Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures

Patent metadata

Field	Value
Publication number	US-2024186138-A1
Application number	US-202418440452-A
Country	US
Kind code	A1
Filing date	Feb 13, 2024
Priority date	May 8, 2018
Publication date	Jun 6, 2024
Grant date	—

Abstract

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

First claim

What is claimed is:

1 . A method for depositing an oxide film on a substrate by a cyclical deposition process comprising a first sub-cycle and a second sub-cycle, the method comprising:
depositing a metal oxide film on the substrate utilizing at least one deposition cycle of the first sub-cycle of the cyclical deposition process, wherein the at least one deposition cycle of the first sub-cycle comprises: contacting the substrate with a metal vapor phase precursor comprising at least one of: triethylaluminum (TEA), trimethylaluminum (TMA), or dimethylaluminum hydride (DMAH); and contacting the substrate with an oxygen precursor comprising at least one of water (H 2 O), hydrogen peroxide (H 2 O 2 ), nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), and an organic alcohol; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of the second sub-cycle of the cyclical deposition process, wherein an oxide film is formed using the step of depositing the metal oxide film and the step of depositing the silicon oxide film directly on the metal oxide film.

2 . The method of claim 1 , wherein the oxygen precursor comprises at least one of nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), and the organic alcohol.

3 . The method of claim 1 , wherein the oxide film goes through a post deposition thermal process wherein the oxide film is heated to a temperature of less than 900° C.

4 . The method of claim 1 , wherein the metal oxide film is deposited utilizing only one deposition cycle of the first sub-cycle and wherein the silicon oxide film is deposited using more than one deposition cycle.

5 . The method of claim 1 , wherein the metal oxide film comprises less than a single monolayer of the metal oxide.

6 . The method of claim 1 , wherein the metal oxide film has a thickness of less than 2 Angstroms.

7 . The method of claim 1 , wherein the at least one deposition cycle of the second sub-cycle comprises contacting the substrate with a silicon vapor phase precursor, wherein the silicon vapor phase precursor comprises at least one of: silanediamine N,N,N,N-tetraethyl (C 8 H 22 N 2 Si), BTBAS (bis(tertiarybutylamino)silane), BDEAS (bis(diethylamino)silane), TDMAS (tris(dimethylamino)silane), hexakis(ethylamino)disilane (Si 2 (NHC 2 H 5 ) 6 ), silicon tetraiodide (SiI 4 ), and pentachlorodisilane(PCDS).

8 . The method of claim 7 , wherein the silicon vapor phase precursor comprises pentachlorodisilane(PCDS).

9 . The method of claim 7 , wherein a growth rate of the silicon oxide film decreases with each successive deposition cycle of the second sub-cycle.

10 . The method of claim 1 , further comprising heating the substrate to a substrate temperature of less than 500° C.

11 . A method for depositing an oxide film on a substrate by a cyclical deposition process comprising a first sub-cycle and a second sub-cycle, the method comprising:
depositing a metal oxide film on the substrate utilizing at least one deposition cycle of the first sub-cycle of the cyclical deposition process, wherein the metal oxide film comprises at least one of: an aluminum oxide, a hafnium oxide, a magnesium oxide, a strontium oxide, an yttrium oxide, a lanthanum oxide, an erbium oxide, a zirconium oxide, a cerium oxide, an ytterbium oxide, a scandium oxide, or a tantalum oxide, wherein the at least one deposition cycle of the first sub-cycle comprises: contacting the substrate with a metal vapor phase precursor; and contacting the substrate with an oxygen precursor comprising at least one of water (H 2 O), hydrogen peroxide (H 2 O 2 ), nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), and an organic alcohol; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of the second sub-cycle of the cyclical deposition process, wherein an oxide film is formed using the step of depositing the metal oxide film and the step of depositing the silicon oxide film directly on the metal oxide film.

12 . The method of claim 11 , wherein the metal vapor phase precursor comprises a metal halide.

13 . The method of claim 11 , wherein the metal oxide film has a thickness of less than 2 Angstroms.

14 . The method of claim 11 , wherein the at least one deposition cycle of the second sub-cycle comprises:
contacting the substrate with a silicon vapor phase precursor; and contacting the substrate with a hydrogen peroxide (H 2 O 2 ) vapor precursor.

15 . The method of claim 11 , wherein the oxygen precursor comprises at least one of nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), and the organic alcohol.

16 . A precursor source vessel comprising a precursor source chamber and a precursor for forming a silicon dioxide contained within, wherein the precursor for forming a silicon dioxide comprises silanediamine N,N,N′,N-tetraethyl (C 8 H 22 N 2 Si), bis(tertiarybutylamino)silane, bis(diethylamino)silane, tris(dimethylamino)silane, silicon tetraiodide, or hexakis(ethylamino)disilane (Si 2 (NHC 2 H 5 ) 6 ).

17 . The precursor source vessel of claim 16 , further comprising a carrier gas contained within the precursor source chamber.

18 . The precursor source vessel of claim 16 , further comprising an inert gas contained within the precursor source chamber.

19 . The precursor source vessel of claim 16 , wherein the precursor for forming a silicon dioxide comprises silanediamine N,N,N′,N-tetraethyl (C 8 H 22 N 2 Si) or hexakis(ethylamino)disilane (Si 2 (NHC 2 H 5 ) 6 ).

20 . The precursor source vessel of claim 16 , further comprising a conduit extending from the precursor source chamber.

Assignees

• Asm Ip Holding Bv

Inventors

• Tang Fu
• Longrie Delphine
• Hsu Peng-Fu

Classifications

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title