Stabilized silica colloid
US-10087082-B2 · Oct 2, 2018 · US
Low dielectric silica powder, resin composition containing the silica powder, and method for manufacturing low dielectric silica powder
US2024174863A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2024174863-A1 |
| Application number | US-202418432451-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 5, 2024 |
| Priority date | Jun 2, 2020 |
| Publication date | May 30, 2024 |
| Grant date | — |
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Abstract
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A method for manufacturing a low dielectric silica powder incudes heat-treating a silica powder at a temperature of 500° C. to 1500° C. to achieve 0.0005 or less of a dielectric loss tangent of the silica powder at 10 GHz, and etching a surface of the heat-treated silica powder with an etching solution. A silica powder with an extremely small dielectric loss tangent, a resin composition containing the same, and a method for manufacturing a silica powder with a low dielectric loss tangent and strong adhesion at the interface to resin are achieved.
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1 . A method for manufacturing a low dielectric silica powder, comprising: heat-treating a silica powder at a temperature of 500° C. to 1500° C. to achieve 0.0005 or less of a dielectric loss tangent of the silica powder at 10 GHZ; and etching a surface of the heat-treated silica powder with an etching solution. 2 . The method for manufacturing a low dielectric silica powder according to claim 1 , wherein the heat treatment is performed for 30 minutes to 72 hours. 3 . The method for manufacturing a low dielectric silica powder according to claim 1 , wherein an aqueous solution is used as the etching solution, the aqueous solution selected from an aqueous hydrofluoric acid solution, an aqueous ammonium fluoride solution, an aqueous sodium hydroxide solution, an aqueous potassium hydroxide solution, an aqueous sodium carbonate solution, ammonia water, and alkaline electrolyzed water. 4 . The method for manufacturing a low dielectric silica powder according to claim 2 , wherein an aqueous solution is used as the etching solution, the aqueous solution selected from an aqueous hydrofluoric acid solution, an aqueous ammonium fluoride solution, an aqueous sodium hydroxide solution, an aqueous potassium hydroxide solution, an aqueous sodium carbonate solution, ammonia water, and alkaline electrolyzed water. 5 . The method for manufacturing a low dielectric silica powder according to claim 1 , wherein a basic aqueous solution with a pH of 11 or higher is used as the etching solution. 6 . The method for manufacturing a low dielectric silica powder according to claim 2 , wherein a basic aqueous solution with a pH of 11 or higher is used as the etching solution. 7 . The method for manufacturing a low dielectric silica powder according to claim 3 , wherein a basic aqueous solution with a pH of 11 or higher is used as the etching solution. 8 . The method for manufacturing a low dielectric silica powder according to claim 4 , wherein a basic aqueous solution with a pH of 11 or higher is used as the etching solution. 9 . The method for manufacturing a low dielectric silica powder according to claim 5 , wherein alkaline electrolyzed water with a pH of 12 or higher is used as the basic aqueous solution. 10 . The method for manufacturing a low dielectric silica powder according to claim 1 , further comprising treating the etched surface of the silica powder with a coupling agent.
Assignees
Inventors
Classifications
- C09C1/3045Primary
Treatment with inorganic compounds · CPC title
- C01B33/18Primary
Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof (preparation of aerogels by dehydrating gels C01B33/158; treatment to enhance the pigmenting or filling properties C09C) · CPC title
Silica · CPC title
obtained by SEM · CPC title
Micrometer sized, i.e. from 1-100 micrometer · CPC title
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- What does patent US2024174863A1 cover?
- A method for manufacturing a low dielectric silica powder incudes heat-treating a silica powder at a temperature of 500° C. to 1500° C. to achieve 0.0005 or less of a dielectric loss tangent of the silica powder at 10 GHz, and etching a surface of the heat-treated silica powder with an etching solution. A silica powder with an extremely small dielectric loss tangent, a resin composition contain…
- Who is the assignee on this patent?
- Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification C09C1/3045. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu May 30 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).