Substrate treatment method and substrate treatment device

Patent metadata

Field	Value
Publication number	US-2024153780-A1
Application number	US-202218550634-A
Country	US
Kind code	A1
Filing date	Jan 17, 2022
Priority date	Mar 18, 2021
Publication date	May 9, 2024
Grant date	—

Abstract

A substrate processing method processes a substrate. The substrate has a major surface including a concave-portion forming surface that forms a concave portion. A to-be-removed layer is formed in the concave portion. The substrate processing method includes an etching step of supplying an etching liquid that contains etching ions to the major surface of the substrate to etch the to-be-removed layer, a concentrating step of concentrating the etching liquid on the major surface of the substrate, a hydrophilizing step of hydrophilizing the concave-portion forming surface exposed by concentrating the etching liquid, an ion diffusing step of diffusing the etching ions into a rinsing liquid by supplying the rinsing liquid to the major surface of the substrate after the hydrophilizing step, and a rinsing liquid removing step of removing the rinsing liquid from the major surface of the substrate.

First claim

1 . A substrate processing method for processing a substrate, the substrate having a major surface including a concave-portion forming surface that forms a concave portion, the substrate having a to-be-removed layer formed in the concave portion, the substrate processing method comprising:
an etching step of supplying an etching liquid that contains etching ions to the major surface of the substrate to etch the to-be-removed layer; a concentrating step of concentrating the etching liquid on the major surface of the substrate; a hydrophilizing step of hydrophilizing the concave-portion forming surface exposed by concentrating the etching liquid; an ion diffusing step of diffusing the etching ions into a rinsing liquid by supplying the rinsing liquid to the major surface of the substrate after the hydrophilizing step; and a rinsing liquid removing step of removing the rinsing liquid from the major surface of the substrate.

2 . The substrate processing method according to claim 1 , wherein a width of the concave portion is 5 nm or less.

3 . The substrate processing method according to claim 1 , wherein the to-be-removed layer is a metal layer.

4 . The substrate processing method according to claim 1 , wherein the ion diffusing step includes a step of diffusing the etching ions into the rinsing liquid by use of an ionic concentration gradient generated by bringing the rinsing liquid and the etching liquid into contact with each other in the concave portion.

5 . The substrate processing method according to claim 1 , wherein, after the rinsing liquid removing step, the ion diffusing step and the rinsing liquid removing step are each performed repeatedly at least once.

6 . The substrate processing method according to claim 1 , wherein the hydrophilizing step includes an oxidation step of oxidizing the concave-portion forming surface.

7 . The substrate processing method according to claim 6 , wherein the oxidation step includes a liquid oxidant supplying step of supplying a liquid oxidant to the major surface of the substrate.

8 . The substrate processing method according to claim 7 , further comprising an oxidant removing step of removing the liquid oxidant supplied to the major surface of the substrate from the major surface of the substrate before the ion diffusing step.

9 . The substrate processing method according to claim 6 , wherein the oxidation step includes a dry oxidation step of performing at least either one of supply of a gaseous oxidant to the major surface of the substrate and irradiation of light to the major surface of the substrate.

10 . The substrate processing method according to claim 1 , wherein the concentrating step includes a drying step of drying the major surface of the substrate.

11 . The substrate processing method according to claim 10 , wherein the etching step includes an etching liquid supplying step of discharging the etching liquid from an etching liquid nozzle to the major surface of the substrate held by a substrate holder and supplying the etching liquid to the major surface of the substrate, and
wherein the drying step includes a rotating/evaporating step of rotating the substrate by rotating the substrate holder around a rotational axis that passes through a central portion of the major surface of the substrate and that perpendicularly intersects the major surface of the substrate to evaporate a solvent component contained in the etching liquid from the major surface of the substrate.

12 . The substrate processing method according to claim 10 , wherein the drying step includes a decompressing/evaporating step of evaporating a solvent component contained in the etching liquid from the major surface of the substrate by decompressing a space contiguous to the major surface of the substrate.

13 . A substrate processing apparatus that processes a substrate, the substrate having a major surface including a concave-portion forming surface that forms a concave portion, the substrate having a to-be-removed layer formed in the concave portion, the substrate processing apparatus comprising:
an etching-liquid nozzle that supplies an etching liquid containing etching ions and etching the to-be-removed layer to the major surface of the substrate; an etching-liquid concentrator that concentrates the etching liquid on the major surface of the substrate; a hydrophilizer that hydrophilizes the concave-portion forming surface exposed by concentrating the etching liquid; a rinsing-liquid nozzle that supplies a rinsing liquid that diffuses the etching ions into a liquid to the major surface of the substrate; and a rinsing-liquid remover that removes the rinsing liquid from the major surface of the substrate.

Assignees

• Screen Holdings Co Ltd

Inventors

• Tanaka Takayoshi

Classifications

• H10P72/0424 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• H10P14/6309

  of silicon in uncombined form, i.e. pure silicon · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title