Vertically stacked mems devices and controller device

Patent metadata

Field	Value
Publication number	US-2024199411-A1
Application number	US-202218288063-A
Country	US
Kind code	A1
Filing date	Apr 29, 2022
Priority date	Apr 30, 2021
Publication date	Jun 20, 2024
Grant date	—

Abstract

Various arrangements for a microelectromechanical (MEMS) die and a controller die in vertically stacked structures are disclosed. The orientations of the MEMS die and the controller die vary in the various arrangements. In one embodiment, a backside surface of the MEMS die is operably connected to a frontside surface of the controller die. In another embodiment, a backside surface of the MEMS die is operably connected to a backside surface of the controller die. In another embodiment, a frontside surface of the MEMS die is operably connected to a backside surface of the controller die. In yet another embodiment, a frontside surface of the MEMS die is operably connected to a frontside surface of the controller die.

First claim

What is claimed is:

1 . A vertically stacked structure, comprising:
a microelectromechanical (MEMS) die operably connected to a controller die using a first electrical connector, wherein:
the controller die comprises controller circuitry formed in and over a first substrate, the controller circuitry operably connected to the first connector;
the MEMS die comprises MEMS circuitry formed in or over a second substrate, the MEMS circuitry operably connected to the first electrical connector; and
the first electrical connector is operable to transmit a control signal from the controller circuitry to the MEMS circuitry; and
a second electrical connector operably connected to the MEMS circuitry, the second electrical connector operable to transmit a radio frequency (RF) signal from the MEMS circuitry and out of the vertically stacked structure, wherein the RF signal is not routed through the first substrate of the controller die or the second substrate of the MEMS die.

2 . The vertically stacked structure of claim 1 , wherein:
the MEMS circuitry is at a frontside surface of the MEMS die; the first electrical connector is located at a backside surface of the MEMS die; and the MEMS circuitry is operably connected to the first connector through a through silicon via.

3 . The vertically stacked structure of claim 1 , further comprising an encapsulation layer formed over a backside surface of the controller die, sides of the controller die, and exposed portions of a bottom surface of the MEMS die.

4 . The vertically stacked structure of claim 3 , further comprising:
a dam structure surrounding a perimeter of a space between the MEMS die and the controller die, the dam structure forming a closed region that creates an air pocket region; and an encapsulation material around the perimeter of the space.

5 . The vertically stacked structure of claim 1 , wherein:
the MEMS circuitry comprises a MEMS RF switch that is formed in a MEMS cavity; and the MEMS cavity is encapsulated by dielectric layers.

6 . The vertically stacked structure of claim 5 , wherein:
the MEMS circuitry comprises a conductive layer operably connected to the MEMS RF switch; and the MEMS die comprises a redistribution layer operably connected between the conductive layer and the second electrical connector.

7 . The vertically stacked structure of claim 1 , wherein:
the controller circuitry comprises:
a conductive layer in a dielectric layer; and
an active device operably connected to the conductive layer; and
the controller die comprises a redistribution layer operably connected between the conductive layer and the first electrical connector.

8 . The vertically stacked structure of claim 1 , wherein:
the MEMS circuitry comprises a conductive layer in a dielectric layer; and the MEMS die comprises:
a redistribution layer operably connected between the conductive layer and a third electrical connector, the third electrical connector operable to receive a power signal; and
a through silicon via operably connecting the conductive layer to the first electrical connector.

9 . The vertically stacked structure of claim 1 , further comprising encapsulation material in a space between the MEMS die and the controller die.

10 . The vertically stacked structure of claim 1 , wherein:
the second substrate comprises one of a high resistivity silicon substrate or a first dielectric substrate; and the first substrate comprises one of a low resistivity silicon substrate, a high resistivity substrate, or a second dielectric substrate.

11 . The vertically stacked structure of claim 1 , wherein the second substrate comprises one or more dielectric layers with the MEMS circuitry disposed in and over the one or more dielectric layers.

12 . A vertically stacked structure, comprising:
a microelectromechanical (MEMS) die; a controller die, wherein a backside surface of the MEMS die is operably connected to a frontside surface of the controller die through a first electrical connector, wherein:
the controller die comprises a first substrate and controller circuitry, the controller circuitry operably connected to the first electrical connector to enable the controller circuitry to transmit control signal to the first electrical connector;
the MEMS die comprises a second substrate and a MEMS radio frequency (RF) switch, the MEMS RF switch operably connected to the first electrical connector to enable the MEMS RF switch to receive the control signal;
an air pocket region resides in a space between the backside surface of the MEMS die and the frontside surface of the controller die; and a second electrical connector is operably connected to the MEMS RF switch, the second electrical connector operable to transmit an RF signal from the MEMS RF switch and out of the vertically stacked structure, wherein the RF signal remains at a frontside surface of the MEMS die.

13 . The vertically stacked structure of claim 12 , further comprising:
a dam structure surrounding the space, the dam structure forming a closed region that creates the air pocket region; and an encapsulation material surrounding the space.

14 . The vertically stacked structure of claim 13 , wherein the dam structure is formed with a polymer material.

15 . The vertically stacked structure of claim 12 ,
the second substrate comprises one of a high resistivity silicon substrate or a first dielectric substrate; and the first substrate comprises one of a low resistivity silicon substrate, a high resistivity substrate, or a second dielectric substrate.

16 . The vertically stacked structure of claim 12 , wherein:
the second substrate comprises one or more dielectric layers; and the MEMS RF switch is disposed in a MEMS cavity that is encapsulated by at least one dielectric layer in the one or more dielectric layers.

17 . The vertically stacked structure of claim 12 , wherein:
the MEMS die comprises a redistribution layer operably connected between a conductive layer and the second electrical connector; and the MEMS RF switch is operably connected to the conductive layer.

18 . The vertically stacked structure of claim 12 , wherein:
the controller circuitry comprises:
a conductive layer in a dielectric layer; and
an active device operably connected to the conductive layer; and
the controller die comprises a redistribution layer operably connected between the conductive layer and the first electrical connector.

19 . The vertically stacked structure of claim 12 , wherein a thickness of the vertically stacked structure is less than four hundred and sixty micrometers.

20 . A method, comprising:
forming a dam structure over a backside surface of a microelectromechanical (MEMS) die; physically and operably connecting the backside surface of the MEMS die to a frontside surface of a controller die using a first electrical connector, wherein:
the controller die comprises a first substrate and controller circuitry, the controller circuitry operably connected to the first electrical connector to enable the first electrical connector to transmit a control signal to the MEMS die;
the MEMS die comprises a second substrate and a MEMS radio frequency (RF) switch, the MEMS RF switch operably connected to the first electrical connector to enable the MEMS RF switch to receive the control signal from the first electrical connector; and
the dam structure surrounds a space between the frontside surface of the controller die and the backside surface o

Assignees

• Qorvo Us Inc

Inventors

• Van Kampen Robertus Petrus
• Gaddi Roberto
• Castillou Paul
• Barron Lance
• Costa Julio C
• Hammond Jonathan Hale
• Renault Mickael

Classifications

• B81C2203/0792

  Forming interconnections between the electronic processing unit and the micromechanical structure · CPC title

• B81C1/00301

  Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias · CPC title

• B81C1/0023

  Packaging together an electronic processing unit die and a micromechanical structure die (MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261) · CPC title

• B81B2207/096

  through the substrate · CPC title

• B81B2207/07

  Interconnects · CPC title