second reset thin film transistor;
wherein a source region of the driving thin film transistor, a first terminal of the first switching thin film transistor and a first terminal of the second switching thin film transistor are electrically connected to a first node; and a second terminal of the first switching thin film transistor is electrically connected to a data signal line, and a second terminal of the second switching thin film transistor is electrically connected to a power supply high-voltage signal line; a drain region of the driving thin film transistor, a first terminal of the compensation thin film transistor and a first terminal of the third switching thin film transistor are electrically connected to a second node; a gate of the driving thin film transistor, a second terminal of the compensation thin film transistor and a first terminal of the first reset thin film transistor are electrically connected to a third node, and a second terminal of the first reset thin film transistor is electrically connected to a first initialization signal line; and a second terminal of the third switching thin film transistor, a first terminal of the second reset thin film transistor and an anode of the light emitting element are electrically connected to a fourth node; and a gate of the second switching thin film transistor and a gate of the third switching thin film transistor are electrically connected to a light-emitting control signal line, and a second terminal of the second reset thin film transistor is electrically connected to a second initialization signal line.

13 . A display device comprising a display panel that comprises a power supply high-voltage signal line, a driving thin film transistor, and a light emitting element, wherein the driving thin film transistor comprises an active layer that comprises a source region electrically connected to the power supply high-voltage signal line, a drain region electrically connected to the light emitting element, and a channel region disposed between the source region and the drain region;
wherein the channel region close to the drain region has a lower doping ion concentration than the channel region close to the source region.

14 . The display device according to claim 13 , wherein the channel region comprises a first sub-channel region and a second sub-channel region, and the second sub-channel region is disposed between the first sub-channel region and the drain region;
wherein the second sub-channel region has a lower doping ion concentration than the first sub-channel region.

15 . The display device according to claim 14 , wherein the first sub-channel region and the second sub-channel region have a same doping type.

16 . The display device according to claim 14 , wherein a doping type of the first sub-channel region is different from a doping type of the second sub-channel region.

17 . The display device according to claim 14 , wherein the first sub-channel region is N-type doped or P-type doped, and the second sub-channel region is undoped.

18 . The display device according to claim 15 , wherein the doping type of the first sub-channel region is same as a doping type of the source region and the drain region, and a doping ion conce

Assignees

• Wuhan China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Wang Wei
• Huang Qing

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10D62/299

  having lateral doping variations (IGFETs having lightly doped source or drain extensions H10D30/601) · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/421 Primary

  having a particular composition, shape or crystalline structure of the active layer · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title