Memory device and method of operating the same

Patent metadata

Field	Value
Publication number	US-2024177766-A1
Application number	US-202318319240-A
Country	US
Kind code	A1
Filing date	May 17, 2023
Priority date	Nov 24, 2022
Publication date	May 30, 2024
Grant date	—

Abstract

A memory device, and a method of operating the same, includes checking a first elapsed time between an end time of a program operation performed on a first page and a selection time when a second page is selected after the end time, comparing the first elapsed time with a reference time interval, and performing a dummy program operation on the second page when the first elapsed time is equal to or longer than the reference time interval.

First claim

What is claimed is:

1 . A method of operating a memory device, the method comprising:
checking a first elapsed time between an end time of a program operation performed on a first page and a selection time when a second page is selected after the end time; comparing the first elapsed time with a reference time interval; and performing a dummy program operation on the second page when the first elapsed time is equal to or longer than the reference time interval.

2 . The method of claim 1 , wherein checking the first elapsed time comprises:
checking the end time of the program operation performed on the first page; checking the selection time when the second page is selected; and determining as the first elapsed time the time interval between the end time of the program operation performed on the first page and the selection time when the second page is selected.

3 . The method of claim 1 , wherein dummy data is stored in the second page by the dummy program operation.

4 . The method of claim 1 , wherein a normal program operation is performed on the second page when the first elapsed time is shorter than the reference time.

5 . The method of claim 4 , wherein normal data is stored in the second page by the normal program operation.

6 . The method of claim 1 , further comprising after performing the dummy program operation on the second page:
checking a second elapsed time between an end time of the dummy program operation performed in the second page and a selection time when a third page is selected after the end time of the dummy program operation; comparing the second elapsed time with the reference time interval; performing a dummy program operation on the third page when the second elapsed time is equal to or longer than the reference time interval; and performing a normal program operation on the third page when the second elapsed time is shorter than the reference time interval.

7 . A method of operating a memory device, the method comprising:
checking a first elapsed time between an end time of a program operation performed on a first page and a selection time when a second page is selected after the end time; comparing the first elapsed time with a reference time interval; programming dummy data in the second page when the first elapsed time is equal to or longer than the reference time interval; and programming normal data in the second page when the first elapsed time is shorter than the reference time interval.

8 . The method of claim 7 , wherein checking the first elapsed time comprises:
checking the end time of the program operation performed on the first page; checking the selection time when the second page is selected; and determining as the first elapsed time the time interval between the end time of the program operation performed on the first page and the selection time when the second page is selected.

9 . The method of claim 7 , further comprising after programming the dummy data or the normal data in the second page:
checking a second elapsed time between a time when the dummy data or normal data is finished being programmed in the second page and a time when a third page is selected; comparing the second elapsed time with the reference time interval; programming the dummy data in the third page when the second elapsed time is equal to or longer than the reference time interval; and programming the normal data in the third page when the second elapsed time is shorter than the reference time interval.

10 . A method of operating a memory device, the method comprising:
performing a first normal program operation of programming first normal data in a first page; checking a first elapsed time between an end time of the first normal program operation performed on the first page and a first selection time when a second page is selected; comparing the first elapsed time with a reference time interval; programming first dummy data in the second page when the first elapsed time is equal to or longer than the reference time interval; and programming second normal data in the second page when the first elapsed time is shorter than the reference time interval.

11 . The method of claim 10 , wherein the second normal data is different from the first normal data.

12 . The method of claim 10 , wherein the second normal data is successive data from the first normal data.

13 . The method of claim 10 , further comprising after programming the first dummy data or the second normal data in the second page:
checking a second elapsed time between a time when the first dummy data or the second normal data is finished being programmed in the second page and a time when a third page is selected; comparing the second elapsed time with the reference time interval; programming second dummy data in the third page when the second elapsed time is equal to or longer than the reference time interval; and programming third normal data in the third page when the second elapsed time is shorter than the reference time interval.

14 . The method of claim 13 , wherein the second dummy data is the same as the first dummy data.

15 . The method of claim 13 , wherein the second dummy data is different from the first dummy data.

16 . The method of claim 13 , wherein the third normal data is different from the first and second normal data.

Assignees

• Sk Hynix Inc

Inventors

• Lee Hee Youl

Classifications

• G11C16/0483

  comprising cells having several storage transistors connected in series · CPC title

• G06F3/0679

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

• G06F3/0658

  Controller construction arrangements · CPC title

• G11C11/4096 Primary

  Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches · CPC title

• G11C11/4099

  Dummy cell treatment; Reference voltage generators · CPC title