Method for Boosting Current Compensation in Auxiliary Resonant Commutated Pole Inverter (ARCPI) with Saturable Inductor

Patent metadata

Field	Value
Publication number	US-2024146212-A1
Application number	US-202217975527-A
Country	US
Kind code	A1
Filing date	Oct 27, 2022
Priority date	Oct 27, 2022
Publication date	May 2, 2024
Grant date	—

Abstract

A method for an auxiliary device of an auxiliary resonant commutated pole inverter (ARCPI) to determine a boosting time of the ARCPI is provided. The auxiliary device includes an auxiliary switch path that uses a resonant inductor with at least one saturable inductor. The method includes: calculating, by a processor of the auxiliary device, a first boosting time in the auxiliary switch path based on a theoretical resonance inductance and a voltage that are applied to the resonant inductor; determining, by the processor, a second boosting time in the auxiliary switch path based on a look-up table; and determining, by the processor, the boosting time in the auxiliary switch path based on the first boosting time and the second boosting time. The method further includes controlling, by the processor, boosting current of the ARCPI based on the boosting time in the auxiliary switch path.

First claim

What is claimed is:

1 . A method for an auxiliary device of an auxiliary resonant commutated pole inverter (ARCPI) to determine a boosting time of the ARCPI, wherein the auxiliary device comprises an auxiliary switch path that uses a resonant inductor with at least one saturable inductor, comprising:
calculating, by a processor of the auxiliary device, a first boosting time in the auxiliary switch path based on a theoretical resonance inductance and a voltage that are applied to the resonant inductor; determining, by the processor, a second boosting time in the auxiliary switch path based on a look-up table; and determining, by the processor, the boosting time in the auxiliary switch path based on the first boosting time and the second boosting time.

2 . The method according to claim 1 , further comprising:
obtaining, by the processor, a value of boosting current of the ARCPI.

3 . The method according to claim 2 , wherein calculating, by the processor of the auxiliary device, the first boosting time in the auxiliary switch path based on the theoretical resonance inductance and the voltage that are applied to the resonant inductor is made in response to the value of the boosting current of the ARCPI being larger than a threshold.

4 . The method according to claim 3 , wherein determining, by the processor, the second boosting time in the auxiliary switch path based on the look-up table is made in response to the value of the boosting current of the ARCPI being less than the threshold.

5 . The method according to claim 4 , wherein determining, by the processor, the boosting time in the auxiliary switch path based on the first boosting time and the second boosting time comprises:
in response to the value of the boosting current of the ARCPI being larger than the threshold, the boosting time in the auxiliary switch path equaling to the first boosting time in the auxiliary switch path; and in response to the value of the boosting current of the ARCPI being less than the threshold, the boosting time in the auxiliary switch path equaling to the second boosting time in the auxiliary switch path.

6 . The method according to claim 5 , wherein, in response to the value of the boosting current of the ARCPI being larger than the threshold, the boosting time in the auxiliary switch path equaling to the first boosting time in the auxiliary switch path comprises the boosting time in the auxiliary switch path equaling to a sum of the first boosting time in the auxiliary switch path and a time at which the at least one saturable inductor reaches a saturation.

7 . The method according to claim 1 , wherein calculating, by the processor of the auxiliary device, the first boosting time in the auxiliary switch path based on the theoretical resonance inductance and the voltage that are applied to the resonant inductor is according to an equation:

Vdc
2

=

L
r

⁢

Δ
⁢
I

Δ
⁢
t

=

L
r

⁢

Iboost
Tboost

,

and wherein V dc represents the voltage, the voltage being direct current (DC) bus voltage, L r represents the resonance inductance, T boost represents the first boosting time in the auxiliary switch path, and I boost represents first boosting current corresponding to the first boosting time in the auxiliary switch path.

8 . The method according to claim 1 , wherein the look-up table comprises at least one non-linear approximation of auxiliary current in the auxiliary switch path.

9 . The method according to claim 8 , wherein the at least one non-linear approximation is based on curve fitting equations that define a relation between boost current and boost time in the auxiliary switch path.

10 . The method according to claim 1 , further comprising:
controlling, by the processor, boosting current of the ARCPI based on the boosting time in the auxiliary switch path.

11 . The method according to claim 1 , wherein the boosting time in the auxiliary switch path is corrected in each switch cycle of the auxiliary switch path based on a measured output of the auxiliary switch path.

12 . An auxiliary device of an auxiliary resonant commutated pole inverter (ARCPI) for controlling boosting current of the ARCPI, wherein the auxiliary device comprises an auxiliary switch path that uses a resonant inductor with at least one saturable inductor, wherein the auxiliary device comprises a processor, and wherein the auxiliary device is configured to:
obtain a value of the boosting current of the ARCPI; in response to the value of the boosting current of the ARCPI being larger than a threshold, calculate a first boosting time in the auxiliary switch path based on a theoretical resonance inductance and a voltage that are applied to the resonant inductor; in response to the value of the boosting current of the ARCPI being less than the threshold, determine a second boosting time in the auxiliary switch path based on a look-up table; determine a boosting time in the auxiliary switch path based on the first boosting time and the second boosting time; and control the boosting current of the ARCPI based on the boosting time in the auxiliary switch path.

13 . The device according to claim 12 , wherein determining the boosting time in the auxiliary switch path based on the first boosting time and the second boosting time comprises:
in response to the value of the boosting current of the ARCPI being larger than the threshold, the boosting time in the auxiliary switch path equaling to the first boosting time in the auxiliary switch path; and in response to the value of the boosting current of the ARCPI being less than the threshold, the boosting time in the auxiliary switch path equaling to the second boosting time in the auxiliary switch path.

14 . The device according to claim 13 , wherein, in response to the value of the boosting current of the ARCPI being larger than the threshold, the boosting time in the auxiliary switch path equaling to the first boosting time in the auxiliary switch path comprises the boosting time in the auxiliary switch path equaling to a sum of the first boosting time in the auxiliary switch path and a time at which the at least one saturable inductor reaches a saturation.

15 . The device according to claim 12 , wherein, in response to the value of the boosting current of the ARCPI being larger than the threshold, calculating the first boosting time in the auxiliary switch path based on the theoretical resonance inductance and the voltage that are applied to the resonant inductor is according to an equation:

Vdc
2

Assignees

• Abb Schweiz Ag

Inventors

• Aeloiza Eddy C
• Shi Yuxiang
• Mandic Goran
• Chen Weiqiang

Classifications

• H02M1/0025

  Arrangements for modifying reference values, feedback values or error values in the control loop of a converter · CPC title

• H02M1/088

  for the simultaneous control of series or parallel connected semiconductor devices · CPC title

• H02M7/537 Primary

  using semiconductor devices only, e.g. single switched pulse inverters · CPC title

• H02M7/539 Primary

  with automatic control of output wave form or frequency (H02M7/5375 - H02M7/5387 take precedence) · CPC title

• H02M1/0012

  Control circuits using digital or numerical techniques (in DC/DC converters H02M3/157, H02M3/33515; in DC-AC converters H02M7/53873) · CPC title