Photonic Integrated Beamlines for 3D Magneto-Optical Trap

US2024203616A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2024203616-A1
Application numberUS-202318542341-A
CountryUS
Kind codeA1
Filing dateDec 15, 2023
Priority dateDec 15, 2022
Publication dateJun 20, 2024
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A device may include an atomic cell with a first wall. A device may include a photonic integrated circuit positioned parallel to the atomic cell first wall, the photonic integrated circuit comprising: a set of three grating emitters mounted on the photonic integrated circuit around a circumference with a spacing of around 120 degrees, wherein each grating emitter is etched to emit free-space beams on to the first wall of the atomic cell at a selected angle, wherein the selected angle in combination with the circumference results in the set of free-space beams intersecting at a location inside the atomic cell.

First claim

Opening claim text (preview).

What is claimed is: 1 . A photonic integrated circuit with a beamline, the photonic integrated circuit comprising: at least one laser with a first optical frequency related to a first at least one atomic transition, the at least one laser pre-stabilized to a at least one frequency reference, wherein the at least one laser is locked to the at least one frequency reference; at least one photodiode and at least one feedback control circuit for locking the at least one laser to the at least one frequency reference; at least one frequency shifter or laser frequency control for stabilizing the at least one laser to the frequency reference, and wherein the pre-stabilized laser is then locked to the at least one atomic transition; and at least one output coupling grating for communicating the at least laser to a target. 2 . The photonic integrated circuit of claim 1 , wherein the target is selected from a list consisting of an at least one atom in an atomic cell, an at least one ion in an ion trap, and a molecule in a vacuum cell. 3 . The photonic integrated circuit of claim 1 , wherein the frequency reference is selected from the group consisting of an atomic frequency reference and an optical cavity frequency reference. 4 . The photonic integrated circuit of claim 1 , wherein the output coupling grating is used can be used to form a lattice trap. 5 . The photonic integrated circuit of claim 1 , wherein the output coupling grating is used to form an optical tweezer. 6 . The photonic integrated circuit of claim 1 , further comprising a second output coupling grating and a third output coupling grating, wherein the at least one laser is coupled to the three output coupling gratings, and wherein the three output coupling gratings are arranged to intersect at a common point inside an atomic cell. 7 . The photonic integrated circuit of claim 1 , wherein the at least one laser is modulated to be locked to the at least one frequency reference. 8 . The photonic integrated circuit of claim 1 , wherein the target is selected from the group consisting of a vapor cell, an ion trap, a vacuum cell, 1D MOT, a 2D MOT, and a 3D MOT. 9 . The photonic integrated circuit of claim 1 , wherein the laser frequency is matched to a transition selected from the group including virtual atomic transitions multi-photon transitions, direct transitions, and indirect transitions. 10 . The photonic integrated circuit of claim 1 , wherein the laser optical frequency is selected from a list consisting of Deep UV, UV, near UV, Visible, Near IR, Mid IR and IR wavelengths. 11 . The photonic integrated circuit of claim 1 , wherein the at least one laser, photodiode, frequency shifter, and output coupling grating are integrated to an integrated circuit using a material selected from a group consisting of silicon nitride, tantalum pentoxide, alumina nitride, and alumina oxide. 12 . The photonic integrated circuit of claim 1 , wherein a quarter waveplate is located directly above each output coupling grating. 13 . The photonic integrated circuit of claim 1 , wherein the at least one output coupling grating is configured to emit polarization selected from the group consisting of circular polarization, elliptical polarization and engineered degrees of polarization. 14 . The photonic integrated circuit of claim 1 , wherein the at least one output coupling grating is configured to emit intensity profiles selected from the group consisting of flat top, gaussian, and engineered intensity profiles. 15 . The photonic integrated circuit of claim 1 , wherein the photonic integrated circuit is CMOS foundry compatible Si3N4 waveguide circuit, and wherein during manufacturing a set of relative positions of the output coupling gratings are fixed. 16 . The photonic integrated circuit of claim 1 , further comprising a repump laser and a cooling laser, and wherein the repump laser and the cooling laser are locked to a second frequency reference and a third frequency reference respectively. 17 . The photonic integrated circuit of claim 16 , wherein the repump laser, cooling laser, and at least one laser are output from a common output coupling grating. 18 . A photonic integrated circuit forming part of an ion trap, the photonic integrated circuit comprising: at least one laser with an optical frequency matched to at least one atomic transition, the at least one laser pre-stabilized to the at least one atomic transition, wherein pre-stabilization of the laser to the at least one atomic transition uses at least one frequency reference, wherein the at least one laser is modulated for locking to the at least frequency reference, and wherein the at least one laser is modulated for locking to the at least one atomic transition; and at least one photodiode and at least one feedback control circuit for locking the at least one laser to the at least one frequency reference. 19 . A photonic integrated circuit forming part of a molecular trap, the photonic integrated circuit comprising: at least one laser with an optical frequency matched to at least one atomic transition, the at least one laser pre-stabilized to the at least one atomic transition, wherein pre-stabilization of the laser to the at least one atomic transition uses at least one frequency reference, wherein the at least one laser is modulated for locking to the at least frequency reference, and wherein the at least one laser is modulated for locking to the at least one atomic transition; at least one photodiode and at least one feedback control circuit for locking the at least one laser to the at least one frequency reference; and three output coupling gratings, wherein the three output coupling gratings are mounted on a photonic integrated circuit around a circumference with a spacing of around 120 degrees, and wherein each grating emitter is etched to emit free-space beams at a selected angle, wherein the selected angle results in a set of free-space beams intersecting at a location inside an atomic cell. 20 . The photonic integrated circuit of claim 19 , wherein the circumference and the selected angle are such that all the free-space beams from the three output coupling gratings enter the atomic cell through at least one wall of the atomic cell.

Assignees

Inventors

Classifications

  • G21K1/20Primary

    for confining charged particles or handling confined charged particles, e.g. ion traps · CPC title

  • G21K1/003Primary

    Physics · mapped topic

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What does patent US2024203616A1 cover?
A device may include an atomic cell with a first wall. A device may include a photonic integrated circuit positioned parallel to the atomic cell first wall, the photonic integrated circuit comprising: a set of three grating emitters mounted on the photonic integrated circuit around a circumference with a spacing of around 120 degrees, wherein each grating emitter is etched to emit free-space be…
Who is the assignee on this patent?
Univ California
What technology area does this patent fall under?
Primary CPC classification G21K1/20. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Jun 20 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).