Area sensor and display apparatus provided with an area sensor
US-2015380472-A1 · Dec 31, 2015 · US
US2024188350A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2024188350-A1 |
| Application number | US-202117790193-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 31, 2021 |
| Priority date | May 31, 2021 |
| Publication date | Jun 6, 2024 |
| Grant date | — |
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A light-emitting substrate includes a base substrate, an auxiliary electrode line, at least one light-emitting device, and at least one light-detecting device(s). The auxiliary electrode line is disposed on the base substrate. The at least one light-emitting device is disposed above the base substrate, and a light-emitting device includes a first electrode, a light-emitting functional layer and a second electrode that are sequentially stacked in a direction moving away from the base substrate. The at least one light-detecting device is disposed above the base substrate, and a light-detecting device includes a third electrode and a fourth electrode. The auxiliary electrode line is coupled to the fourth electrode and the second electrode.
Opening claim text (preview).
1 . A light-emitting substrate, comprising: a base substrate; an auxiliary electrode line disposed on the base substrate; at least one light-emitting devices disposed above the base substrate, a light-emitting device including a first electrode, a light-emitting functional layer and a second electrode that are sequentially stacked in a direction moving away from the base substrate; and at least one light-detecting device disposed above the base substrate, a light-detecting device including a third electrode and a fourth electrode; wherein the auxiliary electrode line is coupled to the fourth electrode and the second electrode. 2 . The light-emitting substrate according to claim 1 , wherein the fourth electrode of the light-detecting device is disposed on a side of the second electrode of the light-emitting device proximate to the base substrate, and the auxiliary electrode line is disposed on a side of the fourth electrode of the light-detecting device proximate to the base substrate; the light-emitting substrate further comprises a first connection portion, wherein the first connection portion is disposed on a side of the auxiliary electrode line away from the base substrate and a side of the second electrode proximate to the base substrate, and the first connection portion is coupled to the second electrode, the fourth electrode, and the auxiliary electrode line. 3 . The light-emitting substrate according to claim 2 , further comprising a first insulating layer disposed on a side of the first connection portion away from the base substrate and a side of the second electrode of the light-emitting device proximate to the base substrate; wherein the first insulating layer includes a first opening, and the first opening exposes at least a portion of the first connection portion; the second electrode of the light-emitting device extends into the first opening, and is in contact with the first connection portion in the first opening. 4 . The light-emitting substrate according to claim 3 , wherein the first connection portion includes a first connection pattern, a second connection pattern and a third connection pattern that are sequentially stacked in the direction moving away from the base substrate, an orthogonal projection of the second connection pattern on the base substrate is within an orthogonal projection of the third connection pattern on the base substrate; and the first opening of the first insulating layer exposes at least a portion of the first connection pattern, at least a portion of the second connection pattern and at least a portion of the third connection pattern; the light-emitting functional layer of the light-emitting device extends into the first opening, and a portion of the light-emitting functional layer located in the first opening is discontinuous; a portion of the second electrode located in the first opening is in contact with at least one of the first connection pattern, the second connection pattern and the third connection pattern. 5 . The light-emitting substrate according to claim 4 , wherein the orthogonal projection of the second connection pattern on the base substrate is within an orthogonal projection of the first connection pattern on the base substrate; and the portion of the second electrode located in the first opening is at least in contact with the first connection pattern; and/or the first connection pattern of the first portion is in contact with the fourth electrode. 6 . (canceled) 7 . The light-emitting substrate according to claim 3 , wherein the first insulating layer further includes a second opening, and a portion of the light-emitting functional layer of the light-emitting device located in the second opening is in contact with the first electrode of the light-emitting device. 8 . The light-emitting substrate according to claim 2 , further comprising a second connection portion disposed on a side of the first connection portion proximate to the base substrate and the side of the auxiliary electrode line away from the base substrate; wherein the second connection portion is in contact with the first connection portion and the auxiliary electrode line. 9 . The light-emitting substrate according to claim 8 , wherein the second connection portion and the third electrode of the light-detecting device are disposed in a same layer; and/or the light-emitting substrate further comprising a second insulating layer and a third insulating layer that are sequentially stacked above the base substrate in the direction moving away from the base substrate, and located on the side of the first connection portion proximate to the base substrate and a side of the second connection portion away from the base substrate; wherein the second insulating layer has a third opening, the third insulating layer has a fourth opening; an orthogonal projection of an upper edge of the third opening on the base substrate is within an orthogonal projection of a lower edge of the fourth opening on the base substrate, and overlaps with an orthogonal projection of the second connection portion on the base substrate; the first connection portion is in contact with the second connection portion through the third opening and the fourth opening; and the upper edge of the third opening is an edge of the third opening away from the base substrate, and the lower edge of the fourth opening is an edge of the fourth opening proximate to the base substrate. 10 . (canceled) 11 . The light-emitting substrate according to claim 2 , further comprising a second insulating layer and a third insulating layer that are sequentially stacked above the base substrate in the direction moving away from the base substrate, and located on a side of the first connection portion proximate to the base substrate and a side of the fourth electrode away from the base substrate; wherein the second insulating layer has a fifth opening, the third insulating layer has a sixth opening; an orthogonal projection of an upper edge of the fifth opening on the base substrate is within an orthogonal projection of a lower edge of the sixth opening on the base substrate, and overlaps with an orthogonal projection of the fourth electrode on the base substrate; the first connection portion is in contact with the fourth electrode through the fifth opening and the sixth opening; and the upper edge of the fifth opening is an edge of the fifth opening away from the base substrate, and the lower edge of the sixth opening is an edge of the sixth opening proximate to the base substrate. 12 . The light-emitting substrate according claim 1 , further comprising: a plurality of transistors including at least one first transistor coupled to the light-emitting device, and a second transistor coupled to the light-detecting device; wherein the plurality of transistors are disposed on the base substrate, each transistor includes an active layer located on a side of the light-detecting device proximate to the base substrate; and the light-detecting device further includes a semiconductor pattern, an orthogonal projection of the semiconductor pattern on the base substrate is non-overlap with an orthogonal projection of each active layer of the plurality of transistors on the base substrate. 13 . The light-emitting substrate according to claim 12 , wherein an area of the orthogonal projection of the semiconductor pattern of the light-detecting device on the base substrate is larger than an area of an orthogonal projection of an active layer of the second transistor on the base substrate; and/or the at least one first transistor includes a driving transistor, a width-to-lengt
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