Multilayer electronic component

Patent metadata

Field	Value
Publication number	US-2024161978-A1
Application number	US-202318127226-A
Country	US
Kind code	A1
Filing date	Mar 28, 2023
Priority date	Nov 15, 2022
Publication date	May 16, 2024
Grant date	—

Abstract

A multilayer electronic component including: a body including a dielectric layer and internal electrodes; and external electrodes disposed outside the body and connected to the internal electrodes, wherein 1.5≤Hfs/Hfc≤5.0 when the internal electrode includes hafnium (Hf), Hfc indicates an average Hf content (at %) in a center of the internal electrode, and Hfs indicates an average Hf content (at %) in the internal electrode, measured from the center of the internal electrode to an interface thereof in contact with the dielectric layer.

First claim

What is claimed is:

1 . A multilayer electronic component comprising:
a body including a dielectric layer and internal electrodes including hafnium (Hf); and external electrodes disposed outside the body and connected to the internal electrodes, wherein 1.5≤Hfs/Hfc≤5.0, Hfc indicates an average Hf content (at %) in a center of at least one of the internal electrodes, and Hfs indicates an average Hf content (at %) in the at least one of the internal electrodes measured from the center of the at least one of the internal electrodes to an interface between the at least one of the internal electrodes and the dielectric layer.

2 . The component of claim 1 , wherein the average Hf content (at %) included in the at least one of the internal electrodes increases from the center of the at least one of the internal electrodes toward the interface.

3 . The component of claim 1 , wherein 1.5≤Hfs1/Hfc≤5.0, Hfs1 indicates an average Hf content (at %) in a region within 100 nm from the interface toward the center of the internal electrode.

4 . The component of claim 1 , wherein the average Hf content included in the at least one of the internal electrodes is 0.01 at % or more and 20.0 at % or less.

5 . The component of claim 4 , wherein the average Hf content included in the at least one of the internal electrodes is 5.0 at % or more and 20.0 at % or less.

6 . The component of claim 5 , wherein Hf is present as hafnium oxide.

7 . The component of claim 6 , wherein an area of hafnium oxide included in the at least one of the internal electrodes is 0.001% or more and 1.0% or less relative to that of the at least one of the internal electrodes.

8 . The component of claim 1 , wherein an average Hf content (wt %) included in the at least one of the internal electrodes is 0.025 wt % or more and 50.0 wt % or less.

9 . The component of claim 1 , wherein the at least one of the internal electrodes has an average thickness of 0.6 μm or less.

10 . The component of claim 9 , wherein the dielectric layer has an average thickness of 0.6 μm or less.

11 . The component of claim 1 , wherein the body includes first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction,
an active part forming capacitance by including the internal electrodes alternately disposed in the first direction while having the dielectric layer interposed therebetween, and a cover part disposed on each of two end surfaces of the active part opposing each other in the first direction.

12 . The component of claim 11 , wherein the body further includes a margin portion disposed on each of two end surfaces of the body opposing each other in the third direction.

13 . A multilayer electronic component comprising:
a body including a dielectric layer and internal electrodes including hafnium oxide; and external electrodes disposed outside the body and connected to the internal electrodes.

14 . The component of claim 13 , wherein 1.5≤Hfs/Hfc≤5.0, Hfc indicates an average Hf content (at %) in a center of at least one of the internal electrodes, and Hfs indicates an average Hf content (at %) in the at least one of the internal electrodes measured from the center of the at least one of the internal electrodes to an interface between the at least one of the internal electrodes and the dielectric layer.

15 . The component of claim 14 , wherein 1.5≤Hfs1/Hfc≤5.0, Hfs1 indicates an average Hf content (at %) in a region within 100 nm from the interface toward the center of the internal electrode.

16 . The component of claim 13 , wherein an average Hf content included in the at least one of the internal electrodes is 0.01 at % or more and 20.0 at % or less.

17 . The component of claim 13 , wherein an area of the hafnium oxide included in the at least one of the internal electrodes is 0.001% or more and 1.0% or less relative to that of the at least one of the internal electrodes.

Assignees

• Samsung Electro Mech

Inventors

• Hwang Hyun Jun
• Park Jin Kyung
• Jeong sun il
• Lee Gil Yong
• Kang Su Ji
• Jeong Mun Seong
• Jang Won Seok
• Kim Jung Min

Classifications

• H01G4/1227 Primary

  based on alkaline earth titanates · CPC title

• H01G4/2325

  characterised by the material of the terminals · CPC title

• H01G4/008

  Selection of materials · CPC title

• H01G4/30 Primary

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• H01G4/012 Primary

  Form of non-self-supporting electrodes · CPC title