Light-emitting device and light-emitting apparatus

Patent metadata

Field	Value
Publication number	US-2024162372-A1
Application number	US-202318505845-A
Country	US
Kind code	A1
Filing date	Nov 9, 2023
Priority date	Nov 14, 2022
Publication date	May 16, 2024
Grant date	—

Abstract

A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes well layers and barrier layers that are alternately stacked. The active layer has an upper surface that is adjacent to the second semiconductor layer, and a lower surface that is opposite to the upper surface. The first semiconductor layer is doped with an n-type dopant, which has a first concentration of 5E17/cm 3 at a first point in the first semiconductor layer. The first point of the first semiconductor layer and the lower surface of the active layer have a first distance therebetween. The first distance ranges from 150 nm to 500 nm.

First claim

What is claimed is:

1 . A light-emitting device, comprising:
a semiconductor epitaxial structure that has a first surface and a second surface opposite to said first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in such order in a direction from said first surface to said second surface, said active layer including well layers and barrier layers that are alternately stacked, said active layer having an upper surface that is adjacent to said second semiconductor layer and a lower surface that is opposite to said upper surface, wherein said first semiconductor layer is doped with an n-type dopant, said n-type dopant having a first concentration of 5E17/cm 3 at a first point in said first semiconductor layer, said first point of said first semiconductor layer and said lower surface of said active layer having a first distance therebetween, said first distance ranging from 150 nm to 500 nm.

2 . The light-emitting device as claimed in claim 1 , wherein said n-type dopant contains Si, Ge, Sn, Te, or combinations thereof.

3 . The light-emitting device as claimed in claim 1 , wherein said n-type dopant contains Te and said first distance ranges from 200 nm to 500 nm.

4 . The light-emitting device as claimed in claim 3 , wherein said first semiconductor layer includes a first cladding layer, said first cladding layer including a first sublayer and a second sublayer, said first sublayer having a doping concentration no smaller than 8E17/cm 3 , said second sublayer having a concentration that gradually decreases in the direction from said first surface of said semiconductor epitaxial structure to said second surface of said semiconductor epitaxial structure.

5 . The light-emitting device as claimed in claim 4 , wherein said first sublayer has a thickness that is one-third to two-thirds of a thickness of said first cladding layer.

6 . The light-emitting device as claimed in claim 1 , wherein said n-type dopant contains Si and said first distance ranges from 150 nm to 300 nm.

7 . The light-emitting device as claimed in claim 6 , further comprising a first cladding layer, said first cladding layer having a doping concentration no smaller than 5E17/cm 3 .

8 . The light-emitting device as claimed in claim 7 , wherein said first cladding layer is made of AlGaInP.

9 . The light-emitting device as claimed in claim 7 , further comprising a first spacing layer disposed between said first cladding layer and said active layer, said first spacing layer being made of AlGaInP.

10 . The light-emitting device as claimed in claim 9 , wherein said first spacing layer has a single layered structure or a multilayered structure.

11 . The light-emitting device as claimed in claim 10 , wherein said first spacing layer has the multilayered structure, said first spacing layer having an aluminum content that first decreases and then remains constant in the direction from said first surface of said semiconductor epitaxial structure to said second surface of said semiconductor epitaxial structure.

12 . The light-emitting device as claimed in claim 1 , wherein said second semiconductor layer is doped with a p-type dopant, said p-type dopant having a second concentration of 1E17/cm 3 at a second point in said second semiconductor layer, said second point of said second semiconductor layer and said upper surface of said active layer having a second distance therebetween, said second distance ranging from 40 nm to 400 nm.

13 . The light-emitting device as claimed in claim 1 , wherein said second semiconductor layer includes a second cladding layer and a second spacing layer, said second spacing layer being disposed between said active layer and said second cladding layer.

14 . The light-emitting device as claimed in claim 13 , wherein said second spacing layer is made of AlGaInP and has a doping concentration no greater than 1E17/cm 3 .

15 . The light-emitting device as claimed in claim 13 , wherein said second spacing layer has a thickness no greater than 400 nm.

16 . The light-emitting device as claimed in claim 12 , wherein said p-type dopant contains Mg, Zn, Ca, Sr, Ba, or combinations thereof.

17 . The light-emitting device as claimed in claim 1 , wherein each of said well layers and a corresponding one of said barrier layers that is adjacent to said each of said well layers constitute a layer unit, a number of layer unit ranging from 2 to 100.

18 . The light-emitting device as claimed in claim 1 , wherein each of said well layers has a thickness ranging from 2 nm to 25 nm, and each of said barrier layers has a thickness ranging from 2 nm to 25 nm.

19 . The light-emitting device as claimed in claim 1 , wherein said active layer emits light having a wavelength ranging from 550 nm to 950 nm.

20 . A light-emitting apparatus comprising the light-emitting device as claimed in claim 1 .

Assignees

• Tianjin Sanan Optoelectronics Co Ltd

Inventors

• Li Weihuan
• Chen Jinghua
• Kuo Huan-Shao
• Peng Yu-Ren
• Chen Dongpo
• Chang Chia-Hung

Classifications

• H10H20/032

  of electrodes · CPC title

• H10H20/835

  Reflective materials · CPC title

• H10H20/824 Primary

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title