Contour line analysis apparatus, processing dimension extraction system, processing condition decision system, semiconductor device manufacturing system, and data structure

US2024200938A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2024200938-A1
Application numberUS-202117908185-A
CountryUS
Kind codeA1
Filing dateJul 14, 2021
Priority dateJul 14, 2021
Publication dateJun 20, 2024
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

High-accuracy fitting for complex shapes that can occur in semiconductor processing is performed. A shape model is a curved line that is drawn with one stroke from its start point to its end point along a periphery of a figure that is a combination of one or more ellipses and one or more line segments in an xy-plane defined by an x axis and a y axis which are perpendicular to each other, and constraint conditions of a shape model are derived on the basis of a processing dimension function that represents processing dimensions specified on the basis of singular points in the shape model and that has shape model parameters as its variables, and definition ranges of the processing dimensions.

First claim

Opening claim text (preview).

1 . A contour line analysis apparatus for analyzing contour line data of a target structure detected from image data of a semiconductor sample obtained by a measurement apparatus using a charged particle beam device, the contour line analysis apparatus comprising: a fitting unit that fits a shape model to the contour line data and obtains shape model parameters of the shape model; a constraint condition setting unit that sets constraint conditions for the shape model parameters when the fitting unit fits the shape model to the contour line data; and a shape model database for storing likely shape model parameter values of the shape model obtained by the fitting unit's fitting the shape model to the contour line data under the constraint conditions set by the constraint condition setting unit, wherein the shape model is a curved line that is drawn with one stroke from its start point to its end point along a periphery of a figure that is a combination of one or more ellipses and one or more line segments in an xy-plane defined by an x axis and a y axis which are perpendicular to each other, and the constraint condition setting unit includes a function database that stores a processing dimension function that represents processing dimensions specified on the basis of singular points in the shape model and that has the shape model parameters as its variables, and a constraint condition derivation unit that derives the constraint conditions of the shape model parameters on the basis of definition ranges of the processing dimensions and the processing dimension function. 2 . The contour line analysis apparatus according to claim 1 , wherein the shape model parameters include: parameters related to shapes and dispositions of the one or more ellipses and one or more line segments that make up the figure; and parameters related to how to draw the curved line with one stroke. 3 . The contour line analysis apparatus according to claim 2 , wherein, if a depth direction of the target structure is set to be the x axis direction, coordinates of the singular points can be analytically derived from the shape model, and the singular points include indifferentiable points in differentiation of the shape model with respect to x, extremum points where differential coefficients of the shape model with respect to x are 0, and inflection points where second order differential coefficients of the shape model with respect to x change from positive to negative or vice versa. 4 . The contour line analysis apparatus according to claim 1 , wherein the shape model database stores the likely shape model parameter values and shape model hyperparameters of the shape model, and the shape model hyperparameters include the respective numbers of ellipses and line segments constituting the figure, and the order of dispositions from the start point to the end point of the figure. 5 . The contour line analysis apparatus according to claim 4 comprising a hyperparameter setting unit for setting the shape model hyperparameters of the shape model, wherein the hyperparameter setting unit includes a candidate model creation unit for creating a plurality of the shape models each of which has the different shape model hyperparameters as candidate models, and a model evaluation unit for evaluating the plurality of candidate models using a result obtained by the fitting unit's fitting the plurality of candidate models to the contour line data, the shape model parameter values obtained by fitting the candidate model evaluated by the model evaluation unit as the best shape model to the contour line data are stored in the shape model database as the likely shape model parameter values, and the model parameter evaluation unit evaluates the candidate model on the basis of a fitting error of the candidate model and the number of the shape model parameters of the candidate model. 6 . The contour line analysis apparatus according to claim 1 , comprising a preprocessing unit for performing preprocessing on the contour line data before the fitting unit executes fitting the shape model on the contour line data. 7 . The contour line analysis apparatus according to claim 1 , wherein the function database stores one or more processing dimension functions associated with processing dimension tags that prescribe a type of the processing dimensions for each of the shape models. 8 . A processing dimension extraction system that has the contour line analysis apparatus according to claim 1 and a processing dimension extraction apparatus and that extracts desired processing dimensions of the target structure, wherein the processing dimension extraction apparatus includes: a processing dimension calculation method setting unit that selects a processing dimension function that describes the desired processing dimensions of the target structure among the processing dimension functions stored in the function database as a likely processing dimension function; and a processing dimension calculation unit that calculates the desired processing dimensions of the target structure by substituting the likely shape model parameter values stored in the shape model database into the likely processing dimension function. 9 . The processing dimension extraction system according to claim 8 , wherein the function database stores a plurality of the processing dimension functions that are candidates for describing the desired processing dimensions of the target structure, and the processing dimension calculation unit includes a function specification unit that, at the time of extracting the desired processing dimensions of the target structure from each of a plurality of the image data, measures the desired processing dimensions from the contour line data of the target structure detected from at least one of the plurality of image data pieces, calculates output errors between the measured values of the desired processing dimensions and the values calculated by substituting the likely shape model parameter values stored in the shape model database into a plurality of the processing dimension functions that become the candidates, and specifies a processing dimension function having the least output error of the output errors as the likely processing dimension function. 10 . The processing dimension extraction system according to claim 9 , wherein the function database stores one or more processing dimension functions associated with processing dimension tags that prescribe types of the processing dimensions for each of the shape models, and the processing dimension calculation unit defines the one or more processing dimension functions associated with the predefined processing dimension tags as the plurality of the processing dimension functions that become the candidates. 11 . A processing condition decision system comprising the contour line analysis apparatus according to claim 1 and a processing condition decision apparatus that decides the processing conditions of a semiconductor processing apparatus, wherein the semiconductor sample is a semiconductor sample on which processing is performed by the semiconductor processing apparatus, the processing condition decision apparatus includes: a learning unit learns that a correlation model between the processing conditions of the semiconductor processing apparatus and likely shape model parameter values of contour line data of a target structure detected from image data of the semiconductor sample on which processing is performed by the semiconductor processing apparatus under the processing conditions; a target parameter value setting unit that sets target values of the shape model parameters; and a

Assignees

Inventors

Classifications

  • Testing or measuring during manufacture or treatment of wafers, substrates or devices · CPC title

  • Semiconductor; IC; Wafer · CPC title

  • Probabilistic image processing · CPC title

  • from scanning electron microscope · CPC title

  • using a design-rule based approach · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2024200938A1 cover?
High-accuracy fitting for complex shapes that can occur in semiconductor processing is performed. A shape model is a curved line that is drawn with one stroke from its start point to its end point along a periphery of a figure that is a combination of one or more ellipses and one or more line segments in an xy-plane defined by an x axis and a y axis which are perpendicular to each other, and co…
Who is the assignee on this patent?
Hitachi High Tech Corp
What technology area does this patent fall under?
Primary CPC classification G01B15/04. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Jun 20 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).